Semiconductor chip for optoelectronics

Abstract

An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

We claim as our invention:  
     
         1 . An optoelectronic semiconductor chip comprising: 
 an active layer containing a photon-emitting zone, said active layer having a bonding side;    a carrier member to which said active layer is attached at said bonding side; and    said active layer having a recess having a cross-sectional area which decreases with increasing depth of said recess into said active layer proceeding from said bonding side.    
     
     
         2 . An optoelectronic semiconductor chip as claimed in  claim 1  wherein said recess is disposed in said active layer so that said recess interrupts said photonemitting zone.  
     
     
         3 . An optoelectronic semiconductor chip as claimed in  claim 1  wherein said active layer has a plurality of recesses each corresponding to said recess, and wherein said active layer has a connecting layer disposed at said bonding side, said connecting layer having a plurality of elevations formed by said plurality of recesses.  
     
     
         4 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said photon-emitting zone and said elevations are disposed relative to each other so that at least one trajectory of photons emitted by said photon-emitting zone proceeds from one of said elevations to a neighboring one of said elevations.  
     
     
         5 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said elevations are tapered toward said carrier member.  
     
     
         6 . An optoelectronic semiconductor chip as claimed in  claim 5  wherein said elevations each have concave lateral faces.  
     
     
         7 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said elevations each have a truncated pyramidal shape.  
     
     
         8 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said photon-emitting zone is disposed in a portion of said elevations neighboring said connecting layer.  
     
     
         9 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said connecting layer is transparent for photons emitted by said photon-emitting zone.  
     
     
         10 . An optoelectronic semiconductor chip as claimed in  claim 3  wherein said connecting layer is highly doped.  
     
     
         11 . An optoelectronic semiconductor chip as claimed in  claim 3  further comprising a reflective layer covering said elevations.  
     
     
         12 . An optoelectronic semiconductor chip as claimed in  claim 11  wherein said reflective layer comprises a metallization layer adjacent an insulating layer.  
     
     
         13 . An optoelectronic semiconductor chip as claimed in  claim 1  wherein said active layer has a thickness which is less than 50 μm.  
     
     
         14 . An optoelectronic semiconductor chip as claimed in  claim 1  wherein said active layer has a thickness of less than 30 μm.