Etching method

Abstract

The method deals with plasma-structuring by etching, in particular with the plasma-structuring of materials at high temperatures. The application of a chemical etching process at high temperatures is made possible by the prior deposition of a polyimide mask.

We claim:  
     
         1 . An improved plasma-etching process at temperatures above 100° C., which comprises applying a polyimide mask prior to etching a structure.  
     
     
         2 . The method according to    claim 1   , wherein the polyimide contains fluorine.  
     
     
         3 . The method according to    claim 1   , which comprises forming the polyimide on a wafer by cross-linking.  
     
     
         4 . A method for the plasma-etching of metals, which comprises applying a polyimide mask to a metal layer, and chemically etching the metal layer, aided by the mask, with a plasma etching process at temperatures between 300° C. and 500° C.  
     
     
         5 . The method according to    claim 4   , wherein the metal layer consists of a noble metal.  
     
     
         6 . The method according to    claim 4   , wherein the polyimide contains fluorine.  
     
     
         7 . The method according to    claim 4   , which comprises forming the polyimide on a wafer by cross-linking.