Cleaning equipment, cleaning method, semiconductor manufacturing device, and semiconductor device

Abstract

A cleaning equipment and a cleaning method which prevent occurrence of an after-corrosion phenomenon, which would otherwise arise between Al and Cu; occurrence of defects in an area between Al and Cu, which would otherwise be caused when the time of operation for removing residual chlorine ions or the time of rinsing operation is increased; and occurrence of side etching; and enables attainment of a good etch profile. Ozone water (e.g., oxygen water of high concentration) supplied from an inlet port is introduced into a container from an outlet port by way of an inlet pipe. A robust surface oxide film can be formed on the surface of the wafer (i.e., a substrate to be rinsed). As a result, there can be prevented side etching of Al, which would otherwise be induced by the background art. Further, there can be prevented occurrence of defects in Al in the vicinity of a Cu deposit, which would otherwise be induced by a battery effect. Moreover, occurrence of an after-corrosion phenomenon can also be prevented.

What is claimed is:  
     
         1 . Cleaning equipment for removing remover solvent from a substrate to be rinsed, comprising: 
 a container which retains the substrate therein and has an inlet port for introducing a solution into the container in a controllable manner, and an outlet port for discharging the solution outside in a controllable manner; and    an oxygen-water-of-high-concentration inlet pipe for introducing oxygen water of high concentration into the container.    
     
     
         2 . The cleaning equipment according to  claim 1 , wherein a solution introduced into said container by way of the inlet port is purified water.  
     
     
         3 . The cleaning equipment according to  claim 2 , wherein the oxygen water of high concentration is ozone water.  
     
     
         4 . The cleaning equipment according to  claim 3 , wherein a dissolved ozone content ranges from 1 ppm to 30 ppm.  
     
     
         5 . The cleaning equipment according to  claim 2 , wherein the oxygen water of high concentration is aqueous hydrogen peroxide.  
     
     
         6 . The cleaning equipment according to  claim 5 , wherein the concentration of the aqueous hydrogen peroxide ranges from 1 to 5%.  
     
     
         7 . A cleaning method for removing remover solvent from a substrate to be rinsed, comprising the step of: 
 introducing oxygen water of high concentration into a container by way of an oxygen-water-of-high-concentration inlet pipe which introduces an oxygen-water-of-high-concentration, the container retaining the substrate therein and having an inlet port for introducing a solution into the container in a controllable manner and an outlet port for discharging the solution outside in a controllable manner.    
     
     
         8 . The cleaning method according to  claim 7 , wherein a solution introduced into the container by way of the inlet port is purified water.  
     
     
         9 . The cleaning method according to  claim 8 , wherein the oxygen water of high concentration is ozone water.  
     
     
         10 . The cleaning method according to  claim 9 , wherein a dissolved ozone content ranges from 1 ppm to 30 ppm.  
     
     
         11 . The cleaning method according to  claim 10 , wherein the oxygen water of high concentration is aqueous hydrogen peroxide.  
     
     
         12 . The cleaning method according to  claim 11 , wherein the concentration of the aqueous hydrogen peroxide ranges from 1 to 5%.  
     
     
         13 . A semiconductor device manufacturing device for manufacturing a semiconductor device by utilization of the cleaning equipment according to any one of claims  1  through  6 .