Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy

Abstract

A chemical-mechanical polishing method utilizes a shallow dummy pattern for planarizing a dielectric layer. The method includes the steps of first forming a shallow dummy pattern on the dielectric layer, and then coating a patterned photoresist layer over the dielectric layer. Thereafter, the photoresist layer is used as a mask to form openings in other areas of the dielectric layer. Subsequently, the photoresist layer is removed to expose the shallow dummy pattern, and then a glue/barrier layer and a conductive layer are sequentially deposited. Next, a chemical-mechanical polishing operation is carried out to remove excess conductive layer and glue/barrier layer above the dielectric layer as well as the shallow dummy pattern at the same time. Since the removal rate of glue/barrier layer in each area above the dielectric layer is about the same, a planar substrate surface is obtained.

What is claimed is:  
     
         1 . A method of planarization, comprising the steps of: 
 forming a patterned metallic layer over a semiconductor substrate;    forming a dielectric layer over the patterned metallic layer;    patterning the dielectric layer to form a plurality of shallow dummy patterns;    forming a mask layer over the dielectric layer such that the mask layer exposes a plurality of areas for forming openings while covering the shallow dummy patterns;    patterning the dielectric layer again using the mask layer as a mask to form openings in the dielectric layer, wherein the openings expose a portion of the metallic layer;    removing the mask layer to expose the shallow dummy patterns;    forming a glue/barrier layer over the dielectric layer;    forming a conductive layer over the glue/barrier layer, wherein the conductive material completely fills the openings and the shallow dummy patterns; and    performing a chemical-mechanical polishing operation to remove excess conductive layer and glue/barrier layer above the dielectric layer, and at the same time removing the shallow dummy patterned to obtain a planarized surface.    
     
     
         2 . The method of  claim 1 , wherein the shallow dummy pattern has a depth of 300 Å-500 Å.  
     
     
         3 . The method of  claim 1 , wherein the line width and the line density of the shallow dummy pattern are very similar to the line width in the areas having openings.  
     
     
         4 . The method of  claim 1 , wherein the shallow dummy pattern is formed in a low pattern density areas for forming the openings.  
     
     
         5 . The method of  claim 1 , wherein the step of forming the glue/barrier layer includes depositing a material selected from the group consisting of tantalum nitride, tantalum, titanium and titanium nitride.  
     
     
         6 . The method of  claim 1 , wherein the step of forming the conductive layer includes depositing copper.  
     
     
         7 . The method of  claim 1 , wherein the step of forming a mask layer includes depositing a photoresist material to form a photoresist layer.  
     
     
         8 . The method of  claim 1 , wherein the polishing rate of the glue/barrier layer above the dielectric layer is the same in all places.  
     
     
         9 . A method of planarization, comprising the steps of: 
 forming a patterned metallic layer over a semiconductor substrate;    forming a first dielectric layer over the patterned metallic layer;    forming an etching stop layer over the first dielectric layer that exposes areas for forming via openings;    forming a second dielectric layer that has a plurality of shallow dummy patterns over the etching stop layer;    forming a photoresist layer over the second dielectric layer such that the photoresist layer exposes areas for forming a plurality of trench patterns while covering the shallow dummy patterns;    patterning the second dielectric layer using the photoresist layer as a mask until a portion of the etching stop layer is exposed, and then patterning the first dielectric layer using the etching stop layer as a mask until a portion of the metallic layer is exposed, ultimately forming trench patterns within the second dielectric layer and forming via openings within the first dielectric layer;    removing the photoresist layer;    forming a glue/barrier layer over the exposed surface of the first dielectric layer and the second dielectric layer;    forming a conductive layer over the glue/barrier layer such that the conductive material completely fills the via openings, the trenches and the shallow dummy patterns; and    performing a chemical-mechanical polishing operation to remove excess conductive layer and glue/barrier layer above the second dielectric layer, and at the same time removing the shallow dummy pattern to obtain a planarized surface.    
     
     
         10 . The method of  claim 9 , wherein the shallow dummy pattern has a depth of 300 Å-500 Å.  
     
     
         11 . The method of  claim 9 , wherein the shallow dummy pattern has line width very similar to the line width in the trench areas.  
     
     
         12 . The method of  claim 9 , wherein the shallow dummy pattern is formed in the low opening density areas.  
     
     
         13 . The method of  claim 9 , wherein the step of forming the glue/barrier layer includes depositing tantalum nitride.  
     
     
         14 . The method of  claim 9 , wherein the step of forming the conductive layer includes depositing copper.  
     
     
         15 . The method of  claim 9 , wherein the polishing rate of glue/barrier layer above the second dielectric layer is the same in all places.