Method of separating films from bulk substrates by plasma immersion ion implantation

Abstract

A technique for fabricating substrates such as a silicon-on-insulator substrate using a plasma immersion ion implantation (“PIII”) system 10. The technique includes a method, which has a step of providing a substrate 2100. Ions are implanted 2109 into a surface of the substrate to a first desired depth to provide a first distribution of the ions using a plasma immersion ion implantation system 10. The implanted ions define a first thickness of material 2101 above the implant. Global energy is then increased of the substrate to initiate a cleaving action, where the cleaving action is sufficient to completely free the thickness of material from a remaining portion of the substrate. By way of the PIII system, the ions are introduced into the substrate in an efficient and cost effective manner.

What is claimed is:  
     
         1 . A method for fabricating substrates, said method comprising: 
 providing a substrate;    implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using a plasma immersion ion implantation system, said implanted ions defining a first thickness of material above said implant; and    increasing global energy of said substrate to initiate a cleaving action, said cleaving action being sufficient to completely free said thickness of material from a remaining portion of said substrate.    
     
     
         2 . The method of  claim 1  wherein said energy is selected from chemical, mechanical, or thermal.  
     
     
         3 . The method of  claim 2  wherein said thermal energy is provided by a furnace.  
     
     
         4 . The method of  claim 3  wherein said increased global energy causes microcavities and/or microbubbles to form at said first desired depth in said substrate.  
     
     
         5 . The method of  claim 1  wherein said implanting step is a patterned.  
     
     
         6 . The method of  claim 1  wherein said implanting step provides a second distribution of said ions at a second desired depth, said second distribution of ions defining a second thickness of material from said second desired depth to said first desired depth.  
     
     
         7 . The method of  claim 6  wherein said second desired depth is different than said first desired depth.  
     
     
         8 . The method of  claim 6  wherein said ions at said first desired depth have a different mass and/or charge state than said ions at said second desired depth.  
     
     
         9 . The method of  claim 6  wherein said step of increasing global energy also initiating a cleaving action sufficient to completely free said second thickness of material from a remaining portion of said substrate.  
     
     
         10 . The method of  claim 1  wherein said ions are derived from helium gas or its isotopes.  
     
     
         11 . The method of  claim 1  wherein said ions are derived from hydrogen gas or its isotopes.  
     
     
         12 . A method for fabricating substrates, said method comprising: 
 providing a substrate;    implanting ions into a surface of said substrate to a first desired depth to provide a first distribution of said ions using a process selected from plasma immersion ion implantation or ion shower, said implanted ions defining a first thickness of material above said implant; and    removing said first thickness of said material to free said thickness of said material from said substrate.    
     
     
         13 . The method of  claim 12  wherein said removing step is provided by increasing global energy in said substrate, said increased global energy being selected from chemical, mechanical, or thermal.  
     
     
         14 . The method of  claim 13  wherein said thermal energy is provided by a furnace.  
     
     
         15 . The method of  claim 13  wherein said increased global energy causes microcavities to form at said first desired depth in said substrate.  
     
     
         16 . The method of  claim 12  wherein said implanting step is a patterned.  
     
     
         17 . The method of  claim 12  wherein said implanting step provides a second distribution of said ions at a second desired depth, said second distribution of ions defining a second thickness of material from said second desired depth to said first desired depth.  
     
     
         18 . The method of  claim 17  wherein said second desired depth is different than said first desired depth.  
     
     
         19 . The method of  claim 17  wherein said ions at said first desired depth have a different mass and/or charge state than said ions at said second desired depth.  
     
     
         20 . The method of  claim 17  wherein said step of removing also removing said second thickness of material from said substrate.  
     
     
         21 . The method of  claim 12  wherein said ions are derived from helium gas or its isotopes.  
     
     
         22 . The method of  claim 12  wherein said ions are derived from hydrogen gas or its isotopes.  
     
     
         23 . The method of  claim 12  wherein said step of implanting ions is a multiple implant step.  
     
     
         24 . The method of  claim 12  wherein said step of implanting ions is a multiple implant step using different ions.  
     
     
         25 . The method of  claim 12  wherein said step of implanting ions is a multiple implant step using different implant doses.  
     
     
         26 . The method of  claim 12  wherein said step of implanting ions is a multiple implant step using different energies.  
     
     
         27 . The method of  claim 12  wherein said step of implanting ions is a multiple implant step using different temperatures.