Implementing contacts for bodies of semiconductor-on-insulator transistors

Abstract

A method and semiconductor structure are provided for implementing body contacts for semiconductor-on-insulator transistors. A bulk semiconductor substrate is provided. A mask is applied to the bulk semiconductor substrate to block an insulating implant layer in selected regions. The selected regions provide for body contact for transistors. Holes are formed extending into the bulk semiconductor substrate. The holes are filled with an electrically conductive material to create stud contacts to the bulk semiconductor substrate. In the preferred embodiment, the semiconductor-on-insulator is silicon on an oxide insulating layer and the invention provides a body contact for SOI transistors.

What is claimed is:  
     
         1 . A method for implementing body contacts for semiconductor-on-insulator transistors comprising the steps of: 
 (a) providing a bulk semiconductor substrate;    (b) applying a mask to selected regions in said bulk semiconductor substrate, said selected regions for body contacts for the transistors;    (c) implanting an insulator to create a buried insulating layer above said bulk semiconductor substrate; said selected regions are masked to block said implantation in said selected regions;    (d) forming holes extending into said buried insulating layer and said bulk semiconductor substrate; and    (e) filling said holes with an electrically conductive material to create stud contacts to said bulk semiconductor substrate:    
     
     
         2 . A method for implementing for semiconductor-on-insulator transistors as recited in  claim 1  wherein the steps of applying said mask to said selected regions and of implanting said insulator creates a buried insulating layer with said masked regions to create openings aligned with bodies of said transistors.  
     
     
         3 . A method for implementing body contacts for semiconductor-on-insulator transistors as recited in  claim 1  wherein the step of forming holes into said bulk semiconductor substrate and said insulating layer includes the step of etching holes into said insulating layer and said bulk semiconductor substrate.  
     
     
         4 . A method for implementing body contacts for semiconductor-on-insulator transistors as recited in  claim 1  wherein said semiconductor is silicon, said insulator is oxygen, said buried insulating layer is a buried oxide layer and the step of filling said holes with an electrically conductive material to create stud contacts to a bulk silicon substrate includes the step of filling said holes with tungsten to create stud contacts to said bulk silicon substrate.  
     
     
         5 . A method for implementing body contacts for semiconductor-on-insulator transistors as recited in  claim 1  wherein said semiconductor is silicon, said insulator is oxygen; said buried insulating layer is a buried oxide layer and the step of filling said holes with an electrically conductive material to create stud contacts to a bulk silicon substrate includes the step of filling said holes with copper to create stud contacts to said bulk silicon substrate.  
     
     
         6 . A method for implementing body contacts for semiconductor-on-insulator transistors as recited in  claim 1  wherein said semiconductor is silicon, said insulator is oxygen, and said buried insulating layer is a buried oxide layer and the step of filling said holes with an electrically conductive material to create stud contacts to a bulk silicon substrate includes the step of filling said holes with aluminum to create stud contacts to said bulk silicon substrate.  
     
     
         7 . A method for implementing body contacts for semiconductor-on-insulator (SOI) transistors as recited in  claim 1  wherein said semiconductor is silicon, said insulator is oxygen, and said buried insulating layer is a buried oxide layer, and the step of filling said holes with an electrically conductive material to create stud contacts to said bulk semiconductor substrate includes the step of filling said holes with doped semiconductor to create stud contacts to said bulk semiconductor substrate.  
     
     
         8 . A method for implementing body contacts for silicon-on-insulator (SOI) transistors comprising the steps of: 
 (a) providing a bulk silicon substrate;    (b) applying a mask to selected regions of said bulk silicon substrate;    (c) implanting oxygen to said masked silicon substrate to create a buried oxide insulating layer and said masked selected regions to create openings aligned with bodies of said transistors for body contact for the SOI transistors;    (d) etching holes extending into said insulating layer and said bulk silicon substrate; and    (e) filling said holes with an electrically conductive material selected from the group consisting of tungsten, copper, aluminum, gold, and doped semiconductor to create stud contacts to said bulk semiconductor substrate.    
     
     
         9 . An integrated circuit having a silicon-on-insulator device made by the method of  claim 8 .  
     
     
         10 . A semiconductor structure for implementing body contacts for silicon-on-insulator (SOI) transistors comprising: 
 (a) a bulk silicon substrate;    (b) SOI transistors formed on said bulk silicon substrate;    (c) a patterned oxygen implant layer, said oxygen implant blocked in selected regions; said selected regions providing body contact for the SOI transistors; and    (d) electrically conductive contacts extending into said bulk silicon substrate.    
     
     
         11 . A semiconductor structure for implementing body contacts for silicon-on-insulator (SOI) transistors as recited in  claim 10  further includes connections for a selected voltage potential connected to said electrically conductive contacts extending into said bulk silicon substrate.