US2002056401A1PendingUtilityA1

Precursor solutions and methods of using same

43
Priority: Oct 23, 2000Filed: May 14, 2001Published: May 16, 2002
Est. expiryOct 23, 2020(expired)· nominal 20-yr term from priority
Inventors:Martin W. RupichThomas Kodenkandath
C30B 7/005Y10S505/734C30B 29/22H10N 60/0548H10N 60/0324H10N 60/01
43
PatentIndex Score
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Claims

Abstract

Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method, comprising: 
 disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a salt of a rare earth metal, a salt of an alkaline earth metal and a carboxylate salt of a transition metal, with the proviso that the carboxylate salt of the transition metal salt is not a trifluoroacetate salt of the transition metal; and    treating the precursor film to form an intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.    
     
     
         2 . The method of  claim 1 , wherein the precursor film is treated for less than about five hours.  
     
     
         3 . The method of  claim 1 , the precursor solution further comprises a Lewis base.  
     
     
         4 . The method of  claim 3 , wherein the Lewis base comprises a nitrogen-containing compound.  
     
     
         5 . The method of  claim 4 , wherein the nitrogen-containing compound is selected from the group consisting of ammonia and amines.  
     
     
         6 . The method of  claim 1 , wherein the layer of the intermediate has a thickness of at least about one micrometer.  
     
     
         7 . The method of  claim 1 , further comprising treating the layer of the intermediate to form a layer of a rare earth metal-alkaline earth metal-transition metal oxide having a critical current density of at least about 0.5×10 6  Amperes per square centimeter.  
     
     
         8 . The method of  claim 1 , wherein defects contained within the layer of the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of a surface of the intermediate.  
     
     
         9 . The method of  claim 1 , wherein the carboxylate salt of the transition metal comprises Cu(O 2 CC 2 H 5 ) 2 .  
     
     
         10 . The method of  claim 9 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         11 . The method of  claim 10 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium carboxylates and nonhalogenated yttrium carboxylates.  
     
     
         12 . The method of  claim 1 , wherein the carboxylate salt of the transition metal comprises a nonhalogenated carboxylate salt.  
     
     
         13 . The method of  claim 12 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         14 . The method of  claim 13 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         15 . A method, comprising: 
 disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a salt of a rare earth metal, a salt of an alkaline earth metal and a carboxylate salt of copper; and    treating the precursor film to form an intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.    
     
     
         16 . The method of  claim 15 , wherein the precursor film is treated for less than about five hours.  
     
     
         17 . The method of  claim 15 , wherein the precursor solution further comprises a Lewis base.  
     
     
         18 . The method of  claim 17 , wherein the Lewis base comprises a nitrogen-containing compound.  
     
     
         19 . The method of  claim 18 , wherein the nitrogen-containing compound is selected from the group consisting of ammonia and amines.  
     
     
         20 . The method of  claim 15 , wherein the layer of the intermediate has a thickness of at least about two micrometers.  
     
     
         21 . The method of  claim 15 , wherein the layer of the intermediate has a thickness of at least about three micrometers.  
     
     
         22 . The method of  claim 15 , wherein the layer of the intermediate has a thickness of at least about four micrometers.  
     
     
         23 . The method of  claim 15 , wherein the layer of the intermediate has a thickness of at least about five micrometers.  
     
     
         24 . The method of  claim 15 , further comprising treating the layer of the intermediate to form a layer of a rare earth metal-alkaline earth metal-transition metal oxide material having a critical current density of at least about 0.5×10 6  Amperes per square centimeter.  
     
     
         25 . The method of  claim 15 , wherein defects contained within the layer of the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of a surface of the intermediate.  
     
     
         26 . The method of  claim 15 , wherein the carboxylate salt of copper comprises Cu(O 2 CC 2 H 5 ) 2 .  
     
     
         27 . The method of  claim 26 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         28 . The method of  claim 27 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         29 . The method of  claim 15 , wherein the carboxylate salt of copper comprises a nonhalogenated carboxylate salt of copper.  
     
     
         30 . The method of  claim 29 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         31 . The method of  claim 30 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         32 . A method, comprising: 
 disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a salt of a rare earth metal, a salt of an alkaline earth metal and a carboxylate salt of a transition metal; and    treating the precursor film to form a rare earth metal-alkaline earth metal-transition metal oxide intermediate.    
     
     
         33 . The method of  claim 32 , wherein the precursor film is treated for less than about five hours.  
     
     
         34 . The method of  claim 32 , wherein the precursor solution further comprises a Lewis base.  
     
     
         35 . The method of  claim 32 , wherein the Lewis base comprises a nitrogen-containing compound.  
     
     
         36 . The method of  claim 32 , wherein the nitrogen-containing compound is selected from the group consisting of ammonia and amines.  
     
     
         37 . The method of  claim 32 , wherein the superconductor material has a critical current density of at least about 1×10 6  Amperes per square centimeter.  
     
     
         38 . The method of  claim 32 , wherein the intermediate is at least about one micrometer thick.  
     
     
         39 . The method of  claim 32 , wherein the carboxylate salt of the transition metal comprises Cu(O 2 CC 2 H 5 ) 2 .  
     
     
         40 . The method of  claim 39 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         41 . The method of  claim 40 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         42 . The method of  claim 32 , wherein the carboxylate salt of the transition metal comprises a nonhalogenated carboxylate salt.  
     
     
         43 . The method of  claim 42 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         44 . The method of  claim 43 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         45 . A composition, comprising: 
 a salt of a rare earth metal;    a salt of an alkaline earth metal; and    a carboxylate salt of copper.    
     
     
         46 . The composition of  claim 45 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         47 . The composition of  claim 46 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         48 . The composition of  claim 45 , further comprising a Lewis base.  
     
     
         49 . The composition of  claim 48 , wherein the alkaline earth metal salt comprises barium trifluoroacetate.  
     
     
         50 . The composition of  claim 49 , wherein the rare earth metal salt comprises a salt selected from the group consisting of halogenated yttrium acetates and nonhalogenated yttrium acetates.  
     
     
         51 . A method, comprising: 
 disposing a precursor solution onto a surface of a layer to form a precursor film, the precursor film including a salt of a rare earth metal, a salt of an alkaline earth metal, a salt of a transition metal and a Lewis base; and    treating the precursor film to form an intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.    
     
     
         52 . The method of  claim 51 , wherein the Lewis base comprises a nitrogen-containing compound.  
     
     
         53 . The method of  claim 52 , wherein the nitrogen-containing compound is selected from the group consisting of ammonia and amines.  
     
     
         54 . The method of  claim 52 , wherein the nitrogen-containing compound comprises an amine having a formula selected from the group consisting of CH 3 CN, C 5 H 5 N and R 1 R 2 R 3 N, wherein each of R 1 R 2  and R 3  are independently selected from the group consisting of H, a straight chained alkyl group, a branched alkyl group, an aliphatic alkyl group, a non-aliphatic alkyl group and a substituted alkyl group.  
     
     
         55 . The method of  claim 51 , wherein the layer of the intermediate has a surface adjacent the surface of the first layer and the layer of the intermediate has a plurality of volume elements, and wherein defects contained within the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of the surface of the intermediate, and the intermediate is free of any defect having a maximum dimension greater than about 200 micrometers.  
     
     
         56 . The method of  claim 51 , wherein the precursor film is treated for less than about five hours.  
     
     
         57 . The method of  claim 51 , wherein the layer of the intermediate has a surface adjacent the surface of the first layer and the layer of the intermediate has a plurality of volume elements, and wherein defects contained within the intermediate comprise less than about 10 percent of any volume element of the intermediate defined by a projection of one square centimeter of the surface of the intermediate, and the intermediate is free of any defect having a maximum dimension greater than about 200 micrometers.  
     
     
         58 . The method of  claim 51 , wherein the intermediate is capable of being processed to provide a superconductor material having a critical current density of at least about 0.5×10 6  Amperes per square centimeter.  
     
     
         59 . A composition, comprising: 
 a Lewis base;    a salt of a rare earth metal;    a salt of an alkaline earth metal; and    a salt of a transition metal.    
     
     
         60 . The composition of  claim 59 , wherein the Lewis base comprises a nitrogen-containing compound.  
     
     
         61 . The composition of  claim 60 , wherein the nitrogen-containing compound is selected from the group consisting of ammonia and amines.  
     
     
         62 . The composition of  claim 60 , wherein the nitrogen-containing compound comprises an amine having a formula selected from the group consisting of CH 3 CN, C 5 H 5 N and R 1 R 2 R 3 N, wherein each of R 1 , R 2  and R 3  are independently selected from the group consisting of H, a straight chained alkyl group, a branched alkyl group, an aliphatic alkyl group, a non-aliphatic alkyl group and a substituted alkyl group.  
     
     
         63 . The composition of  claim 59 , wherein the transition metal salt has a formula selected from the group consisting of M (CXX X —CO(CH) a CO—CX X X )(CX X X —CO(CH) b CO—CX X X ), M (O 2 C—(CH 2 ) n —CXX X )(O 2 C—(CH 2 ) m —CX X X ) and M (OR) 2 , wherein M is the transition metal, a is an integer having a value of at least one and at most five, b is an integer having a value of at least one and at most five, n is an integer having a value of at least one and at most ten, m is an integer having a value of at least one and at most ten, R is a halogenated or nonhalogenated carbon containing group, and each of X, X , X , X , X , X , X , X , X , X , X , X is H, F, Cl, Br or I, with the proviso that the transition metal salt does not have the formula M (CF 3 CO 2 ) 2 .  
     
     
         64 . The composition of  claim 59 , wherein the transition metal salt comprises a carboxylate salt.  
     
     
         65 . The composition of  claim 59 , wherein the transition metal salt comprises Cu(C) 2 CC 2 H 5 ) 2 .  
     
     
         66 . The method of  claim 1 , wherein the layer of the intermediate has a surface adjacent the surface of the first layer and the layer of the intermediate has a plurality of volume elements, and wherein defects contained within the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of the surface of the intermediate, and the intermediate is free of any defect having a maximum dimension greater than about 200 micrometers.  
     
     
         67 . The method of  claim 15 , wherein the layer of the intermediate has a surface adjacent the surface of the first layer and the layer of the intermediate has a plurality of volume elements, and wherein defects contained within the intermediate comprise less than about 20 percent of any volume element of the intermediate defined by a projection of one square centimeter of the surface of the intermediate, and the intermediate is free of any defect having a maximum dimension greater than about 200 micrometers.  
     
     
         68 . The method of  claim 67 , wherein the intermediate is capable of being processed to form a superconductor material having a critical current density of at least about 0.5×10 6  Amperes per square centimeter.  
     
     
         69 . A method, comprising: 
 disposing a precursor solution onto a surface of a layer to form a precursor film; and    treating the precursor film to form a superconductor material having a critical current of at least about 200 Amperes per centimeter of width.    
     
     
         70 . The method of  claim 69 , wherein the superconductor material has a critical current of at least about 300 Amperes per centimeter of width.  
     
     
         71 . The method of  claim 69 , wherein the superconductor material has a critical current of at least about 300 Amperes per centimeter of width.  
     
     
         72 . The method of  claim 69 , wherein the precursor solution comprises a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal.  
     
     
         73 . The method of  claim 72 , wherein the rare earth metal is yttrium, the alkaline earth metal is barium, and the transition metal is copper.  
     
     
         74 . The method of  claim 69 , wherein the superconductor material comprises a rare earth metal-alkaline earth metal-transition metal oxide.  
     
     
         75 . The method of  claim 69 , wherein the superconductor material comprises YBCO.  
     
     
         76 . The method  claim 69 , wherein the method includes forming an intermediate of the superconductor material.  
     
     
         77 . The method of  claim 76 , wherein the intermediate is metal oxyfluoride intermediate.  
     
     
         78 . The method of  claim 1 , wherein the intermediate of the rare earth metal-alkaline earth metal-transition metal is further treated to form a superconductor material has a critical current of at least about 200 Amperes per centimeter width.  
     
     
         79 . The method of  claim 15 , wherein the intermediate of the rare earth metal-alkaline earth metal-transition metal is further treated to form a superconductor material has a critical current of at least about 200 Amperes per centimeter width.  
     
     
         80 . The method of  claim 32 , wherein the intermediate of the rare earth metal-alkaline earth metal-transition metal is further treated to form a superconductor material has a critical current of at least about 200 Amperes per centimeter width.  
     
     
         81 . The method of  claim 51 , wherein the intermediate of the rare earth metal-alkaline earth metal-transition metal is further treated to form a superconductor material has a critical current of at least about 200 Amperes per centimeter width.  
     
     
         82 . The method of  claim 1 , wherein the carboxylate salt of the transition metal comprises a propionate salt of the transition metal.  
     
     
         83 . The method of  claim 15 , wherein the carboxylate salt of the transition metal comprises a propionate salt of the transition metal.  
     
     
         84 . The method of  claim 32 , wherein the carboxylate salt of the transition metal comprises a propionate salt of the transition metal.  
     
     
         85 . The composition of  claim 45 , wherein the carboxylate salt of copper comprises a propionate salt of copper.  
     
     
         86 . The method of  claim 51 , wherein the salt of the transition metal comprises a carboxylate salt of the transition metal.  
     
     
         87 . The composition of  claim 59 , wherein the salt of the transition metal comprises a carboxylate salt of the transition metal.  
     
     
         88 . The composition of  claim 69 , wherein the precursor solution comprises a Lewis base.

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