Process for preparing an electrode substrate and process for preparing a recording medium

Abstract

An electrode substrate and a recording medium having a smooth surface with surface unevenness of 1 nm or less and a size of 1 μm/ or more are disclosed. An electrode substrate and a recording medium having a concave-shaped groove for tracking on the surface, which groove has a depth which can detect of the tunnel current from the bottom thereof by a probe electrode for scanning the surface are also disclosed. Information processing devices equipped with the smooth recording medium, an electroconductive probe arranged approximate to the recording medium and a pulse voltage application circuit for recording are also disclosed.

What is claimed is:  
     
         1 . An electrode substrate, having a smooth surface with surface unevenness of 1 nm or less and a size of 1 μm/ or more.  
     
     
         2 . An electrode substrate according to  claim 1 , wherein the size is 10 μm/ .  
     
     
         3 . A process for preparing an electrode substrate, comprising the step of forming an electrode layer containing a conductive material on a smooth matrix with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and the step of separating said electrode layer from the matrix.  
     
     
         4 . A process for preparing an electrode substrate according to  claim 3 , wherein a crystalline substrate with its main surface being cleaved is used as the matrix.  
     
     
         5 . A process for preparing an electrode substrate according to  claim 3 , wherein a glass with main surface formed by melting is used as the matrix.  
     
     
         6 . A process for preparing an electrode substrate according to  claim 3 , wherein the conductive material is a noble metal or an alloy of noble metals.  
     
     
         7 . A recording medium, having a smooth surface with surface unevenness of 1 nm or less and a size of 1 μm/ or more.  
     
     
         8 . An electrode substrate according to  claim 7 , wherein the size is 10 μm/ .  
     
     
         9 . A recording medium according to  claim 7 , having a recording layer on the electrode substrate.  
     
     
         10 . A recording medium according to  claim 7 , having the electrical memory effect.  
     
     
         11 . A recording medium according to  claim 8 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         12 . A recording medium according to  claim 8 , wherein the recording layer has a thickness in the range of 5 to 300 Å.  
     
     
         13 . A process for preparing a recording medium, comprising the step of forming an electrode layer containing a conductive material on a smooth surface matrix with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, the step of separating said electrode layer from the matrix and the step of forming a recording layer on said electrode layer.  
     
     
         14 . A process for preparing a recording medium according to  claim 13 , wherein a crystal substrate with its main surface being cleaved is used as the matrix.  
     
     
         15 . A process for preparing a recording medium according to  claim 13 , wherein a glass with its main surface being formed by melting is used as the matrix.  
     
     
         16 . A process for preparing a recording medium according to  claim 13 , wherein the conductive material is a noble metal of an alloy of noble metals.  
     
     
         17 . A process for preparing a recording medium according to  claim 13 , wherein the recording layer is formed from an organic compound according to the Langmuir-Blodgett's method (LB method).  
     
     
         18 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, an electroconductive probe arranged approximate to said recording medium and a pulse voltage application circuit for recording.  
     
     
         19 . An information processing device according to  claim 18 , wherein the recording medium has a recording layer on the electrode substrate.  
     
     
         20 . An information processing device according to  claim 18 , wherein the recording medium has the electrical memory effect.  
     
     
         21 . An information processing device according to  claim 19 , wherein the recording layer contains a monomolecular layer or a monomolecular built-up film of an organic compound.  
     
     
         22 . An information processing device according to  claim 19 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         23 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, an electroconductive probe arranged approximate to said recording medium, a pulse voltage application circuit for recording and a bias voltage application circuit for reproduction.  
     
     
         24 . An information processing device according to  claim 23 , wherein the recording medium has a recording layer on the electrode substrate.  
     
     
         25 . An information processing device according to  claim 23 , wherein the recording medium has the electrical memory effect.  
     
     
         26 . An information processing device according to  claim 24 , wherein the recording layer contains a monomolecular layer or a monomolecular built-up film of an organic compound.  
     
     
         27 . An information processing device according to  claim 24 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         28 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, and comprising an information recorded thereon, an electroconductive probe arranged approximate to said recording medium and a bias voltage application circuit for reproduction.  
     
     
         29 . An information processing device according to  claim 28 , wherein the recording medium has a recording layer on the electrode substrate.  
     
     
         30 . An information processing device according to  claim 28 , wherein the recording medium has the electrical memory effect.  
     
     
         31 . An information processing device according to  claim 29 , wherein the recording layer contains a monomolecular layer or a monomolecular built-up film of an organic compound.  
     
     
         32 . An information processing device according to  claim 29 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         33 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate and with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, and performing recording of an information by applying a pulse voltage between the electrode substrate and the electroconductive probe.  
     
     
         34 . An information processing method according to  claim 33 , wherein the recording medium has the electrical memory effect.  
     
     
         35 . An information processing method according to  claim 33 , wherein the pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         36 . An information processing method according to  claim 33 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         37 . An information processing method according to  claim 33 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         38 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate and with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, and performing recording of an information by applying a pulse voltage between the electrode substrate and the electroconductive probe and performing reproducing of the recorded information by applying a bias voltage.  
     
     
         39 . An information processing method according to  claim 38 , wherein the recording medium has the electrical memory effect.  
     
     
         40 . An information processing method according to  claim 38 , wherein the pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         41 . An information processing method according to  claim 38 , wherein the bias voltage is a voltage not exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         42 . An information processing method according to  claim 38 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         43 . An information processing method according to  claim 38 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         44 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate and with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, performing recording of an information by applying a first pulse voltage between the electrode substrate and the electroconductive probe, performing reproducing of the recorded information by applying a bias voltage and performing erasing of the recorded information by further applying a second pulse voltage.  
     
     
         45 . An information processing method according to  claim 44 , wherein the recording medium has the electrical memory effect.  
     
     
         46 . An information processing method according to  claim 44 , wherein the first pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         47 . An information processing method according to  claim 44 , wherein the bias voltage is a voltage not exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         48 . An information processing method according to  claim 44 , wherein the second pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         49 . An information processing method according to  claim 44 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         50 . An information processing method according to  claim 44 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         51 . An embedded electrode, which is an electrode embedded in a supporting substrate, a part of the surface of said electrode being exposed, and the difference of height of unevenness of said exposed surface being 1 nm or less, and the exposed surface and the surface of the supporting substrate being the same plane.  
     
     
         52 . A process for preparing an embedded electrode, which comprises forming a metal thin film and an insulating thin film on a smooth matrix, further backing it with a supporting substrate and then peeling off said smooth matrix to form a smooth surface electrode with the smooth surface of said smooth matrix formed thereon.  
     
     
         53 . A process for preparing a peeled film, which comprises forming a metal film on a smooth matrix and peeling off said metal film to obtain a film with smooth surface, or further forming a metal film on said metal film surface after peeled off and peeling off said metal film to form a metal film with smooth surface, wherein the film to be peeled formed on the matrix or the surface of the metal film is formed by use of the Langmuir-Blodgett's method.  
     
     
         54 . An electrode substrate, having a smooth surface with surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking.  
     
     
         55 . An electrode substrate according to  claim 54 , wherein the size is 10 μm/ .  
     
     
         56 . An electrode substrate according to  claim 54 , wherein the groove has a concave or convex shape.  
     
     
         57 . A process for preparing an electrode substrate, comprising the step of providing a smooth matrix with a surface unevenness of 1 nm and a size of 1 μm/ or more, having a concave or convex shape the step of forming an electrode layer containing a conductive material on said matrix and the step of separating said electrode layer from the matrix.  
     
     
         58 . A process for preparing an electrode substrate according to  claim 57 , wherein a crystalline substrate with its main surface being cleaved is used as the matrix.  
     
     
         59 . A process for preparing an electrode substrate according to  claim 57 , wherein a glass with main surface being formed by melting is used as the matrix.  
     
     
         60 . A process for preparing an electrode substrate according to  claim 57 , wherein the conductive material is a noble metal or an alloy of noble metals.  
     
     
         61 . A recording medium, having a smooth surface with surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking.  
     
     
         62 . A electrode substrate according to  claim 61 , wherein the size is 10 μm/ .  
     
     
         63 . An recording medium according to  claim 61 , wherein said recording medium has a recording layer on the electrode substrate.  
     
     
         64 . A recording medium according to  claim 61 , having the electrical memory effect.  
     
     
         65 . A recording medium according to  claim 63 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         66 . A recording medium according to  claim 63 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         67 . A process for preparing a recording medium, comprising the step of providing a smooth matrix with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, having a concave or convex shape the step of forming an electrode layer containing a conductive material on said matrix, the step of separating said electrode layer from the matrix and the step of forming a recording layer on said electrode layer.  
     
     
         68 . A process for preparing a recording medium according to  claim 67 , wherein a crystalline substrate with its main surface being cleaved is used as the matrix.  
     
     
         69 . A process for preparing a recording medium according to  claim 67 , wherein a glass with its main surface being formed by melting is used as the matrix.  
     
     
         70 . A process for preparing a recording medium according to  claim 67 , wherein the conductive material is a noble metal of an alloy of noble metals.  
     
     
         71 . A process for preparing a recording medium according to  claim 67 , wherein the recording layer is formed from an organic compound according to the Langmuir-Blodgett's method (LB method).  
     
     
         72 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking, an electroconductive probe arranged approximate to said recording medium and a pulse voltage application circuit for recording.  
     
     
         73 . An information processing device according to  claim 72 , said recording medium has a recording layer on the electrode substrate.  
     
     
         74 . An information processing device according to  claim 72 , wherein the recording medium has the electrical memory effect.  
     
     
         75 . An information processing device according to  claim 73 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         76 . An information processing device according to  claim 73 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         77 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking, an electroconductive probe arranged approximate to said recording medium, a pulse voltage application circuit for recording and a bias voltage application circuit for reproduction.  
     
     
         78 . An information processing device according to  claim 77 , wherein said recording medium has a recording layer on the electrode substrate.  
     
     
         79 . An information processing device according to  claim 77 , wherein the recording medium has the electrical memory effect.  
     
     
         80 . An information processing device according to  claim 78 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         81 . An information processing device according to  claim 78 , wherein the recording layer has a thickness in the range of 5 Å to 300 Å.  
     
     
         82 . An information processing device, equipped with a smooth recording medium with a surface unevenness of 1 nm or less and a size of 1 μm/ or more, and a groove tracking, comprising an information recorded thereon, an electroconductive probe arranged approximate to said recording medium and a bias voltage application circuit for reproducing.  
     
     
         83 . An information processing device according to  claim 82 , wherein the recording medium has a recording layer on the electrode substrate.  
     
     
         84 . An information processing device according to  claim 82 , wherein the recording medium has the electrical memory effect.  
     
     
         85 . An information processing device according to  claim 83 , wherein the recording layer contains a monomolecular film, or a monomolecular built-up film of an organic compound.  
     
     
         86 . An information processing device according to  claim 83 , wherein the recording layer has a thickness in the range of 5 Å300 Å.  
     
     
         87 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate and with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking, and performing recording of an information by applying a pulse voltage between the electrode substrate and the electroconductive probe.  
     
     
         88 . An information processing device according to  claim 87 , wherein the recording medium has the electrical memory effect.  
     
     
         89 . An information processing method according to  claim 87 , wherein the pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         90 . An information processing device according to  claim 87 , wherein the recording layer contains a monomolecular film, or a monomolecular built-up film of an organic compound.  
     
     
         91 . An information processing device according to  claim 87 , wherein the recording layer has a thickness in the range of 5 Å to 300 Å.  
     
     
         92 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking, performing recording of an information by applying a pulse voltage between the electrode substrate and the electroconductive probe and performing reproducing of the recorded information by applying a bias voltage.  
     
     
         93 . An information processing method according to  claim 92 , wherein the recording medium has the electrical memory effect.  
     
     
         94 . An information processing method according to  claim 92 , wherein the pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         95 . An information processing method according to  claim 92 , wherein the bias voltage is a voltage not exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         96 . An information processing method according to  claim 92 , wherein the recording layer contains a monomolecular film, or a monomolecular built-up film of an organic compound.  
     
     
         97 . An information processing method according to  claim 92 , wherein the recording layer has a thickness in the range of 5 Å to 300 Å.  
     
     
         98 . An information processing method which comprises approaching an electroconductive probe to a smooth recording medium having a recording layer on an electrode substrate with a surface unevenness of 1 nm or less and a size of 1 μm/ or more and a groove for tracking, performing recording of an information by applying a first pulse voltage between the electrode substrate and the electroconductive probe, performing reproducing of the recorded information by applying a bias voltage and performing erasing of the recorded information by further applying a second pulse voltage.  
     
     
         99 . An information processing method according to  claim 98 , wherein the recording medium has the electrical memory effect.  
     
     
         100 . An information processing method according to  claim 98 , wherein the first pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         101 . An information processing method according to  claim 98 , wherein the bias voltage is a voltage not exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         102 . An information processing method according to  claim 98 , wherein the second pulse voltage is a voltage exceeding the threshold value at which the electroconductivity of the recording medium changes.  
     
     
         103 . An information processing method according to  claim 98 , wherein the recording layer contains a monomolecular film, or a monomolecular built-up film of an organic compound.  
     
     
         104 . An information processing method according to  claim 98 , wherein the recording layer has a thickness in the range of 5 Å to 300 Å.  
     
     
         105 . An electrode substrate having a concave-shaped groove for tracking on the surface, said groove having a depth which can detect of the tunnel current from the bottom of said groove by a probe electrode for scanning the surface.  
     
     
         106 . An electrode substrate according to  claim 105 , wherein said groove has a depth of 20 Å or less.  
     
     
         107 . An electrode substrate according to  claim 105 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         108 . An electrode substrate according to  claim 105 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         109 . A recording medium having a concave-shaped track groove on the surface, said groove for tracking having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface.  
     
     
         110 . A recording medium according to  claim 109 , wherein said recording medium comprises a recording layer provided on the electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         111 . A recording medium according to  claim 109 , wherein said groove has a depth of 20 Å or less.  
     
     
         112 . A recording medium according to  claim 109 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         113 . A recording medium according to  claim 109 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         114 . A recording medium according to  claim 109 , having the electrical memory effect.  
     
     
         115 . A recording medium according to  claim 110 , wherein the recording layer contains a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         116 . A recording medium according to  claim 110 , wherein the recording layer has a thickness in the range of 4 Å to 20 Å.  
     
     
         117 . An information processing device, comprising a recording medium having a concave-shaped groove for tracking on the surface, said groove having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, a probe electrode arranged approximate to said recording medium and a pulse voltage application circuit for recording.  
     
     
         118 . An information processing device according to  claim 117 , wherein said recording medium comprises a recording layer provided on the electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         119 . An information processing device according to  claim 117 , wherein said groove has a depth of 20 Å or less.  
     
     
         120 . An information processing device according to  claim 117 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         121 . An information processing device according to  claim 117 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         122 . An information processing device according to  claim 117 , where the recording medium has the electrical memory effect.  
     
     
         123 . An information processing device according to  claim 118 , wherein the recording layer comprises a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         124 . An information process device according to  claim 118 , wherein the recording layer has a thickness in the range of 4 Å to 20 Å.  
     
     
         125 . An information processing device, comprising a recording medium having a concave-shaped groove for tracking on the surface, said groove having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, a probe electrode arranged approximate to said recording medium and a pulse voltage application circuit for recording and a bias voltage application circuit for reproducing.  
     
     
         126 . An information processing device according to  claim 125 , wherein said recording medium comprises a recording layer provided on the electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         127 . An information processing device according to  claim 125 , wherein said groove has a depth of 20 Å or less.  
     
     
         128 . An information processing device according to  claim 125 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         129 . An information processing device according to  claim 125 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         130 . An information processing device according to  claim 125 , wherein the recording medium has the electrical memory effect.  
     
     
         131 . An information processing device according to  claim 125 , wherein the recording layer comprises a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         132 . Information processing device according to  claim 125 , wherein the recording layer has a thickness in the range of 4 Å to 20 Å.  
     
     
         133 . An information processing device, comprising a recording medium having a concave-shaped groove for tracking on the surface, said groove having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, a probe electrode arranged approximate to said recording medium a pulse voltage application circuit for recording/erasing and a bias voltage application circuit for reproducing.  
     
     
         134 . An information processing device according to  claim 133 , wherein said recording medium comprises a recording layer provided on the electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         135 . An information processing device according to  claim 133 , wherein said groove has a depth of 20 Å or less.  
     
     
         136 . An information processing device according to  claim 133 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         137 . An information processing device according to  claim 133 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         138 . An information processing device according to  claim 133 , wherein the recording medium has the electrical memory effect.  
     
     
         139 . An information processing device according to  claim 134 , wherein the recording layer comprises a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         140 . An information processing device to  claim 134 , wherein the recording layer has a thickness in the range of 4 Å to 20 Å.  
     
     
         141 . An information processing device, comprising a recording medium having a concave-shaped groove for tracking on the surface, said groove having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface and also having an information recorded thereon, a probe electrode arranged approximate to said recording medium, a bias voltage application circuit for reproducing.  
     
     
         142 . An information processing device according to  claim 141 , wherein said recording medium comprises a recording layer provided on the electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         143 . An information processing device according to  claim 141 , wherein said groove has a depth of 20 Å or less.  
     
     
         144 . An information processing device according to  claim 141 , having 1 μm/ or more of a surface with unevenness of 1 nm or less.  
     
     
         145 . An information processing device according to  claim 141 , having 10 μm/ of a surface with unevenness of 1 nm or less.  
     
     
         146 . An information processing device according to  claim 141 , wherein the recording medium has the electrical memory effect.  
     
     
         147 . An information processing device according to  claim 142 , wherein the recording layer comprises a monomolecular film or a monomolecular built-up film of an organic compound.  
     
     
         148 . An information processing device according to  claim 142 , wherein the recording layer has a thickness in the range of 4 Å to 20 Å.  
     
     
         149 . An information processing method, which comprises approximating a probe electrode to a recording medium comprising a recording layer provided on an electrode substrate having a concave-shaped groove for tracking on the surface, said groove on the recording surface having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, applying a bias voltage between the probe electrode and the electrode surface to distinguish the recording surface and the track portion by the tunnel current, and applying a pulse voltage between the probe electrode and the electrode substrate to perform recording of an information on the recording surface.  
     
     
         150 . An information processing method, which comprises approximating a probe electrode to a recording medium comprising a recording layer provided on an electrode substrate having a concave-shaped groove for tracking on the surface, said groove on the recording surface having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, applying a bias voltage between the probe electrode and the electrode surface to distinguish the recording surface and the track portion by the tunnel current, applying a pulse voltage between the probe electrode and the electrode substrate to perform recording of an information on the recording surface, and applying a bias voltage between the probe electrode and the electrode substrate to reproduce the recording of the information.  
     
     
         151 . An information processing method, which comprises approximating a probe electrode to a recording medium comprising a recording layer provided on an electrode substrate having a concave-shaped groove for tracking on the surface, said groove on the recording surface having a depth which can detect the tunnel current from the bottom of said groove by a probe electrode for scanning the surface, applying a bias voltage between the probe electrode and the electrode surface to distinguish the recording surface and the track portion by the tunnel current, applying a pulse voltage between the probe electrode and the electrode substrate to perform recording of an information on the recording surface, applying a bias voltage between the probe electrode and the electrode substrate to reproduce the recording of the information, and applying a pulse voltage between the probe electrode and the electrode substrate to perform erasing of the recorded information.  
     
     
         152 . A process for preparing an electrode substrate, comprising the step of forming an organic thin film on a substrate having 1 μm/ or more of a surface with unevenness of 1 nm or less, the step of irradiating an electron beam on said thin film followed by developing to form a pattern of said thin film, the step of forming an electrode layer comprising an electroconductive material on the substrate having said pattern, and the step of separating said substrate from the electrode layer, thereby obtaining an electrode substrate having a concave-shaped groove for tracking on the surface.  
     
     
         153 . A process for preparing an electrode substrate according to  claim 152 , wherein the organic thin film is formed according to the Langmuir-Blodgett's method.  
     
     
         154 . A process for preparing a recording medium, comprising the step of forming an organic thin film on a substrate having 1 μm/ or more of a surface with unevenness of 1 nm or less, the step of irradiating an electron beam on said thin film followed by developing to form a pattern of said thin film, the step of forming an electrode layer comprising an electroconductive material on the substrate having said pattern, the step of separating said substrate from the electrode layer, and the step of forming a recording layer on the surface of the electrode layer faced to said substrate, thereby obtaining a recording medium having a concave-shaped groove for tracking on the surface.  
     
     
         155 . A process for preparing a recording medium according to  claim 154 , wherein the organic thin film is formed according to the Langmuir-Blodgett's method.  
     
     
         156 . A process for preparing a recording medium according to  claim 154 , wherein the recording layer includes an organic thin film.  
     
     
         157 . A process for preparing a recording medium according to  claim 156 , wherein the organic thin film is formed according to the Langmuir-Blodgett's method.