Method for manufacturing diffusion barrier layer

Abstract

A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer. A refractory metal layer or a nitride layer of refractor metal is formed on the substrate and a top surface and a sidewall of the patterned copper layer. The refractory metal layer or the nitride layer of refractor metal is converted by HDP treatment into an implanted layer as a diffusion barrier layer, where gas of N 2 , O 2 , NH 3 , NO 2 , or N 2 O are used for producing implanting ions. A thermal process is performed to stabilize a diffusion barrier quality of the oxygen-containing implantation layer.

What is claimed is:  
     
         1 . A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of: 
 forming a refractory metal layer on the substrate and a top surface and a sidewall of the patterned copper layer;    performing a high density plasma (HDP) treatment to convert the refractory metal layer into an implantation layer which serves as a diffusion barrier layer; and    performing a thermal process to stabilize a diffusion barrier quality of the implantation layer.    
     
     
         2 . The method of  claim 1 , wherein the step of performing the HDP treatment comprises using one gas selected from a group consisting of O 2  and N 2 O.  
     
     
         3 . The method of  claim 1 , wherein the step of performing the HDP treatment comprises using one gas selected from a group consisting of N 2 , NH 3 , and N 2 O.  
     
     
         4 . The method of  claim 1 , wherein the step of performing the HDP treatment comprises implanting oxygen and nitrogen.  
     
     
         5 . The method of  claim 1 , wherein the implantation layer includes a titanium oxynitride (TiNOx) layer.  
     
     
         6 . The method of  claim 1 , wherein the refractory metal layer is formed from titanium by deposition.  
     
     
         7 . A method for manufacturing a diffusion barrier layer over a substrate having a patterned copper layer, the method comprising the steps of: 
 forming a nitride layer of refractory metal on the substrate and a top surface and a sidewall of the patterned copper layer;    performing a plasma treatment to convert the nitride layer of refractory metal into an implantation layer which serves as a diffusion barrier layer; and    performing a thermal process to stabilize a diffusion barrier quality of the implantation layer.    
     
     
         8 . The method of  claim 7 , wherein the step of performing the plasma treatment comprises performing a high density plasma (HDP) treatment.  
     
     
         9 . The method of  claim 7 , wherein the step of performing the plasma treatment comprises using one gas selected from a group consisting of O 2  and N 2 O.  
     
     
         10 . The method of  claim 7 , wherein the step of performing the plasma treatment comprises using one gas selected from a group consisting of N 2 , NH 3 , and N 2 O.  
     
     
         11 . The method of  claim 7 , wherein the step of performing the plasma treatment comprises implanting oxygen and nitrogen.  
     
     
         12 . The method of  claim 7 , wherein the step of forming the nitride layer of refractory metal comprises forming a titanium nitride layer.  
     
     
         13 . The method of  claim 7 , wherein the step of forming the nitride layer of refractory metal comprises deposition  
     
     
         14 . The method of  claim 7 , wherein the implantation layer includes a titanium oxynitride (TiNOx) layer.  
     
     
         15 . A method of manufacturing a diffusion barrier layer, comprising the steps of: 
 providing a substrate having a patterned copper layer formed thereon;    performing a high density plasma (HDP) treatment to directly implant atoms into the patterned copper layer; and    performing a thermal process.    
     
     
         16 . The method of  claim 15 , wherein the step of performing the HDP treatment comprises using a gas selected from a group consisting of N 2 , NH 3 , and N 2 O.  
     
     
         17 . The method of  claim 15 , wherein the step of performing the HDP treatment comprises using a gas selected from a group consisting of O 2  and N 2 O.  
     
     
         18 . The method of  claim 15 , wherein the step of performing the HDP treatment comprises using a gas containing oxygen atoms and nitrogen atoms.