Method and apparatus for dissolving a gas into a liquid for single wet wafer processing

Abstract

A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liquid reaching the output over the wafer by flowing a gas into the conduit through a venturi opening formed in the conduit. The liquid with dissolved gas is then fed through the opening and onto the wafer where it can be used to etch, clean, or rinse a wafer.

We claim:  
     
         1 . A method of processing a wafer: 
 placing a wafer on a wafer support;    flowing a liquid through a conduit having an output opening over said support;    dissolving a gas into said liquid prior to said output by flowing a gas into said conduit through a venturi opening formed in said conduit; and    flowing said liquid with said dissolved gas through said opening and onto said wafer.    
     
     
         2 . The method of  claim 1  wherein said gas is selected from the group consisting of O 3 , O 2 , H 2 , N 2 , Ar, and He.  
     
     
         3 . The method of  claim 1  wherein said liquid comprises HF.  
     
     
         4 . The method of  claim 1  wherein said liquid comprises DI water.  
     
     
         5 . The method of  claim 1  wherein said liquid comprising a cleaning solution.  
     
     
         6 . The method of  claim 1  further comprising degassing said liquid prior to flowing said liquid through said conduit.  
     
     
         7 . The method of  claim 1  wherein said gas is supplied at a lower pressure than said liquid flowing through said conduit.  
     
     
         8 . The method of  claim 7  wherein said gas is ozone (O 3 ).  
     
     
         9 . A wafer processing apparatus comprising: 
 a wafer support;    a conduit for supplying a liquid to an opening positioned over said wafer support;    a venturi in said conduit prior to said opening over said wafer support; and    a venturi opening in said conduit at said venturi for dissolving a gas into said liquid.    
     
     
         10 . The apparatus of  claim 9  wherein said wafer support is rotatable.  
     
     
         11 . The apparatus of  claim 9  wherein said wafer support is a single wafer support.