Gas phase growth system, method of operating the system, and vaporizer for the system

Abstract

When the vaporizer 2 does not vaporize an organometallic complex Cu (hfac) TMVS, a stabilizer TMVS for the organometallic complex is fed into the gas area Av of the vaporizer 2 or the pipe 14 connected to the vaporizer 1 on the downstream side thereof in a gaseous state.

What is claimed is:  
     
         1 . A method of operating a gas phase growth system comprising: 
 a processing stage, in which an organometallic complex is vaporized by a vaporizer, and the vaporized organometallic complex is fed into a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber; and    a stabilizer feeding stage, in which a stabilizer for the organometallic complex is fed in a gaseous state into a gas area of the vaporizer or into the gas line, where the gas area is an area in which the organometallic complex has been vaporized and exists in a gaseous state during normal operation of the vaporizer, wherein the stabilizer feeding stage is executed when the vaporizer is not vaporizing the organometallic complex.    
     
     
         2 . The method according to  claim 1 , wherein the method further comprises a pre-purging stage, in which the reaction chamber and the gas line are purged, wherein the pre-purging stage is executed before the processing stage, and the stabilizer feeding stage is executed when the pre-purging stage is executing.  
     
     
         3 . The method according to  claim 1 , wherein the method further comprises a post-purging stage, in which the reaction chamber and the gas line are purged, wherein the post-purging stage is executed after the processing stage, and the stabilizer feeding stage is executed when the post-purging stage is executing.  
     
     
         4 . The method according to  claim 1 , wherein the organometallic complex is Cu (hfac) TMVS and the stabilizer is TMVS.  
     
     
         5 . A gas phase growth system comprising: 
 a reaction vessel defining a reaction chamber in which a substrate is processed;    a vaporizer that vaporizes an organometallic complex;    a gas line communicating the vaporizer with the reaction chamber to feed the vaporized organometallic complex into the reaction chamber; and    a stabilizer feeder that feeds a stabilizer for the organometallic complex in a gaseous state into a gas area of the vaporizer or into the gas line, where the gas area is an area in which organometallic complex has been vaporized and exists in a gaseous state during normal operation of the vaporizer.    
     
     
         6 . A vaporizer for vaporizing an organometallic complex to be fed into a reaction chamber of a gas phase growth system, said vaporizer comprising: 
 a body with a vaporizing chamber;    a first path through which the organometallic complex is fed into the vaporizing chamber; and    a second path through which a stabilizer for said organometallic complex is fed into a gas area of the body in a gaseous state, where the gas area is an area in which organometallic complex has been vaporized and exists in a gaseous state during normal operation of the vaporizer.    
     
     
         7 . The vaporizer according to  claim 6 , wherein the second path is opened at the gas area within the vaporizing chamber.