US2002012609A1PendingUtilityA1

Solder composition for high temperature semiconductor device

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Assignee: INT RECTIFIER CORPPriority: Feb 24, 2000Filed: Feb 26, 2001Published: Jan 31, 2002
Est. expiryFeb 24, 2020(expired)· nominal 20-yr term from priority
Inventors:Peter R. Ewer
H10W 72/07336H10W 72/073H10W 72/353H10W 72/352H10W 72/325H10W 72/30H10W 90/736B23K 35/24B23K 35/0244B23K 35/26B23K 35/32C22C 11/06
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Claims

Abstract

A non-ceramic solder composition for coupling a semiconductor device to a conductive support, composed of a first amount of a solder component and a second amount of a filler component. The first and second amounts of the respective components are proportioned so that the solder composition has an overall coefficient of thermal expansion that is intermediate of the coefficients of thermal expansion of the semiconductor device and the conductive support.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A non-ceramic solder composition for coupling a semiconductor device to a conductive support, comprising: 
 a first amount of a solder component having a thermal expansion coefficient; and    a second amount of a filler component having a thermal expansion coefficient;    wherein the first amount and the second amount are proportioned so that said solder composition has an overall coefficient of thermal expansion intermediate of the coefficient of thermal expansion of the semiconductor device and the coefficient of thermal expansion of the conductive support.    
     
     
         2 . The non-ceramic solder composition of  claim 1 , wherein the solder component is a lead-tin alloy.  
     
     
         3 . The non-ceramic solder composition of  claim 1 , wherein the filler component is tungsten, molybdenum, carbon fiber particles or combinations thereof.  
     
     
         4 . The non-ceramic solder composition of  claim 1 , wherein the filler component has a maximum particle size which is less than 0.004 inches.  
     
     
         5 . The non-ceramic solder composition of  claim 1 , wherein the filler component ranges from 10% to 90% by weight of said solder composition.  
     
     
         6 . The non-ceramic solder composition of  claim 1 , wherein the filler component is 80% by weight of said solder composition.  
     
     
         7 . The non-ceramic solder composition of  claim 1 , wherein the conductive support is constructed from copper, lead or combinations thereof.  
     
     
         8 . The non-ceramic solder composition of  claim 1 , wherein the overall coefficient of thermal expansion ranges from 4.5×10 −6 /° C. to 17×10 −6 /° C.  
     
     
         9 . The non-ceramic solder composition of  claim 1 , wherein the overall coefficient of thermal expansion is 10×10 −6 /° C.  
     
     
         10 . The non-ceramic solder composition of  claim 1 , wherein the semiconductor device is a diode or an IGBT.  
     
     
         11 . The non-ceramic solder composition of  claim 1 , wherein the semiconductor device is a diode or a MOSFET.  
     
     
         12 . The non-ceramic solder composition of  claim 1 , wherein the semiconductor device is a diode or an IGBT.

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