Photosensitive resin composition

Abstract

There are disclosed a photosensitive resin composition which comprises (A) a polyamic acid having recurring units represented by the formula (I): wherein R 1 represents represents a divalent organic group, and (B) an acryl compound having an amino group, and also a photosensitive resin composition for an i-line stepper which further comprises a photoinitiator in addition to the photosensitive resin composition.

What is claimed is:  
     
         1 . A semiconductor device, comprising: 
 a semiconductor substrate; and    a polyimide film overlying the semiconductor substrate, wherein said polyimide film includes a polyimide material formed from an oxydiphthalic acid or acid anhydride thereof as a reactant.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein said polyimide material is formed by forming a polyimide precursor formed by reacting the oxydiphthalic acid or acid anhydride thereof with a diamine, and then heating the polyimide precursor.  
     
     
         3 . The semiconductor device according to  claim 2 , wherein said diamine is a diaminopolysiloxane.  
     
     
         4 . The semiconductor device according to  claim 1 , wherein the semiconductor substrate includes a large-scale integrated circuit.  
     
     
         5 . The semiconductor device according to  claim 1 , wherein the polyimide film is a buffer coating film of the semiconductor device.  
     
     
         6 . A semiconductor device, comprising: 
 a semiconductor substrate; and    a polyimide film overlying the semiconductor substrate, the polyimide film being produced by coating a composition containing a polyimide precursor overlying the semiconductor substrate, thereby forming a composition coating, forming a pattern in the composition coating using an i-line stepper, thereby forming a patterned coating, and heating the patterned coating to form polyimide from the polyimide precursor, wherein the polyimide precursor is formed from an oxydiphthalic acid or acid anhydride thereof as a reactant.    
     
     
         7 . The semiconductor device according to  claim 6 , wherein the polyimide precursor is a polyamic acid.  
     
     
         8 . The semiconductor device according to  claim 7 , wherein the polyamic acid is a reaction product of the oxydiphthalic acid or acid anhydride thereof and diamine compound.  
     
     
         9 . The semiconductor device according to  claim 8 , wherein said diamine compound is a diaminopolysiloxane.  
     
     
         10 . A photosensitive resin composition which comprises (1) a polyimide precursor, formed from an oxydiphthalic acid or acid anhydride thereof as a reactant, a 20 μm film thickness of said polyimide precursor having a transmittance, at 365 nm, of at least 40%; and (2) a polymerization initiator.  
     
     
         11 . The photosensitive resin composition according to  claim 10 , wherein the polyimide precursor is formed by reacting said oxydiphthalic acid or acid anhydride thereof with diamine.  
     
     
         12 . The photosensitive resin composition according to  claim 11 , wherein said diamine is a diaminopolysiloxane.  
     
     
         13 . The photosensitive resin composition according to  claim 10 , wherein said transmittance is in a range of 40%-68%.  
     
     
         14 . The photosensitive resin composition according to  claim 13 , wherein the composition further includes an acryl compound having an amino group.  
     
     
         15 . A polyimide precursor which is a reaction product of an oxydiphthalic acid or acid anhydride thereof and diaminopolysiloxane compound.  
     
     
         16 . The polyimide precursor according to  claim 15 , wherein the oxydiphthalic acid or acid anhydride thereof and the diaminopolysiloxane compound are reacted in molar ratio of acid and acid anhydride, to diaminopolysiloxane of 0.8-1.2 to 1.0.  
     
     
         17 . The polyimide precursor according to  claim 15 , the polyimide precursor being a polyamic acid.  
     
     
         18 . The polyamic acid according to  claim 17 , having a number average molecular weight in a range of 3,000 to 200,000.  
     
     
         19 . A polyimide formed by heating the polyamic acid of claim  17 .