Micro structure and its manufacture method

Abstract

A laminated substrate is prepared, the laminated substrate having two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light. A mask member with a pattern is disposed in tight contact with the surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not transmitting the synchrotron radiation light. The synchrotron radiation light is applied on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on the bottom of an etched area.

What is claimed is:  
     
         1 . A method of manufacturing a micro structure comprising the steps of: 
 preparing a laminated substrate of two layers including a first film and a second film in tight contact with the first film, the second film being made of a material capable of being etched with synchrotron radiation light;    disposing a mask member with a pattern in tight contact with a surface of the second film of the laminated structure or at a distance from the surface of the second film, the pattern of the mask member being made of a material not substantially transmitting the synchrotron radiation light; and    applying the synchrotron radiation light on a partial surface area of the second film via the mask member to etch the second film where the synchrotron radiation light is applied and to expose a partial surface area of the first film on a bottom of an etched area.    
     
     
         2 . A method according to  claim 1 , wherein the first film is made of a conductive material and the method further comprises the steps of: 
 after said step of exposing the partial surface area of the first film,    depositing a metal member through galvanizing on the exposed partial surface area of the first film to fill with the metal member a region where the second film is removed; and    applying the synchrotron radiation light or an electron beam to the laminated substrate to remove the left second film.    
     
     
         3 . A method according to  claim 1 , further comprising the step of molding plastics by using the first film and the second film left on the partial surface area on the first film, after said step of exposing the partial surface area of the first film.  
     
     
         4 . A method according to  claim 1 , further comprising the steps of: 
 after said step of exposing the partial surface area of the first film,    depositing a metal member through galvanizing on the exposed partial surface area of the first film to fill with the metal member a region where the second film is removed; and    patterning the first film to partially leave the first film at an area corresponding to the metal member and a circumferential area of the metal member.    
     
     
         5 . A method according to  claim 1 , wherein the second film is made of polytetrafluoroethylene.  
     
     
         6 . A method according to  claim 2 , wherein the second film is made of polytetrafluoroethylene.  
     
     
         7 . A method according to  claim 3 , wherein the second film is made of polytetrafluoroethylene.  
     
     
         8 . A method according to  claim 4 , wherein the second film is made of polytetrafluoroethylene.  
     
     
         9 . A method according to  claim 1 , wherein said step of disposing the mask member includes the steps of: 
 depositing a metal film on a surface of the second film;    coating a photoresist film on a surface of the metal film;    exposing the photoresist film via a photo mask;    developing the exposed photoresist film to form a resist pattern; and    etching the metal film by using the resist pattern as a mask to form the mask member of a left metal film.    
     
     
         10 . A method according to  claim 2 , wherein said step of disposing the mask member includes the steps of: 
 depositing a metal film on a surface of the second film;    coating a photoresist film on a surface of the metal film;    exposing the photoresist film via a photo mask;    developing the exposed photoresist film to form a resist pattern; and    etching the metal film by using the resist pattern as a mask to form the mask member of a left metal film.    
     
     
         11 . A method according to  claim 3 , wherein said step of disposing the mask member includes the steps of: 
 depositing a metal film on a surface of the second film;    coating a photoresist film on a surface of the metal film;    exposing the photoresist film via a photo mask;    developing the exposed photoresist film to form a resist pattern; and    etching the metal film by using the resist pattern as a mask to form the mask member of a left metal film.    
     
     
         12 . A method according to  claim 4 , wherein said step of disposing the mask member includes the steps of: 
 depositing a metal film on a surface of the second film;    coating a photoresist film on a surface of the metal film;    exposing the photoresist film via a photo mask;    developing the exposed photoresist film to form a resist pattern; and    etching the metal film by using the resist pattern as a mask to form the mask member of a left metal film.    
     
     
         13 . A method according to  claim 9 , further comprising the step of: 
 removing the left metal film after said step of etching the second film and exposing the partial surface area of the first film on the bottom of the etched area.    
     
     
         14 . A method according to  claim 10 , further comprising the step of: 
 removing the left metal film after said step of etching the second film and exposing the partial surface area of the first film on the bottom of the etched area.    
     
     
         15 . A method according to  claim 11 , further comprising the step of: 
 removing the left metal film after said step of etching the second film and exposing the partial surface area of the first film on the bottom of the etched area.    
     
     
         16 . A method according to  claim 12 , further comprising the step of: 
 removing the left metal film after said step of etching the second film and exposing the partial surface area of the first film on the bottom of the etched area.    
     
     
         17 . A micro structure comprising: 
 a first film made of a material having an etching resistance to radiation light different from an etching resistance of polytetrafluoroethylene; and    a second film in tight contact with said first film and made of polytetrafluoroethylene, said second film being patterned, and a surface of said first film being exposed in an area where a pattern of said second film is not formed.    
     
     
         18 . A micro structure comprising: 
 a polytetrafluoroethylene film having a through hole; and    a metal member filling the through hole.