Array substrate for liquid crystal display device and method for manufacturing the same

Abstract

An array substrate for a liquid crystal display device includes a flexible substrate, a buffer layer on the flexible substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, and a pixel electrode on the thin film transistor.

What is claimed is:  
     
         1 . An array substrate for a liquid crystal display device, comprising: 
 a flexible substrate;    a buffer layer on the flexible substrate;    a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer; and    a pixel electrode on the thin film transistor.    
     
     
         2 . The array substrate according to  claim 1 , wherein the flexible substrate includes at least a plastic material.  
     
     
         3 . The array substrate according to  claim 2 , wherein the plastic material includes at least one of polycarbonate (PC) and polystyrene.  
     
     
         4 . The array substrate according to  claim 1 , wherein the buffer layer includes at least one of silicon oxide (SiO 2 ) and silicon nitride (SiN x ).  
     
     
         5 . The array substrate according to  claim 1 , wherein the gate electrode includes at least one of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W).  
     
     
         6 . The array substrate according to  claim 1 , wherein the source and drain electrodes include at least one of molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy.  
     
     
         7 . The array substrate according to  claim 1 , wherein the pixel electrode includes at least one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).  
     
     
         8 . The array substrate according to  claim 1 , further including a gate line connected to the gate electrode, and a data line crossing the gate line.  
     
     
         9 . A method for fabricating an array substrate, comprising the steps of: 
 forming a buffer layer on a metal substrate;    forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer;    forming a pixel electrode contacting the drain electrode;    removing the metal substrate; and    forming a plastic material beneath the buffer layer.    
     
     
         10 . The method according to  claim 9 , wherein the substrate is removed by an etchant.  
     
     
         11 . The method according to  claim 9 , wherein the step of forming a plastic material includes at least using a roller to apply the plastic material to the buffer layer.  
     
     
         12 . The method according to  claim 9 , wherein the buffer layer includes at least one of silicon oxide (SiO 2 ) and silicon nitride (SiN x ).  
     
     
         13 . The method according to  claim 9 , wherein the gate electrode includes at least one of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W).  
     
     
         14 . The method according to  claim 9 , wherein the source and drain electrodes include at least one of molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy.  
     
     
         15 . The method according to  claim 9 , wherein the pixel electrode includes at least one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).  
     
     
         16 . The method according to  claim 9 , wherein the plastic material includes at least one of polycarbonate (PC) and polystyrene.  
     
     
         17 . A liquid crystal display device, comprising: 
 an elastic substrate;    a buffer layer on the elastic substrate;    a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer;    a passivation layer on the thin film transistor; and    a pixel electrode on the passivation layer.    
     
     
         18 . The device according to  claim 17 , wherein the elastic substrate includes at least one of polycarbonate (PC) and polystyrene.  
     
     
         19 . The device according to  claim 17 , wherein the buffer layer includes at least one of silicon oxide (SiO 2 ) and silicon nitride (SiN x ).  
     
     
         20 . The device according to  claim 17 , wherein the passivation layer includes at least one of benzocyclobutene and an acrylic resin.