Coil for sputter deposition

Abstract

Coils for use within high density plasma chambers are provided that do not electrically disconnect or short circuit following repeated depositions and that produce films having reduced in-film defect densities. To reduce in-film defect densities, dielectric inclusion content, porosity, grain size and surface roughness of a coil are reduced, while the mechanical strength of the coil is increased so as to both decrease defect generation and thermal creep rate (e.g., to prevent electrical disconnection or short circuiting of the coil following repeated depositions).

The invention claimed is:  
     
         1 . A copper coil for use in a high density plasma deposition chamber characterized by: 
 a hardness greater than 45 Rockwell.    
     
     
         2 . The copper coil of  claim 1  further characterized by a grain size of less than 50 microns.  
     
     
         3 . The copper coil of  claim 1  further characterized by a surface roughness of less than 20 micro inches.  
     
     
         4 . The copper coil of  claim 1  further characterized by more than 50% material having (200) texture and less than 3% material having (111) texture.  
     
     
         5 . The copper coil of  claim 1  further characterized by: 
 a grain size of less than 50 microns; and  
 a surface roughness of less than 20 micro inches.  
 
     
     
         6 . The copper coil of  claim 1  further characterized by a grain size of less than 25 microns.  
     
     
         7 . The copper coil of  claim 1  further characterized by a surface roughness of less than 5 micro inches.  
     
     
         8 . The copper coil of  claim 1  further characterized by: 
 a grain size of less than 25 microns; and  
 a surface roughness of less than 5 micro inches.  
 
     
     
         9 . The copper coil of  claim 1  further characterized by a purity level between 99.995% and 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 5.0 ppm; and  
 a sulfur content of less than 1.0 ppm.  
 
     
     
         10 . The copper coil of  claim 1  further characterized by a purity level of less than 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 5.0 ppm; and  
 a sulfur content of less than 1.0 ppm.  
 
     
     
         11 . The copper coil of  claim 1  further characterized by a purity level between 99.995% and 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 1.0 ppm; and  
 a sulfur content of less than 0.05 ppm.  
 
     
     
         12 . The copper coil of  claim 1  further characterized by a purity level of less than 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 1.0 ppm; and  
 a sulfur content of less than 0.05 ppm.  
 
     
     
         13 . A copper coil for use in a high density plasma deposition chamber characterized by: 
 a grain size of less than 50 microns.    
     
     
         14 . The copper coil of  claim 13  further characterized by a grain size of less than 25 microns.  
     
     
         15 . The copper coil of  claim 13  further characterized by a surface roughness of less than 20 micro inches.  
     
     
         16 . The copper coil of  claim 15  further characterized by a surface roughness of less than 5 micro inches.  
     
     
         17 . The copper coil of  claim 14  further characterized by a surface roughness of less than 5 micro inches.  
     
     
         18 . The copper coil of  claim 13  further characterized by a purity level between 99.995% and 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a carbon content of less than 5.0 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 5.0 ppm; and  
 a sulfur content of less than 1.0 ppm.  
 
     
     
         19 . The copper coil of  claim 13  further characterized by a purity level less than 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a carbon content of less than 5.0 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 5.0 ppm; and  
 a sulfur content of less than 1.0 ppm.  
 
     
     
         20 . The copper coil of  claim 14  further characterized by a purity level between 99.995% and 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 1.0 ppm; and  
 a sulfur content of less than 0.05 ppm.  
 
     
     
         21 . The copper coil of  claim 14  further characterized by a purity level less than 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;  
 a hydrogen content of less than 1.0 ppm;  
 an oxygen content of less than 1.0 ppm; and  
 a sulfur content of less than 0.05 ppm.  
 
     
     
         22 . A copper coil for use in a high density plasma deposition chamber characterized by a purity level between 99.995% and 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;    a hydrogen content of less than 1.0 ppm;    an oxygen content of less than 5.0 ppm; and    a sulfur content of less than 1.0 ppm.    
     
     
         23 . The copper coil of  claim 22  further characterized by at least one of: 
 an oxygen content of less than 1.0 ppm; and  
 a sulfur content of less than 0.05 ppm.  
 
     
     
         24 . A copper coil for use in a high density plasma deposition chamber characterized by a purity level less than 99.9999% and at least one of: 
 an antimony, an arsenic and a bismuth content each of less than 0.03 ppm;    a hydrogen content of less than 1.0 ppm;    an oxygen content of less than 5.0 ppm; and    a sulfur content of less than 1.0 ppm.    
     
     
         25 . A semiconductor device formed by a method comprising the steps of: 
 providing a substrate;    providing a copper target;    providing a copper coil between the substrate and the copper target, the copper coil characterized by a hardness greater than 45 Rockwell; and    sputtering the copper target so as to deposit a copper film on the substrate.