Method for improving thermal stability of fluorinated amorphous carbon low dielectric constant materials

Abstract

A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.

What is claimed is:  
     
         1 . A process for forming a thermally stable low-dielectric constant material, the process comprising: 
 preparing a gas mixture to form a fluorinated amorphous carbon (a-C:F) material; and    mixing said gas mixture with a boron-containing gas.    
     
     
         2 . The process of    claim 1    wherein mixing said gas mixture with said boron-containing gas includes forming a boron-doped-fluorinated-amorphous-carbon (a-C:B:F) material.  
     
     
         3 . The process of    claim 1    wherein said gas mixture comprises hydrocarbon, fluorocarbon, boron-containing gas, and an inert gas.  
     
     
         4 . The process of    claim 1    wherein said boron-containing gas comprises one of diborane (B 2 H 6 ) and boron trifluoride (BF 3 ).  
     
     
         5 . The process of    claim 1    wherein said boron-containing gas is mixed to said gas mixture after said a-C:F material is formed by chemical vapor deposition (CVD) techniques.  
     
     
         6 . The process of    claim 1    wherein said boron-containing gas is mixed to said gas mixture after said a-C:F material is formed by reactive sputtering techniques.  
     
     
         7 . The process of    claim 2    wherein said a-C:B:F material is formed by chemical vapor deposition techniques.  
     
     
         8 . The process of    claim 2    wherein said a-C:B:F material is formed by reactive sputtering techniques.  
     
     
         9 . The process of    claim 2   , wherein said a-C:B:F material has an atomic composition of 45% carbon, 40% fluorine, and 15% boron.  
     
     
         10 . A dielectric material comprising a-C:B:F material.  
     
     
         11 . The dielectric material of    claim 10   , said a-C:B:F material has an atomic composition of 45% carbon, 40% fluorine, and 15% boron.  
     
     
         12 . A process for providing an interconnect structure with low capacitance, the process comprising: 
 patterning at least two metal lines upon a substrate; and    forming an a-C:B:F material between said at least two metal lines.    
     
     
         13 . The process of    claim 12   , wherein said a-C:B:F material is formed by the process comprising: 
 preparing a gas mixture to form a fluorinated amorphous carbon (a-C:F) material; and    mixing said gas mixture with a boron-containing gas.    
     
     
         14 . The process of    claim 12    wherein said a-C:B:F material is formed by chemical vapor deposition techniques.  
     
     
         15 . The process of    claim 12   , wherein said a-C:B:F material has an atomic composition of 45% carbon, 40% fluorine, and 15% boron.  
     
     
         16 . A process for providing an interconnect structure with low capacitance, the process comprising: 
 forming an a-C:B:F material upon a substrate;    patterning at least two trenches in said a-C:B:F material; and    forming metal into said at least two trenches.    
     
     
         17 . The process of    claim 16   , wherein said a-C:B:F material is formed by the process comprising: 
 preparing a gas mixture to form a fluorinated amorphous carbon (a-C:F) material; and    mixing said gas mixture with a boron-containing gas.    
     
     
         18 . The process of    claim 16    wherein said a-C:B:F material is formed by chemical vapor deposition techniques.  
     
     
         19 . The process of    claim 16   , wherein said a-C:B:F material has an atomic composition of 45% carbon, 40% fluorine, and 15% boron.  
     
     
         20 . A process for providing an interconnect structure, the process comprising: 
 forming an a-C:B:F barrier layer on a low-k material of a substrate; and    forming a metal layer on said a-C:B:F barrier layer.    
     
     
         21 . The process as described in    claim 20    wherein said a-C:B:F barrier layer is formed, by way of chemical vapor deposition techniques.  
     
     
         22 . A process for providing an interconnect structure with the process comprising: 
 forming a metal layer upon a substrate;    patterning said metal layer;    forming an a-C:B:F barrier layer onto said metal layer; and,    forming a low-k material onto said a-C:B:F barrier layer.    
     
     
         23 . The process as described in    claim 22    wherein said a-C:B:F barrier layer is deposited by way of chemical vapor deposition techniques.  
     
     
         24 . A process for providing an interconnect structure with the process comprising: 
 forming a low-k material upon a substrate;    forming an a-C:B:F barrier layer onto said low-k material; and    forming a metal layer onto said a-C:B:F barrier layer.    
     
     
         25 . The process as described in    claim 24    wherein said a-C:B:F barrier layer is formed by way of chemical vapor deposition techniques.  
     
     
         26 . A process for patterning a low-k material by a hardmask, the process comprising: 
 forming said low-k material upon a substrate;    forming a-C:B:F upon said low-k material;    patterning said a-C:B:F to define an a-C:B:F pattern; and,    patterning a portion of said low-k material according to said a-C:B:F pattern.    
     
     
         27 . The process as described in    claim 26    wherein said portion of said material is patterned by way of hydrogen-based reactive ion etching.  
     
     
         28 . The process as described in    claim 26    wherein said a-C:B:F is formed by way of chemical vapor deposition techniques.  
     
     
         29 . A process for creating a pattern on an underlying material comprising: 
 forming said underlying material on a substrate;    depositing an anti-reflective coating (ARC), said anti-reflective coating being comprised of a-C:B:F;    forming a patterned photoresist layer on said anti-reflective coating; and,    forming a pattern in said anti-reflective coating and said underlying material according to said patterned photoresist layer.    
     
     
         30 . The process as described in    claim 29    wherein said a-C:B:F is formed by way of chemical vapor deposition techniques.