Film forming apparatus and method for producing tungsten nitride film

Abstract

A technique for forming a tungsten nitride film having a high growth speed without causing any dusting. The film forming apparatus 2 according to the present invention has a constitution where an adhesion preventive container 8 is placed in a reactor 11 and a object on which a film is to be formed 20 is located in the adhesion preventive container 8 . In a first gas inlet equipment, a first feedstock gas is jetted from a shower nozzle 12 . In a second gas inlet equipment, a second feedstock gas is jetted around the object on which a film is to be formed 20 between the shower nozzle 12 and the material 20 . Owing to this constitution, the first feedstock gas and the second feedstock gas attain the surface of the object on which a film is to be formed without being mixed together, which enables the efficient performance of the reaction. Since the adhesion preventive container is heated to 150 to 250° C., neither WF 6 .4NH 3 nor W x N is formed and thus no dusting is caused.

What is claimed is:  
     
         1 . A film forming apparatus comprising: 
 an evacuatable reactor;    an adhesion preventive container placed in said reactor;    a holder whereby a material on which the film is to be formed is located in said adhesion preventive container;    a first gas inlet equipment which faces to said holder and constructed so that it can jet a gas into said adhesion preventive container; and    a second gas inlet equipment which is constructed so that it can jet a gas between said first gas inlet equipment and said holder.    
     
     
         2 . The film forming apparatus as claimed in  claim 1 , which is constructed so that, in said adhesion preventive container, at least the part around said material on which the film is to be formed is maintained at a temperature of 150 to 300° C.  
     
     
         3 . The film forming apparatus as claimed in  claim 1 , wherein said first gas inlet equipment comprises a shower nozzle provided with a number of gas jet orifices formed on the almost same plane.  
     
     
         4 . The film forming apparatus as claimed in  claim 2 , wherein said f irst gas inlet equipment comprises a shower nozzle provided with a number of gas jet orifices formed on the almost same plane.  
     
     
         5 . The film forming apparatus as claimed in  claim 1 , wherein said second gas inlet equipment comprises a nozzle made of a hollow pipe shaped into a ring and a number of gas jet orifices are formed in said hollow pipe.  
     
     
         6 . The film forming apparatus as claimed in  claim 2 , wherein said second gas inlet equipment comprises a nozzle made of a hollow pipe shaped into a ring and a number of gas jet orifices are formed in said hollow pipe.  
     
     
         7 . The film forming apparatus as claimed in  claim 3 , wherein said second gas inlet equipment comprises a nozzle made of a hollow pipe shaped into a ring and a number of gas jet orifices are formed in said hollow pipe.  
     
     
         8 . The film forming apparatus as claimed in  claim 4 , wherein said second gas inlet equipment comprises a nozzle made of a hollow pipe shaped into a ring and a number of gas jet orifices are formed in said hollow pipe.  
     
     
         9 . A method for producing a tungsten f ilm which comprises jetting a first feedstock gas comprising a nitrogen atom in its chemical structure and a second feedstock gas comprising a tungsten atom in its chemical structure into a reactor and reacting said first feedstock gas with said second feedstock gas so as to form a tungsten nitride film on the surface of a material on which the film is to be formed; 
 wherein the distance between the position from which said first feedstock gas is jetted and the surface of said material on which the film is to be formed is different from the distance between the position from which said second feedstock gas is jetted and the surface of said material on which the film is to be formed.    
     
     
         10 . The method for producing a tungsten film as claimed in  claim 9  which comprises: 
 providing an adhesion preventive container in said reactor and placing said object on which a film is to be formed in the adhesion preventive container;  
 heating, in said adhesion preventive container, at least the part around said material on which the film is to be formed to a temperature of 150 to 250° C.; and  
 jetting said first feedstock gas and second feedstock gas into said adhesion preventive container.  
 
     
     
         11 . The method for producing a tungsten film as claimed in  claim 9 , wherein one of said first feedstock gas and second feedstock gas is jetted downward in the vertical direction toward the surface of said object on which a film is to be formed.  
     
     
         12 . The method for producing a tungsten film as claimed in  claim 10 , wherein one of said first feedstock gas and second feedstock gas is jetted downward in the vertical direction toward the surface of said object onwhicha film is to be formed.  
     
     
         13 . The method for producing a tungsten film as claimed in  claim 9 , wherein, between said first feedstock gas and second feedstock gas, the one gas jetted from the lower position is jetted sideways toward center of said object on which a film is to be formed.  
     
     
         14 . The method for producing a tungsten film as claimed in  claim 10 , wherein, between said first feedstock gas and second feedstock gas, the one gas jetted from the lower position is jetted sideways toward center of said object on which a film is to be formed.  
     
     
         15 . The method for producing a tungsten film as claimed in  claim 11 , wherein, between said first feedstock gas and second feedstock gas, the one gas jetted from the lower position is jetted sideways toward center of said object on which a film is to be formed.  
     
     
         16 . The method for producing a tungsten film as claimed in  claim 12 , wherein, between said first feedstock gas and second feedstock gas, the one gas jetted from the lower position is jetted sideways toward center of said object on which a film is to be formed.