US2002056880A1PendingUtilityA1

Method for fabricating interconnect of capacitor

33
Priority: Oct 5, 2000Filed: Jan 11, 2002Published: May 16, 2002
Est. expiryOct 5, 2020(expired)· nominal 20-yr term from priority
Inventors:Chewnpu JouRoger Yen
H10W 20/496H10W 20/495H10W 20/497H10D 1/692
33
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Claims

Abstract

A method of fabricating an interconnect of a capacitor. A substrate having a capacitor is provided. The capacitor comprises a bottom electrode electrically connected to the substrate, a dielectric layer and a top electrode thereon. A spin-on dielectric layer is formed on the substrate and the capacitor. The spin-on dielectric layer on the substrate is thicker than that on the top electrode. The spin-on dielectric layer is etched back until the top electrode is exposed. A patterned metal layer is formed on the spin-on dielectric layer and the top electrode with a bottom surface in directly contact with a top surface of the top electrode.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method of fabricating an interconnect of a capacitor, comprising: 
 providing a substratehaving a capacitor that includes a metal bottom electrode plate electrically connected to the substrate, an inter-metal dielectric layer on the metal bottom electrode plate and a metal top electrode plate on the inter-metal dielectric layer;    forming a spin-on dielectric layer on the substrate and the capacitor, wherein the spin-on dielectric layer on the capacitor is thicker than the spin-on dielectric layer on the substrate;    etching back the spin-on dielectric layer until a top surface of the metal top electrode plate is exposed; and    forming a patterned metal layer in contact with the top surface of the metal top electrode plate.    
     
     
         2 . The method according to  claim 1 , wherein step of forming the spin-on dielectric layer comprises forming a hydrogen silequioxane layer.  
     
     
         3 . The method according to  claim 1 , wherein the step of providing the substrate comprises providing a metal top electrode plate with a thickness of about 6000-8000 angstroms.  
     
     
         4 . The method according to  claim 1 , wherein the step of providing the substrate comprises providing an inter-metal dielectric layer with a thickness of about 400-600 angstroms.  
     
     
         5 . The method according to  claim 1 , wherein the step of providing the substrate comprises provides the metal top electrode plate with a thickness of about 500-1000 angstroms.  
     
     
         6 . The method according to  claim 1 , wherein the step of forming a spin-on dielectric layer comprises forming the spin-on dielectric layer with a thickness of about 7000-9000 angstroms.  
     
     
         7 . The method according to  claim 1 , wherein the step of forming a metal layer comprises forming the metal layer with a thickness of about 16000-20000 angstroms.  
     
     
         8 . A method of fabricating an interconnect of a capacitor and an inductor, comprising: 
 providing a substrate having a capacitor and an inductor thereon, wherein the capacitor comprises a metal bottom electrode plate electrically connected to the substrate, an inter-metal dielectric layer on the metal bottom electrode plate and a metal top electrode plate on the inter-metal dielectric layer, and the inductor is electrically connected to the substrate;    forming a spin-on dielectric layer covering the substrate, the inductor and the capacitor, wherein the spin-on dielectric layer covering the inductor and the capacitor is thinner than the spin-on dielectric layer covering the substrate;    etching back the spin-on dielectric layer until top surfaces of the inductor and the capacitor are exposed; and    forming a first patterned metal layer on the top surface of the capacitor and a second patterned metal layer on the top surface of the inductor, so that the first patterned metal layer is in direct contact with the top metal electrode plate of the capacitor and the second patterned metal layer is in direct contact with the inductor.    
     
     
         9 . The method according to  claim 8 , wherein step of forming the spin-on dielectric layer comprises forming a hydrogen silequioxane layer.  
     
     
         10 . The method according to  claim 8 , wherein the step of providing the substrate comprises providing a metal top electrode plate with a thickness of about 6000-8000 angstroms.  
     
     
         11 . The method according to  claim 8 , wherein the step of providing the substrate comprises providing an inter-metal dielectric layer with a thickness of about 400-600 angstroms.  
     
     
         12 . The method according to  claim 8 , wherein the step of providing the substrate comprises provides the metal top electrode plate with a thickness of about 500-1000 angstroms.  
     
     
         13 . The method according to  claim 8 , wherein the step of forming a spin-on dielectric layer comprises forming the spin-on dielectric layer with a thickness of about 7000-9000 angstroms.  
     
     
         14 . The method according to  claim 8 , wherein the step of forming a metal layer comprises a forming the metal layer with a thickness of about 16000-20000 angstroms.  
     
     
         15 . An interconnect of a capacitor formed on a substrate, the capacitor comprising a metal bottom electrode plate electrically connected to the substrate, an inter-metal dielectric layer on the metal bottom electrode plate and a metal top electrode plate on the inter-metal dielectric layer, the interconnect comprises: 
 a spin-on dielectric layer, covering the substrate but exposing a top surface of the metal top electrode plate; and    a metal layer, formed on the spin-on dielectric layer and in direct contact with the top surface of the metal top electrode plate.    
     
     
         16 . The interconnect according to  claim 15 , wherein the spin-on dielectric layer comprises a hydrogen silesquioxane layer.  
     
     
         17 . The interconnect according to  claim 15 , wherein the metal bottom electrode plate has a thickness of about 6000-8000 angstroms.  
     
     
         18 . The interconnect according to  claim 15 , wherein the inter-metal dielectric layer has a thickness of about 400-600 angstroms.  
     
     
         19 . The interconnect according to  claim 15 , wherein the metal top electrode plate has a thickness of about 500-1000 angstroms.  
     
     
         20 . The interconnect according to  claim 15 , wherein the metal layer has a thickness of about 16000-20000 angstroms.

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