Push-in type semiconductor device including heat spreader

Abstract

A semiconductor chip has a semiconductor chip, a support electrode body bonded to one of the end portions of the semiconductor chip and supported by, and fixed to, a heat spreader at a support fixing portion thereof, a lead electrode body bonded to the other end portion of the semiconductor chip and an insulating/sealing member disposed at the bond portion between the semiconductor chip and the support electrode body and at the bond portion between the semiconductor chip and the lead electrode body. The support electrode body includes a portion having an outer diameter different from that of the support fixing portion at which the support electrode body is supported and fixed by the heat spreader.

We claim:  
     
         1 . A semiconductor device comprising: 
 a semiconductor chip;    a support electrode body bonded to one end portion of said semiconductor chip electrically by a bonding member;    a lead electrode body bonded to another end portion of said semiconductor chip electrically by a bonding member; and    an insulating member insulating and sealing both a bonded portion between said support electrode body and said semiconductor chip and a bonded portion between said lead electrode body and said semiconductor chip,    wherein said support electrode body comprises a groove portion disposed in a periphery of a surface area bonded to said semiconductor chip and a side wall disposed in a periphery of said groove portion and having an apex disposed at a position higher than a position of said surface area bonded to said semiconductor chip, and wherein an inner diameter of a lower portion of said side wall is formed larger than an inner diameter of an upper portion of said side wall.    
     
     
         2 . A method of fabricating a semiconductor device provided with a semiconductor chip, a support electrode body and a lead electrode body comprising steps of: 
 fabricating said support electrode body having a first region with a first outer diameter and a second region disposed adjacently to said first region with a second outer diameter;    bonding one end surface of said second region with a surface of said semiconductor chip by a first bonding member; and    bonding another surface of said semiconductor chip with said lead electrode body by a second bonding member.    
     
     
         3 . A method of fabricating a semiconductor device provided with a semiconductor chip, a support electrode body and a lead electrode body comprising steps of: 
 bonding a surface of said semiconductor chip with one end surface of second region of said support electrode body having a first region with a first outer diameter and said second region disposed adjacently to said first region with a second outer diameter, by a first bonding member; and    bonding another surface of said semiconductor chip with said lead electrode by a second bonding member.