Electrostatic chucks and electrostatically adsorbing structures

Abstract

An electrostatic chuck includes a substrate having a wafer-installing face and a back face on an opposite side of the wafer-installing face, an electrostatically chucking electrode buried in the substrate, and an insulating layer provided at the back face of the substrate, the substrate including a dielectric layer facing at least the wafer-installing face and surrounding the electrostatically chucking electrode, and said insulating layer including an insulating material having a volume resistivity larger than that of the dielectric layer.

What is claimed is:  
     
         1 . An electrostatic chuck comprising a substrate having a wafer-installing face and a back face on an opposite side of the wafer-installing face, an electrostatically chucking electrode buried in said substrate, and an insulating layer provided at the back face of the substrate, said substrate comprising a dielectric layer having at least said wafer-installing face and surrounding the electrostatically chucking electrode, and said insulating layer comprising an insulating material having a volume resistivity larger than that of the dielectric layer.  
     
     
         2 . The electrostatic chuck set forth in  claim 1 , wherein said electrostatically chucking electrode comprises at least two electrodes having different load potentials, respectively.  
     
     
         3 . The electrostatic chuck set forth in  claim 1 , which further comprises an electrically conductive member provided at the back face of the substrate and adapted to escape heat inputted from the wafer-installing face to the conductive member.  
     
     
         4 . The electrostatic chuck set forth in  claim 1 , wherein the electrostatically chucking electrode comprises a net or punched metal.  
     
     
         5 . The electrostatic chuck set forth in  claim 1 , wherein the electrostatically chucking electrode comprises molybdenum metal or a molybdenum alloy.  
     
     
         6 . An electrostatically adsorbing structure comprising an electrostatic chuck for adsorbing a wafer and an electrically conductive member joined to a back face of the electrostatic chuck, said electrostatic chuck comprising a substrate having a wafer-installing face and a back face on an opposite side of the wafer-installing face, an electrostatically chucking electrode buried in said substrate, said substrate comprising a dielectric layer having at least said wafer-installing face and surrounding the electrostatically chucking electrode, and an insulating layer comprising an insulating material having a volume resistivity larger than that of the dielectric layer, said insulating layer provided at the back faces of the substrate.  
     
     
         7 . The electrostatically adsorbing structure set forth in  claim 6 , wherein said electrostatically chucking electrode comprises at least two electrodes having different load potentials, respectively.  
     
     
         8 . The electrostatically adsorbing structure set forth in  claim 6 , wherein the electrostatically chucking electrode comprises a net or punched metal.  
     
     
         9 . The electrostatically adsorbing structure set forth in  claim 6 , wherein the electrostatically chucking electrode comprises molybdenum metal or a molybdenum alloy.  
     
     
         10 . The electrostatically adsorbing structure set forth in  claim 6 , wherein the electrically conductive member comprises a cooling member.