Anti-reflective coating compositions comprising polymerized aminoplasts

Abstract

Improved anti-reflective coating compositions for use in integrated circuit manufacturing processes and methods of forming these compositions are provided. Broadly, the compositions are formed by heating a solution comprising a compound including specific compounds (e.g., alkoxy alkyl melamines, alkoxy alkyl benzoguanamines) under acidic conditions so as to polymerize the compounds and form polymers having an average molecular weight of at least about 1,000 Daltons. The monomers of the resulting polymers are joined to one another via linkage groups (e.g., —CH 2 —, —CH 2 —O—CH 2 —) which are bonded to nitrogen atoms on the respective monomers. The polymerized compound is mixed with a solvent and applied to a substrate surface after which it is baked to form an anti-reflective layer. The resulting layer has high k values, improved etch rates, and can be formulated for both conformal and planar applications.

We claim:  
     
         1 . In an anti-reflective composition for use in the manufacture of integrated circuits, the composition comprising a polymer dissolved in a solvent system, the improvement being that the composition, after curing, has an etch selectivity to resist of at least about 1.3 when the etchant is HBr/O 2  and the resist is a poly(hydroxystyrene) resist.  
     
     
         2 . The composition of  claim 1 , wherein said polymer comprises recurring monomers derived from a compound having the formula:  
       
         
           
           
               
               
           
         
       
       wherein each X is individually selected from the group consisting of NR 2  and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups.  
     
     
         3 . The composition of  claim 2 , wherein said polymer has an average molecular weight of at least about 1000 Daltons.  
     
     
         4 . The composition of  claim 1 , wherein said compound is selected from the group consisting of benzoguanamine and melamine.  
     
     
         5 . The composition of  claim 1 , wherein said etch selectivity to resist is at least about 1.5.  
     
     
         6 . In an anti-reflective composition for use in the manufacture of integrated circuits, the composition comprising a polymer binder dissolved in a solvent system, the improvement being that the composition, after curing, has an etch selectivity to resist of at least about 2.0 when the etchant is CF 4  and the resist is a poly(hydroxystyrene) resist.  
     
     
         7 . The composition of  claim 6 , wherein said polymer comprises recurring monomers derived from a compound having the formula:  
       
         
           
           
               
               
           
         
       
       wherein each X is individually selected from the group consisting of NR 2  and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups.  
     
     
         8 . The composition of  claim 7 , wherein said polymer has an average molecular weight of at least about 1000 Daltons.  
     
     
         9 . The composition of  claim 7 , wherein said compound is selected from the group consisting of benzoguanamine and melamine.  
     
     
         10 . The composition of  claim 6 , wherein said etch selectivity to resist is at least about 2.5.  
     
     
         11 . The combination of a substrate having a surface and a cured anti-reflective coating adjacent said substrate surface, said cured anti-reflective coating having an etch selectivity to resist of at least about 1.3 when the etchant is HBr/O 2  and the resist is a poly(hydroxystyrene) resist.  
     
     
         12 . The combination of  claim 11 , wherein said cured anti-reflective coating is formed from a composition comprising a polymer which comprises recurring monomers derived from a compound having the formula:  
       
         
           
           
               
               
           
         
       
       wherein each X is individually selected from the group consisting of NR 2  and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups.  
     
     
         13 . The combination of  claim 12 , wherein said polymer has an average molecular weight of at least about 1000 Daltons.  
     
     
         14 . The combination of  claim 12 , wherein said compound is selected from the group consisting of benzoguanamine and melamine.  
     
     
         15 . The combination of  claim 11 , wherein said etch selectivity to resist is at least about 1.5.  
     
     
         16 . The combination of a substrate having a surface and a cured anti-reflective coating adjacent said substrate surface, said cured anti-reflective coating having an etch selectivity to resist of at least about 2.0 when the etchant is CF 4  and the resist is a poly(hydroxystyrene) resist.  
     
     
         17 . The combination of  claim 16 , wherein said cured anti-reflective coating is formed from a composition comprising a polymer which comprises recurring monomers derived from a compound having the formula:  
       
         
           
           
               
               
           
         
       
       wherein each X is individually selected from the group consisting of NR 2  and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups.  
     
     
         18 . The combination of  claim 17 , wherein said polymer has an average molecular weight of at least about 1000 Daltons.  
     
     
         19 . The combination of  claim 17 , wherein said compound is selected from the group consisting of benzoguanamine and melamine.  
     
     
         20 . The combination of  claim 16 , wherein said etch selectivity to resist is at least about 2.5.