US2002048950A1PendingUtilityA1
Application of vapor phase HFACAC-based compound for use in copper decontamination and cleaning processes
Assignee: CHARTERED SEMICONDUCTOR MFGPriority: Jul 18, 2000Filed: Jun 18, 2001Published: Apr 25, 2002
Est. expiryJul 18, 2020(expired)· nominal 20-yr term from priority
Inventors:Yakub AliyuSimon ChooiMei Sheng ZhouJohn SudijonoSubhash GuptaSudipto Ranendra RoyPaul HoYi Xu
H10P 70/40H10P 70/12Y10S438/906C23F 1/12
40
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of copper decontamination in the fabrication of an integrated circuit comprising:
introducing a decontamination compound in vapor form over elemental copper wherein said compound reacts with all of said elemental copper and forms a volatile compound that can be flushed away thereby completing said copper decontamination.
2 . The method according to claim 1 wherein said decontamination compound comprises an organic-based HFACAC compound.
3 . The method according to claim 1 wherein said decontamination compound comprises an organic-based HFAC compound.
4 . The method according to claim 1 wherein said step of introducing said decontamination compound is done by spraying said decontamination compound from a nozzle.
5 . The method according to claim 1 wherein said step of introducing said decontamination compound is done under pressure.
6 . The method according to claim 1 wherein said step of spraying said decontamination compound comprises combining said decontamination compound with an inert gas as a carrier.
7 . The method according to claim 1 wherein said elemental copper is found on surfaces of equipment and tools.
8 . The method according to claim 1 wherein said elemental copper is found on wafers to be reclaimed.
9 . The method according to claim 1 wherein said elemental copper is found on surfaces after a spill.
10 . A method of copper decontamination in the fabrication of an integrated circuit comprising:
spraying an organic-based HFACAC compound in vapor form over elemental copper wherein said compound reacts with all of said elemental copper and forms a volatile compound that can be flushed away thereby completing said copper decontamination.
11 . The method according to claim 10 wherein said step of spraying said organic-based HFACAC compound comprises combining said compound with an inert gas as a carrier.
12 . The method according to claim 10 wherein said elemental copper is found on surfaces of equipment and tools.
13 . The method according to claim 10 wherein said elemental copper is found on wafers to be reclaimed.
14 . The method according to claim 10 wherein said elemental copper is found on surfaces after a spill.
15 . A copper decontamination compound comprising:
an organic-based HFACAC compound in vapor form.
16 . The compound according to claim 15 further comprising an inert gas as a carrier.
17 . The copper decontamination compound according to claim 15 wherein said copper decontamination compound reacts with elemental copper found on surfaces of equipment and tools and forms a volatile compound that can be flushed away thereby completing copper decontamination.
18 . The copper decontamination compound according to claim 15 wherein said copper decontamination compound reacts with elemental copper found on wafers to be reclaimed and forms a volatile compound that can be flushed away thereby completing copper decontamination.
19 . The copper decontamination compound according to claim 15 wherein said copper decontamination compound reacts with elemental copper found on surfaces after a spill and forms a volatile compound that can be flushed away thereby completing copper decontamination.
20 . The copper decontamination compound according to claim 15 wherein said copper decontamination compound is used to dissolve contaminants in a copper preconcentrate wherein said copper preconcentrate can then be subjected to copper metallic trace detection and analysis.Join the waitlist — get patent alerts
Track US2002048950A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.