Semiconductor device and method for manufacturing same

Abstract

In a method for manufacturing a semiconductor device, a first insulation film is grown on a semiconductor substrate, a first interconnect is formed thereover, and a second insulation film is grown over the first insulation film, including the first interconnect. A first connecting through hole, disposed at an edge part of the first interconnect, and a second connecting through hole, disposed at the center part thereof, are then formed, a metal film being additionally grown on the second insulation film, after which chemical metal polishing is used to remove the metal film, over which is formed a second interconnect.

What is claimed is:  
     
         1 . A semiconductor device comprising a first interconnect, a second interconnect provided in opposite to said first interconnect, and an insulation film provided between said first and second interconnects, wherein said first and second interconnects are connected to each other via a plurality of metal members each of which being provided inside of each one of a plurality of connecting through holes disposed in said insulation film, respectively.  
     
     
         2 . A semiconductor device according to  claim 1 , wherein a first metal members of a part of said plurality of said metal members which are formed inside a first connecting through holes, are locating in an area closed to an edge portion of said interconnect, while a second metal members of the rest part of said plurality of said metal members which are formed inside a second connecting through holes, are locating in an area formed at around a center portion of said interconnect.  
     
     
         3 . A semiconductor device according to  claim 2 , wherein a total amount of cross-sectional area summing up the cross-sectional areas of respective said second metal members is larger than that summing up the cross-sectional areas of respective said first metal members.  
     
     
         4 . A semiconductor device according to  claim 2 , wherein a number of said second metal members outnumbers that of said first metal members.  
     
     
         5 . A semiconductor device according to  claim 2 , wherein each one of said second metal members has a cross-sectional area being larger than that of each one of said first metal members.  
     
     
         6 . A semiconductor device according to  claim 2 , wherein a center portion of a surface of said insulation film to which said second interconnect is attached, shows a concaved configuration.  
     
     
         7 . A semiconductor device according to  claim 1 , wherein said second metal members having a cross sectional configuration having a longitudinal center axis and each being parallely arranged to each other along said longitudinal center axis thereof.  
     
     
         8 . A semiconductor device according to  claim 1 , wherein a connecting portion of at least one of said first and second interconnects has a wide area.  
     
     
         9 . A method for manufacturing a semiconductor device, comprising: 
 growing a first insulation film on a semiconductor substrate;    forming a first interconnect on said first insulation film;    growing a second insulation film on said first insulation film, including said first interconnect;    providing a first connecting through hole in said insulation film and disposed at a position closed to an edge part of said first interconnect and a second connecting through hole in said insulation film and disposed at the center part thereof;    growing a metal film on said second insulation film; and    removing said metal film using chemical and mechanical polishing.    
     
     
         10 . A method for manufacturing a semiconductor device according to  claim 9 , wherein said connecting through holes include a plurality of through holes provided at the center part of said first interconnect.  
     
     
         11 . A method for manufacturing a semiconductor device according to  claim 10 , wherein said connecting through holes are elongated and mutually arranged to each other in parallel.