Wafer having smooth surface

Abstract

A method for preparing a wafer having a smooth surface is disclosed. The present invention includes the step of preparing a wafer base and a first material on the wafer base. The wafer base and first material have a surface and a plurality of holes. The present invention includes the step of depositing a second material at an angle on the first material such that the second material is substantially on the surface. The present invention includes the step of exposing the first material and the second material to an oxidizing agent. The present includes the step of reacting a third material on the second surface to close the holes.

What is claimed is:  
     
         1 . A method for preparing a wafer surface, the method comprising the steps of: 
 preparing a wafer base and a first material on said wafer base having a surface and a plurality of holes;    depositing a second material at an angle on said first material such that said second material is substantially on said surface;    exposing said first material and said second material to an oxidizing agent and    reacting a third material on said second surface to close said holes.    
     
     
         2 . The method of    claim 1   , further comprising the step of: 
 oxidizing a portion of said first material, said portion located in said plurality of holes.    
     
     
         3 . The method of    claim 1   , wherein said depositing step includes depositing said second material at a non-perpendicular angle.  
     
     
         4 . The method of    claim 1   , wherein said reacting step includes growing said third material on said second material.  
     
     
         5 . The method of    claim 4   , wherein said growing step includes growing by an electro-chemical process.  
     
     
         6 . The method of    claim 1   , further comprising the step of: 
 polishing said wafer base.    
     
     
         7 . A wafer comprising: 
 a wafer base and a first material having a surface and a plurality of holes;    a second material on said first material, said second material substantially in contact with said plurality of smooth areas; and    a third material reacted on said second material, said third material covering said plurality of holes.    
     
     
         8 . The wafer of    claim 7   , wherein said first material is comprised of lead.  
     
     
         9 . The wafer of    claim 7   , wherein said wafer base is comprised of silicon.  
     
     
         10 . The wafer of    claim 7   , wherein said second material is comprised of silver.  
     
     
         11 . The wafer of    claim 7   , wherein said third material is comprised of copper.  
     
     
         12 . The wafer of    claim 7   , wherein said second material does not react materially with said first material.  
     
     
         13 . The wafer of    claim 7   , wherein said plurality of holes have a diameter of about 1 micrometer to about 10 micrometers.  
     
     
         14 . The wafer of    claim 7   , wherein said plurality of holes have a depth of about 1 micrometer to 10 micrometers.  
     
     
         15 . The wafer of    claim 7   , further comprising 
 a deposit angle, wherein said fist material is deposited on said upper at said deposited angle.    
     
     
         16 . The wafer of    claim 15   , wherein said deposit angle is non-perpendicular.  
     
     
         17 . The wafer of    claim 16   , wherein said deposit angle is  30  degrees.  
     
     
         18 . A wafer, made by the process of: 
 preparing a wafer base and a first material on said wafer base having a surface and a plurality of holes;    depositing a second material at an angle on said first material such that said second material is substantially on said surface;    exposing said first material and said second material to an oxidizing agent; and    reacting a third material on said second surface to close said holes.