Chemical vapor deposition method and related material

Abstract

A process for chemical vapor deposition includes depositing a film using a metal β-diketonate complex and an α, β-unsaturated alcohol. The metal β-diketonate complex and the α, β-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

What is claimed is:  
     
         1 . A process for chemical vapor deposition comprising depositing a film using a metal β-diketonate complex and an α, β-unsaturated alcohol.  
     
     
         2 . A process for chemical vapor deposition for forming a film on a substrate comprising contacting a metal β-diketonate complex and an α, β-unsaturated alcohol at the same time, at different times or alternately on the substrate.  
     
     
         3 . A process for chemical vapor deposition according to any one of claims  1  and  2  wherein the α, β-unsaturated alcohol is a compound characterized as:  
       
         
           
           
               
               
           
         
         where R 1 , R 2 , R 3 , R 4  and R 5  are chosen from the base groups X (halogens), H, alkyl bases and silicon type compounds, and each can be the same or different.  
       
     
     
         4 . A process for chemical vapor deposition according to any one of claims  1 - 3 , wherein the α, β-unsaturated alcohol is one or two types selected from the group consisting of: aryl alcohol, crotyl alcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol, 3-methyl-2-butene-1-ol, 1-butene-3-ol, 1-pentene-3-ol, 1-hexen-3-ol, 3-hexen-2, 5-diol, 2-methyl-3-butene-2-ol, 2, 4-hexadiene- 1-ol.  
     
     
         5 . A process for chemical vapor deposition according to any one of claims  1  and  2  wherein the metal β-diketonate complex is a compound characterized as:  
       
         
           
           
               
               
           
         
         where R 6 , R 7 , R 8 , R 9  and R are chosen from the base groups X (halogens), H, alkyl bases and silicon type compounds, and each can be the same or different, n is an integer from 1-4 and m is an integer from 0-5 and M is a metal.  
       
     
     
         6 . A process for chemical vapor deposition according to any one of claims  1 , 2 and 5 wherein β-diketone of the metal β-diketonate complex is selected from the group consisting of acetylacetone, dipivaloylmethane, hexafluoroacetylacetone, trifluoroacetylacerone.  
     
     
         7 . A process for chemical vapor deposition according to any one of claims  1 - 6 , wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.  
     
     
         8 . A material for use in chemical vapor deposition, the material being characterized as an α, β-unsaturated alcohol and used with a metal β-diketonate complex to form films.  
     
     
         9 . A material for use in chemical vapor deposition to form a film wherein the material is characterized as an α, β-unsaturated alcohol and used with a metal β-diketonate complex, and the α, β-unsaturated alcohol and the metal β-diketonate complex contact the substrate at the same time, at different times or alternately to form the film.  
     
     
         10 . A material for use in chemical vapor deposition process in  claim 8  or  9 , wherein the α, β-unsaturated alcohol is a compound characterized as:  
       
         
           
           
               
               
           
         
         where R 1 , R 2 , R 3 , R 4 , and R 5  are chosen from the base groups X (halogens), H, alkyl bases and silicon type compounds, and each can be the same or different.  
       
     
     
         11 . A material for use in chemical vapor deposition process in any one of claims  8 - 10  wherein the α, β-unsaturated alcohol is one or two types selected from the group consisting of: aryl alcohol, crotyl alcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol, 3-methyl-2-butene-1-ol, 1-butene-3-ol, 1-pentene-3-ol, 1-hexen-3-ol, 3-hexen-2, 5-diol, 2-methyl-3butene-2-ol 2, 4-hexadiene-1-ol.  
     
     
         12 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a compound oxide film containing Ru and Sr.  
     
     
         13 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a compound oxide film containing Ti, Ba and Sr.  
     
     
         14 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , where the film includes a compound oxide film containing Ti and Bi.  
     
     
         15 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a compound oxide film containing Sr, Ta and Bi.  
     
     
         16 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a compound oxide film containing Sr, Ta, Nb and Bi.  
     
     
         17 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a compound oxide film containing Pb, Zr and Ti.  
     
     
         18 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film contains as a main component Zr, Hf or La.  
     
     
         19 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , where the film includes a conductive material and contains Ru, Pt or Ir as a main component.  
     
     
         20 . A film fabricated by the chemical vapor deposition process in any one of claims  1 - 6 , wherein the film includes a conductive material and contains Cu as a main component.  
     
     
         21 . A device fabricated from films formed using the chemical vapor deposition process described in any one of claims  1 - 6 .