US2001051403A1PendingUtilityA1

Method and apparatus for deposition of porous silica dielectrics

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Priority: Apr 30, 1999Filed: May 23, 2001Published: Dec 13, 2001
Est. expiryApr 30, 2019(expired)· nominal 20-yr term from priority
Inventors:Gayle W. MillerGail D. Shelton
H10P 14/6922H10P 14/6686H10P 14/6342H10P 14/665H10P 14/6529
40
PatentIndex Score
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Claims

Abstract

A method and apparatus for forming a dielectric layer. A dielectric precursor solution is deposited onto a surface of a substrate. The substrate is spun to spread the dielectric precursor solution over the surface of the substrate. A catalyst is introduced through a filter, wherein the filter causes a substantially homogenous distribution of the catalyst within the substrate, wherein a dielectric layer forms containing pores and wherein a solvent is contained in the pores. The solution is dried to form the dielectric layer using a carrier gas after introducing the catalyst, wherein the carrier gas places a positive pressure within the pores while removing the solvent to form a low-k dielectric layer.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method for forming a dielectric layer comprising: 
 depositing a dielectric precursor solution onto a surface of a substrate;    spinning the substrate to spread the dielectric precursor solution over the surface of the substrate;    introducing a catalyst through a filter, wherein the filter causes a substantially homogenous distribution of the catalyst within the dielectric precursor solution, wherein a dielectric layer forms containing pores and wherein a solvent is contained in the pores; and    drying the dielectric layer using a carrier gas after introducing the catalyst, wherein the carrier gas places a positive pressure within the pores while removing the solvent to form a low-k dielectric layer.    
     
     
         2 . The method of    claim 1   , wherein the ratio of carrier gas includes a vapor and an inert gas and the ratio of the inert gas to vapor is changed to increase an amount of inert gas to maintain a constant capillary pressure within the pores.  
     
     
         3 . The method of    claim 1    further comprising: 
 annealing the substrate after drying the solution.  
 
     
     
         4 . The method of    claim 1   , wherein the catalyst is an acid catalyst.  
     
     
         5 . The method of    claim 4   , wherein the acid catalyst is chosen from a group of HCL and HNO 3 .  
     
     
         6 . The method of    claim 1   , wherein the catalyst is a base catalyst.  
     
     
         7 . The method of    claim 6   , wherein the base catalyst is ammonium fluoride.  
     
     
         8 . The method of    claim 1   , wherein the dielectric precursor solution is Si(OR) 4,  wherein R is a solvent.  
     
     
         9 . The method of    claim 8   , wherein R is selected from a group of ethanol and methanol.  
     
     
         10 . The method of    claim 1   , wherein the dielectric layer is an aerogel dielectric layer.  
     
     
         11 . The method of    claim 1   , wherein the catalyst is introduced through a filter made of a mesh vapor distribution unit.  
     
     
         12 . The method of    claim 1   , wherein the pores have a range in size from about 01. microms to about 1.0 microns.  
     
     
         13 . The method of    claim 1   , wherein the catalyst is an anhydrous HF.  
     
     
         14 . The method of    claim 1   , wherein the substrate is a semiconductor substrate.  
     
     
         15 . The method of    claim 1   , wherein the substrate is a silicon substrate.  
     
     
         16 . The method of    claim 1   , wherein the substrate is a germanium substrate.  
     
     
         17 . A method for forming a silicon dioxide layer in a single processing apparatus comprising: 
 depositing a silica precursor solution onto a surface of a substrate;    spinning the substrate to spread the solution over the surface of the substrate;    introducing a catalyst through a filter, wherein the filter causes a substantially homogenous distribution of the catalyst within the substrate, wherein a dielectric layer forms containing pores.    
     
     
         18 . The method of    claim 17   , wherein a solvent is contained in the pores and further comprising: 
 drying the silica precursor solution to form the silicon dioxide layer using a carrier gas after introducing the catalyst, wherein the carrier gas places a positive pressure within the pores while removing the solvent to form a low-k dielectric layer.    
     
     
         19 . The method of    claim 17   , wherein the catalyst is an acid catalyst.  
     
     
         20 . The method of    claim 19   , wherein the acid catalyst is chosen from a group of HCL and HNO 3 .  
     
     
         21 . The method of    claim 17   , wherein the catalyst is a base catalyst.  
     
     
         22 . The method of    claim 21   , wherein the base catalyst is ammonium fluoride.  
     
     
         23 . The method of    claim 17   , wherein the silica precursor is Si(OR) 4,  wherein R is a solvent.  
     
     
         24 . The method of    claim 23   , wherein R is selected from a group of ethanol and methanol.  
     
     
         25 . The method of    claim 17   , wherein the dielectric layer is an aerogel dielectric layer.  
     
     
         26 . An apparatus comprising: 
 a housing;    an opening in the housing configured to pass a substrate into the housing;    a chuck located within the housing, wherein the chuck is configured to hold the substrate for processing and wherein the substrate may be spun using the chuck;    an inlet within the housing, wherein the inlet is configured for connection to a source for a precursor silica solution and wherein the inlet is configured to deposit the precursor silica solution onto the substrate held by the chuck and wherein a film of the precursor solution may be formed on the substrate; and    a filter unit, wherein the filter unit is configured to receive a catalyst and introduce the catalyst onto the wafer in a uniform manner such that the catalyst becomes homogeneously diffused into the film.    
     
     
         27 . The apparatus of    claim 26   , wherein the substrate is a semiconductor wafer.  
     
     
         28 . The apparatus of    claim 26   , wherein the substrate is a substrate for an integrated circuit.  
     
     
         29 . The apparatus of    claim 26   , wherein the substrate is a substrate for a chemical sensor.

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