Method and composition for the removal of residual materials during substrate planarization

Abstract

A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material

What is claimed is:  
     
         1 . A composition for planarizing a substrate, comprising: 
 ions of at least one transition metal;    one or more chelating agents;    one or more surfactants;    one or more oxidizers;    one or more corrosion inhibitors; and    water.    
     
     
         2 . The composition of  claim 1 , wherein the one or more chelating agents are selected form the group of compounds having one or more amine or amide groups, amino acids, carboxylic acids having one or more acid groups, and combinations thereof.  
     
     
         3 . The composition of  claim 1 , wherein the one or more chelating agents comprise between about 0.02 vol % and about 4 vol % of the composition.  
     
     
         4 . The composition of  claim 1 , wherein the ions of at least one transition metal are derived from one or metal salts.  
     
     
         5 . The composition of  claim 4 , wherein the one or more metal salts comprise a copper salt selected from the group of copper sulfate, copper fluoborate, copper gluconate, copper sulfamate, copper sulfonate, copper pyrophosphate, copper chloride, copper cyanide, and combinations thereof.  
     
     
         6 . The composition of  claim 5 , wherein the copper salt comprises between about 0.005 wt. % and about 1.0 wt. % of the composition.  
     
     
         7 . The composition of  claim 1 , wherein the surfactant comprises one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof.  
     
     
         8 . The composition of  claim 7 , wherein the surfactant is selected from the group of sodium salts of polyacrylic acid, potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfonated amines, sulfonated amides, sulfates of alcohols, alkylanyl sulfonates, carboxylated alcohols, alkylamino propionic acids, alkyliminodipropionic acids, and combinations thereof.  
     
     
         9 . The composition of  claim 1 , wherein the surfactant comprises between about 0.001 vol % and about 10 vol % of the composition.  
     
     
         10 . The composition of  claim 1 , further comprising an agent to adjust the pH.  
     
     
         11 . The composition of  claim 10 , wherein the agent to adjust the pH is an acid selected from the group of acetic acid, phosphoric acid, oxalic acid, and combinations thereof.  
     
     
         12 . The composition of  claim 1 , wherein the composition has a pH between about 2.5 and about 11.0.  
     
     
         13 . The composition of  claim 1 , further comprising abrasive particles.  
     
     
         14 . The composition of  claim 13 , wherein the abrasive particles comprise about 35 wt. % or less of the composition.  
     
     
         15 . The composition of  claim 13 , wherein the abrasive particles comprise materials selected from the group of silica, alumina, titanium oxide, zirconium oxide, cerium oxide, and combinations thereof.  
     
     
         16 . A method for removing residual copper containing materials from a substrate surface, the method comprising planarizing the substrate surface using a composition including one or more chelating agents and ions of at least one transition metal.  
     
     
         17 . The method of  claim 16 , wherein the one or more chelating agents are selected form the group of compounds having one or more amine or amide groups, amino acids, carboxylic acids having one or more acid groups, and combinations thereof.  
     
     
         18 . The method of  claim 16 , wherein the one or more chelating agents comprise between about 0.02 vol % and about 4 vol % of the composition.  
     
     
         19 . The method of  claim 16 , wherein the ions of at least one transition metal are derived from one or metal salts.  
     
     
         20 . The method of  claim 19 , wherein the one or more metal salts comprise a copper salt selected from the group of copper sulfate, copper fluoborate, copper gluconate, copper sulfamate, copper sulfonate, copper pyrophosphate, copper chloride, copper cyanide, and combinations thereof.  
     
     
         21 . The method of  claim 20 , wherein the copper salt comprises between about 0.005 wt. % and about 1.0 wt. % of the composition.  
     
     
         22 . The method of  claim 16 , wherein the composition further comprises one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, water, and combinations thereof.  
     
     
         23 . The method of  claim 22 , wherein the anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants are selected from the group of sodium salts of polyacrylic acid, potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfonated amines, sulfonated amides, sulfates of alcohols, alkylanyl sulfonates, carboxylated alcohols, alkylamino propionic acids, alkyliminodipropionic acids, and combinations thereof.  
     
     
         24 . The method of  claim 22 , wherein the surfactant comprises between about 0.001 vol % and about 10 vol % of the composition.  
     
     
         25 . The method of  claim 22 , wherein the composition further comprises an agent to adjust the pH.  
     
     
         26 . The method of  claim 25 , wherein the agent to adjust the pH is an acid selected from the group of acetic acid, phosphoric acid, oxalic acid, and combinations thereof.  
     
     
         27 . The method of  claim 22 , wherein the composition further comprises abrasive particles.  
     
     
         28 . The method of  claim 27 , wherein the abrasive particles comprises about 35 wt. % or less of the composition.  
     
     
         29 . The method of  claim 28 , wherein the abrasive particles comprise materials selected from the group of silica, alumina, titanium oxide, zirconium oxide, cerium oxide, and combinations thereof.  
     
     
         30 . A method for processing a substrate, comprising: 
 providing a substrate to a polishing apparatus;    polishing the substrate to substantially remove copper containing material formed thereon; and    polishing the substrate with a CMP composition comprising one or more chelating agents and one or more copper salts to remove residual copper containing material.    
     
     
         31 . The method of  claim 30 , wherein the one or more chelating agents are selected form the group of compounds having one or more amine or amide groups, amino acids, carboxylic acids having one or more acid groups, and combinations thereof.  
     
     
         32 . The method of  claim 30 , wherein the one or more chelating agents comprise between about 0.02 vol % and about 4 vol % of the CMP composition.  
     
     
         33 . The method of  claim 30 , wherein the one or more copper salts are selected from the group of copper sulfate, copper fluoborate, copper gluconate, copper sulfamate, copper sulfonate, copper pyrophosphate, copper chloride, copper cyanide, and combinations thereof.  
     
     
         34 . The method of  claim 33 , wherein the copper salt comprises between about 0.005 wt. % and about 1.0 wt. % of the CMP composition.  
     
     
         35 . The method of  claim 30 , wherein the CMP composition further comprises one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, water, and combinations thereof.  
     
     
         36 . The method of  claim 35 , wherein the one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof are selected from the group of comprise sodium salts of polyacrylic acid, potassium oleate, sulfosuccinates, sulfosuccinate derivatives, sulfonated amines, sulfonated amides, sulfates of alcohols, alkylanyl sulfonates, carboxylated alcohols, alkylamino propionic acids, alkyliminodipropionic acids, and combinations thereof.  
     
     
         37 . The method of  claim 35 , wherein the one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof comprise between about 0.001 vol % and about 10 vol % of the CMP composition.  
     
     
         38 . The method of  claim 35 , wherein the CMP composition further comprises an agent to adjust the pH.  
     
     
         39 . The method of  claim 38 , wherein the agent to adjust the pH is an acid selected from the group of acetic acid, phosphoric acid, oxalic acid, and combinations thereof.  
     
     
         40 . The method of  claim 35 , wherein the CMP composition further comprises abrasive particles.  
     
     
         41 . The method of  claim 40 , wherein the abrasive particles comprises about 35 wt. % or less of the CMP composition.  
     
     
         42 . The method of  claim 40 , wherein the abrasive particles comprise about 2 wt. % or less of the CMP composition.  
     
     
         43 . The method of  claim 40 , wherein the abrasive particles comprise materials selected from the group of silica, alumina, titanium oxide, zirconium oxide, cerium oxide, and combinations thereof.  
     
     
         44 . A method for processing a substrate disposed on a polishing pad, comprising: 
 performing a first polishing process to substantially remove copper containing material from the substrate;    performing a second polishing process to remove copper containing material residue from the substrate, the second polishing process comprising: 
 delivering a CMP composition to the polishing pad;  
 mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition; and  
 removing copper containing material residue from the substrate.  
   
     
     
         45 . The method of  claim 44 , wherein the CMP composition comprises one or more anionic surfactants, Zweitter-ionic surfactants, multi-ionic surfactants, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, water, and combinations thereof.  
     
     
         46 . The method of  claim 45 , wherein the CMP composition further comprises abrasive particles.  
     
     
         47 . The method of  claim 44 , wherein the one or more chelating agents are selected form the group of compounds having one or more amine or amide groups, amino acids, carboxylic acids having one or more acid groups, and combinations thereof.  
     
     
         48 . The method of  claim 44 , wherein the one or more chelating agents comprise between about 0.02 vol % and about 4 vol % of the CMP composition.  
     
     
         49 . The method of  claim 44 , wherein the ions of at least one transition metal are derived from one or metal salts.  
     
     
         50 . The method of  claim 49 , wherein the one or more metal salts comprise a copper salt selected from the group of copper sulfate, copper fluoborate, copper gluconate, copper sulfamate, copper sulfonate, copper pyrophosphate, copper chloride, copper cyanide, and combinations thereof.  
     
     
         51 . The method of  claim 50 , wherein the copper salt comprises between about 0.005 wt. % and about 1.0 wt. % of the composition.  
     
     
         52 . The method of  claim 44 , wherein mixing the one or more chelating agents and one or more metal salts in situ with the second CMP composition occurs between about 30 seconds and about 300 seconds after the first CMP composition is delivered to the polishing pad.  
     
     
         53 . The method of  claim 44 , wherein the ions of at least one transition metal are derived from the erosion of a substrate retaining ring during the second polishing process.  
     
     
         54 . The method of  claim 44 , wherein the ions of at least one transition metal are derived from the composition reacting with a copper source disposed in a polishing pad during the second polishing process.  
     
     
         55 . A computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform: 
 (a) polishing the substrate to substantially remove copper containing material formed thereon; and    (b) polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.    
     
     
         56 . The computer readable medium of  claim 55 , wherein the instructions are arranged for polishing the substrate to substantially remove copper containing material formed thereon is conducted on a rotating or linear polishing pad mounted on a first platen.  
     
     
         57 . The computer readable medium of  claim 56 , wherein the instructions are arranged for polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material is conducted on a rotating or linear polishing pad mounted on a first platen or on a second platen.  
     
     
         58 . The computer readable medium of  claim 55 , wherein the instructions are further arranged for polishing the substrate with the CMP composition by mixing the one or more chelating agents and one or more metal salts in situ with other components of the CMP composition between about 30 seconds and about 300 seconds after the other components of the CMP composition are delivered to a polishing pad.