US2002012604A1PendingUtilityA1

Thin film formation use sputtering target material, thin film formed using same, and optical recording medium

Priority: Oct 29, 1999Filed: May 10, 2000Published: Jan 31, 2002
Est. expiryOct 29, 2019(expired)· nominal 20-yr term from priority
C22C 5/08C23C 14/3414G11B 7/258G11B 7/26C22C 5/06C23C 14/14G11B 7/259
47
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Claims

Abstract

An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method of forming a thin film comprising the step of: 
 forming an AgPd alloy thin film using a sputtering target material, wherein the AgPd alloy thin film comprises Pd in an amount ranging from 0.5 to 4.9 atomic %.    
     
     
         2 . The method of  claim 1  wherein the alloy further comprises at least one of Cu or Cr in an amount ranging from 0.1 to 3.5 atomic %.  
     
     
         3 . A thin film comprising: 
 an AgPd alloy comprising Pd in an amount ranging from 0.5 to 4.9 atomic %.    
     
     
         4 . The thin film of  claim 3  further comprising at least one of Cu or Cr in an amount ranging from 0.1 to 3.5 atomic %.  
     
     
         5 . An optical recording medium comprising: 
 a thin film formed by using an AgPd alloy comprising Pd in an amount ranging from 0.5 to 4.9 atomic %.    
     
     
         6 . The optical recording medium of  claim 5  wherein the AgPd alloy further comprises at least one of Cu or Cr in an amount ranging from 0.1 to 3.5 atomic %.  
     
     
         7 . A method of forming a thin film comprising the step of: 
 forming an AgPdTi alloy thin film using a sputtering target material wherein the AgPdTi alloy comprises Pd in an amount ranging from 0.1 to 1.5 atomic % and Ti in an amount ranging from 0.1 to 2.9 atomic %.    
     
     
         8 . A thin film comprising: 
 an AgPdTi alloy comprising Pd in an amount ranging from 0.1 to 1.5 atomic % and Ti in an amount ranging from 0.1 to 2.9 atomic %.    
     
     
         9 . An optical recording medium comprising: 
 a thin film comprising an AgPdTi alloy comprising Pd in an amount ranging from 0.1 to 1.5 atomic % and Ti in an amount ranging from 0.1 to 2.9 atomic %.

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