Thin-film magnetic head having magnetic resistance effect element

Abstract

According as the gap layer formed between the magnetoresistive effect element and the shielding layer becomes smaller along with the recent tendency toward a higher recording density, the electrode layer of the magnetoresistive effect element and the shielding layer have been electrically connected, and this has caused a deterioration of the reproduction property. An insulating layer is formed under an electrode layer of a magnetoresistive effect element interposed a lower gap layer therebetween. As a result, the distance between the electrode layer and the lower shielding layer becomes longer, thus permitting maintenance of a satisfactory electrical insulation.

What is claimed is:  
     
         1 . A thin-film magnetic head comprising a lower shielding layer and a lower gap layer formed thereon, a magnetresistive element comprising a multilayer film displaying magnetoresistive effect and formed on said lower gap layer and an electrode layer connected to said multilayer film, and an upper shielding layer formed on said magnetoresistive effect element interposed the upper gap layer therebetween; wherein an insulating layer is formed in addition to the lower gap layer between said electrode layer and the lower shielding layer.  
     
     
         2 . A thin-film magnetic head according to  claim 1 , wherein said insulating layer is arranged at least on the both sides of said multilayer film or a reproduction track width.  
     
     
         3 . A thin-film magnetic head according to  claim 1 , wherein said lower gap layer and the insulating layer have a total thickness of at least 700 Å.  
     
     
         4 . A thin-film magnetic head according to  claim 1 , wherein an insulating layer is formed on said lower shielding layer, and said electrode layer is formed on said insulating layer via the lower gap layer.  
     
     
         5 . A thin-film magnetic head according to  claim 4 , wherein a slant is formed on each of the sides of said insulating layer.  
     
     
         6 . A thin-film magnetic head according to  claim 5 , wherein said insulating layer is formed with one or more insulating materials selected from the group consisting of SiO 2 , Al 2 O 3 , Ta 2 O 5 , TiO, Ti 2 O 3 , Ti 3 O 5 , WO 3 , Si 3 N 4  and AlN.  
     
     
         7 . A thin-film magnetic head according to  claim 1 , wherein a recess is formed on the surface of said lower shielding layer, with an insulating layer formed in said recess, and said electrode layer is formed on said insulating layer interposed the lower gap layer therebetween.  
     
     
         8 . A thin-film magnetic head according to  claim 7 , wherein the surface of said lower shielding layer is flush with the surface of the insulating layer formed in the recess of said lower shielding layer.  
     
     
         9 . A thin-film magnetic head according to  claim 1 , wherein the insulating layer formed under said electrode layer is formed by exposing up to an ABS plane.  
     
     
         10 . A thin-film magnetic head comprising a lower shielding layer and a lower gap layer formed thereon, a magnetoresistive effect element comprising a multilayer film displaying a magnetoresistive effect and formed on said lower gap layer and an electrode layer connected to said multilayer film, and an upper shielding layer formed on said magnetoresistive effect element interposed the upper gap layer therebetween; wherein an insulating layer is formed in addition to the upper gap layer between said electrode layer and said upper shielding layer.  
     
     
         11 . A thin-film magnetic head according to  claim 10 , wherein said insulating layer is arranged at least on each of the both sides of the multilayer film or a reproducing track width.  
     
     
         12 . A thin-film magnetic head according to  claim 10 , wherein said lower gap layer and the insulating layer have a total thickness of at least 700 Å.  
     
     
         13 . A thin-film magnetic head according to  claim 10 , wherein an insulating layer is formed on said electrode layer interposed the upper gap layer therebetween.  
     
     
         14 . A thin-film magnetic head according to  claim 13 , wherein a slant is formed on each of the sides of said insulating layer.  
     
     
         15 . A thin-film magnetic head according to  claim 14 , wherein said insulating layer is formed with one or more insulating materials selected from the group consisting of SiO 2 , Al 2 O 3 , Ta 2 O 5 , TiO, Ti 2 O 3 , Ti 3 O 5 , WO 3 , Si 3 N 4  and AlN.  
     
     
         16 . A thin-film magnetic head according to  claim 10 , wherein an insulating layer is formed on said electrode layer, and further, an upper gap layer is formed on said insulating layer.  
     
     
         17 . A thin-film magnetic head according to  claim 10 , wherein the insulating layer formed on said electrode is formed by exposing up to an ABS plane.  
     
     
         18 . A thin-film magnetic head according to  claim 1 , wherein another insulating layer is formed in addition to the upper gap layer between said electrode layer and the upper shielding layer.  
     
     
         19 . A thin-film magnetic head according to  claim 10 , wherein another insulating layer is formed in addition to the lower gap layer between said electrode layer and the lower shielding layer.