Method of removing residual photoresist

Abstract

A method for removing residual color photoresist material from a substrate after photoresist development. The method washes the substrate with a high-pressure jet of de-ionized water that contains an activated interface agent. A second method of removing the residual photoresist material bombards the substrate with oxygen plasma for a brief period so that the residual photoresist material is polarized and then rinses the substrate with de-ionized water.

What is claimed is:  
     
         1 . A method for removing residual photoresist material on a transistor substrate after development of a patterned color photoresist layer, comprising the steps of: 
 aiming a high-pressure jet of de-ionized water that contains an activated interface agent at the substrate.    
     
     
         2 . The method of  claim 1 , wherein the activated interface agent includes a sulfonate.  
     
     
         3 . The method of  claim 1 , wherein the activated agent includes Tergital®.  
     
     
         4 . The method of  claim 1 , wherein the activated agent includes Teryitox®.  
     
     
         5 . A method for removing residual photoresist material on a transistor substrate after the development of a patterned color photoresist layer, comprising the steps of: 
 bombarding the substrate with oxygen plasma so that the residual photoresist material is polarized; and    removing the residual photoresist material by washing the substrate with de-ionized water.    
     
     
         6 . The method of  claim 5 , wherein the step of polarizing the residual photoresist material includes forming C—OH bonds on a surface of the residual photoresist.