Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications

Abstract

This invention is directed to pure and modified Ta 2 O 5 thin films deposited on suitable substrates and methods for making these Ta 2 O 5 thin films. These Ta 2 O 5 thin films exhibit superior properties for microwave communication, dynamic random access memory and integrated electronic applications. The Ta 2 O 5 thin films perform well in these types of technologies due to the Ta 2 O 5 thin film component which allows for high dielectric constants, low dielectric loss, and good temperature and frequency stability, thus making them particularly useful in high frequency microwave applications.

What is claimed is:  
     
         1 . A method for fabricating composite thin films comprising the steps of: 
 (a) depositing a chemical precursor solution onto a suitable substrate and forming a wet film of Ta 2 O 5 ;    (b) baking said wet film which was deposited on suitable substrate and removing organics present in said solution;    (c) forming a continuous Ta 2 O 5  thin film on said substrate;    (d) baking said continuous Ta 2 O 5  thin film deposited on substrate under ambient conditions;    (e) repeating steps (c) and (d) and obtaining a desired thickness of said thin film; and    (f) annealing said continuous Ta 2 O 5  thin film deposited on said substrate at varying temperatures, times and oxygen flow rates and forming said thin film-substrate heterostructure having high dielectric constants and low dielectric loss at microwave frequencies.    
     
     
         2 . A method for fabricating composite thin films in  claim 1  further comprising the step of selecting precursor compounds and solvents and forming said chemical precursor solution.  
     
     
         3 . A method for fabricating composite thin films in  claim 2  further comprising the step of dissolving said precursor compounds in said solvents and forming a homogenous solution.  
     
     
         4 . A method for fabricating composite thin films in  claim 3  further comprising the step of hydrolyzing and polycondensating said precursor solution and stabilizing said precursor solution.  
     
     
         5 . A method for fabricating composite thin films in  claim 4  further comprising the step of utilizing ambient conditions during said step (b).  
     
     
         6 . A method for fabricating composite thin films in  claim 4 , further comprising the step of controlling ambient conditions during said step (b).  
     
     
         7 . A method for fabricating composite thin films in  claim 4 , further comprising the step of drying said thin film between steps (a) and (b).  
     
     
         8 . A thin film substrate-heterostructure comprising a bottom substrate layer, an intermediate Ta 2 O 5  layer and a top microwave component surface.  
     
     
         9 . A thin film substrate-heterostructure of  claim 8  further comprising said bottom substrate layer selected from a group consisting of glass, single crystal and polycrystalline ceramics.  
     
     
         10 . A thin film substrate of  claim 9  wherein said intermediate layer comprises a pure Ta 2 O 5  thin film.  
     
     
         11 . A thin film substrate of  claim 9  wherein said intermediate layer comprises a modified Ta 2 O 5  thin film.  
     
     
         12 . A thin film substrate comprising a bottom substrate layer, a first intermediate Ta 2 O 5  layer positioned on said bottom substrate layer, a second intermediate thin film positioned on said first intermediate layer and a top microwave component surface.  
     
     
         13 . A thin film substrate of  claim 12  further comprising said bottom substrate layer selected from a group consisting of glass, single crystal and polycrystalline ceramics.  
     
     
         14 . A thin film substrate of  claim 13  wherein said second intermediate thin film comprises a suitable microwave material.  
     
     
         15 . A thin film substrate of  claim 14  wherein said suitable microwave material second intermediate layer comprises a pure Ta 2 O 5  thin film.  
     
     
         16 . A thin film substrate of  claim 14  wherein said suitable microwave material second intermediate layer comprises a modified Ta 2 O 5  thin film.