Thinned, stackable semiconductor device having low profile

Abstract

A method of manufacturing a semiconductor device, comprising preparing a semiconductor device wafer which is formed with an LSI; working the semiconductor device wafer from the back surface thereof, thereby to diminish the thickness of the semiconductor device wafer to at most 200 [μm]; forming penetrant apertures in the resulting semiconductor device wafer; forming wiring plugs ( 23 in FIG. 7 ) in the respective penetrant apertures; dicing the semiconductor device wafer, thereby to be divided into semiconductor chips ( 7 ) each of which includes the wiring plugs ( 23 ); and mounting at least two of the semiconductor chips ( 7 ) over a printed-wiring circuit board ( 25 ) through bumps ( 10 ) connected with the wiring plugs ( 23 ). Thus, the ultrathin stacked multilevel mounting of semiconductor device components can be realized at a high reliability and with a high functionality.

What is claimed is:  
     
         1 . A method of manufacturing a semiconductor device, comprising: 
 the step of preparing a semiconductor device wafer which is formed with an LSI;    the step of working the semiconductor device wafer from a back surface thereof, thereby to diminish a thickness of said semiconductor device wafer to at most 200 [μm];    the step of forming a penetrant hole in the resulting semiconductor device wafer; and    the step of forming a wiring plug in the penetrant hole.    
     
     
         2 . A semiconductor device comprising: 
 a semiconductor device wafer which is formed with an LSI in its front surface, and which has been worked from its back surface, thereby to diminish its thickness to at most 200 [μm];    a penetrant hole which is formed in the semiconductor device wafer; and    a wiring plug which is formed in the penetrant hole.    
     
     
         3 . A method of manufacturing a semiconductor device, comprising: 
 the step of preparing a semiconductor device wafer which is formed with an LSI, and an electrode pad lying at a peripheral edge of the LSI;    the step of working the semiconductor device wafer from a back surface thereof, thereby to diminish a thickness of said semiconductor device wafer to at most 200 [μm];    the step of coating both a front surface and the back surface of the resulting semiconductor device wafer with an insulating material;    the step of forming a hole which penetrates through coatings of the insulating material, the electrode pad and said semiconductor device wafer; and    the step of forming a wiring plug for joining the front and back surfaces of said semiconductor device wafer, in the hole.    
     
     
         4 . A method of manufacturing a semiconductor device as defined in  claim 3 , further comprising after said step of forming said hole, the step of coating both the surfaces of the resulting semiconductor device wafer with an insulating material again, thereby to fill up said hole with the insulating material, and then forming a penetrant aperture having a diameter smaller than that of said hole, in said insulating material contained in said hole.  
     
     
         5 . A method of manufacturing a semiconductor device, comprising: 
 the step of preparing a semiconductor device wafer which is formed with an LSI, and an electrode pad lying at a peripheral edge of the LSI;    the step of working the semiconductor device wafer from a back surface thereof, thereby to diminish a thickness of said semiconductor device wafer to at most 200 [μm];    the step of coating both a front surface and the back surface of the resulting semiconductor device wafer with an insulating material;    the step of forming a hole which penetrates through coatings of the insulating material, the electrode pad and said semiconductor device wafer;    the step of coating both the surfaces of the resulting semiconductor device wafer with an insulating material again, thereby to fill up said hole with the insulating material;    the step of forming a penetrant aperture having a diameter smaller than that of said hole, in said insulating material contained in said hole, and simultaneously leaving said insulating material on an inwall of said hole;    the step of forming wiring layers which join the interior of said penetrant aperture and the front and back surfaces of said semiconductor device wafer; and    the step of patterning the wiring layers, thereby to form a wiring plug which includes respective electrode pads on said front and back surfaces of said semiconductor device wafer, and which joins said front and back surfaces of said semiconductor device wafer.    
     
     
         6 . A method of manufacturing a semiconductor device as defined in  claim 5 , wherein said wiring plug is formed by subjecting said semiconductor device wafer to electroless plating and electroplating in succession.  
     
     
         7 . A method of manufacturing a semiconductor device as defined in either of claims  3  and  5 , wherein the insulating materials are made of a member selected from the group consisting of a liquefied resin and an organic resist material.  
     
     
         8 . A method of manufacturing a semiconductor device, comprising: 
 the step of preparing a semiconductor device wafer which is formed with an LSI;    the step of working the semiconductor device wafer from a back surface thereof, thereby to diminish a thickness of said semiconductor device wafer to at most 200 [μm];    the step of forming penetrant apertures in the resulting semiconductor device wafer;    the step of forming wiring plugs in the respective penetrant apertures;    the step of dicing said semiconductor device wafer, thereby to be divided into semiconductor chips each of which includes the wiring plugs; and    the step of stacking and mounting at least two of the semiconductor chips over a printed-wiring circuit board through connection means connected with said wiring plugs.    
     
     
         9 . A method of manufacturing a semiconductor device as defined in any of claims  1 ,  3 ,  5  and  8 , wherein a working method in the case of working said semiconductor device wafer from said back surface is one selected from the group consisting of grinding, chemical mechanical polishing and etching.  
     
     
         10 . A method of manufacturing a semiconductor device as defined in  claim 8 , wherein the connection means includes at least one member selected from the group consisting of a solder ball bump, a wire bump, an anisotropic conductive film and a conductive paste.  
     
     
         11 . A semiconductor device comprising: 
 a printed-wiring circuit board which is furnished with lands on its front surface; and    a plurality of semiconductor chips each of which has a thickness of at most 200 [μm], and which are stacked and mounted over the printed-wiring circuit board through connection means;    each of the semiconductor chips including penetrant apertures which penetrate through said each semiconductor chip, and wiring plugs which are respectively formed in the penetrant apertures;    the lands and the wiring plugs being electrically connected by the connection means, respectively.