US2002068226A1PendingUtilityA1
Method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
Priority: Apr 6, 1999Filed: Mar 29, 2000Published: Jun 6, 2002
Est. expiryApr 6, 2019(expired)· nominal 20-yr term from priority
G03F 7/70433G03F 7/70891G03F 1/36
18
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Claims
Abstract
In a photolithographic process using a photolithographic mask having opaque mask areas and transparent mask areas, the opaque mask areas corresponding to a pattern to be transferred onto a semiconductor wafer to form on the wafer a pattern of active structures, a method for improving the performance of the photolithographic equipment and for increasing the lifetime of the optics including providing auxiliary opaque mask areas in areas of the mask not covered by active opaque mask areas, so as to reduce a transmission factor of the mask.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . In a photolithographic process using a photolithographic mask having opaque mask areas and transparent mask areas, the opaque mask areas corresponding to a pattern to be transferred onto a semiconductor wafer to form on the wafer a pattern of active structures, a method for improving the performance of the photolithographic equipment and for increasing the lifetime of the optics including providing auxiliary opaque mask areas in areas of the mask not covered by active opaque mask areas, so as to reduce a transmission factor of the mask.Join the waitlist — get patent alerts
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