Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions

Abstract

The invention includes a method of forming an aluminum-comprising physical vapor deposition target. An aluminum-comprising mass is deformed by equal channel angular extrusion. The mass is at least 99.99% aluminum and further comprises less than or equal to about 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr. After the aluminum-comprising mass is deformed, the mass is shaped into at least a portion of a sputtering target. The invention also encompasses a physical vapor deposition target consisting essentially of aluminum and less than or equal to 1,000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Ti, Tm, V, W, Y, Yb, Zn and Zr. Additionally, the invention encompasses thin films.

1 . A method of forming an aluminum-comprising physical vapor deposition target, comprising: 
 deforming an aluminum-comprising mass by equal channel angular extrusion, wherein the mass is at least 99.99% aluminum and further comprises less than or equal to about 1000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Ti, Tm, V, W, Y, Yb, Zn and Zr;    after the deforming, shaping the mass into at least a portion of a physical vapor deposition target.    
     
     
         2 . The method of    claim 1    wherein the physical vapor deposition target is a monolithic target.  
     
     
         3 . The method of    claim 1    wherein the one or more dopant materials comprise materials selected from the group consisting of B, Ba, Be, Ca, Ce, Co, Cr, Dy, Er, Eu, Gd, Ge, Hf, Ho, La, Ni, Nd, Pd, Pm, Pr, Sb, Sc, Si, Sm, Sr, Tb, Te, Ti, Tm, Y, Yb and Zr.  
     
     
         4 . The method of    claim 1    wherein the one or more dopant materials comprise materials selected from the group consisting of Si, Sc, Ti and Hf.  
     
     
         5 . The method of    claim 1    wherein the mass consists of aluminum and from about 10 ppm to about 100 ppm of the one or more dopant elements.  
     
     
         6 . The method of    claim 1    wherein the mass consists of Al and from about 10 ppm to about 100 ppm of one or more of Si, Sc, Ti, and Hf.  
     
     
         7 . The method of    claim 1    wherein the mass consists of Al and from about 10 ppm to about 100 ppm of Hf.  
     
     
         8 . The method of    claim 1    wherein the mass consists of Al and from about 10 ppm to about 100 ppm of Ti.  
     
     
         9 . The method of    claim 1    wherein the mass consists of Al and from about 10 ppm to about 100 ppm of Sc.  
     
     
         10 . The method of    claim 1    wherein the mass consists of Al and from about 10 ppm to about 100 ppm of Si.  
     
     
         11 . A method of forming an aluminum-comprising physical vapor deposition target, comprising: 
 deforming an aluminum-comprising mass by equal channel angular extrusion; and    after the deforming, shaping the mass into at least a portion of a physical vapor deposition target, the physical vapor deposition target having an average grain size less than or equal to 45 microns.    
     
     
         12 . The method of    claim 11    wherein the mass is formed into an entirety of the physical vapor deposition target, and further comprising mounting the mass to a backing plate.  
     
     
         13 . The method of    claim 11    wherein the mass is at least 99.99% aluminum and consists of Al and less than 100 ppm of one or more of Si, Sc, Ti and Hf.  
     
     
         14 . The method of    claim 11    wherein the mass is at least 99.99% aluminum, and further comprises greater than 0 ppm and less than or equal to about 100 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Ti, Tm, V, W, Y, Yb, Zn and Zr.  
     
     
         15 . The method of    claim 11    wherein the mass consists essentially of aluminum.  
     
     
         16 . The method of    claim 11    wherein the mass consists essentially of aluminum, and less than or equal to about 100 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Ti, Tm, V, W, Y, Yb, Zn and Zr.  
     
     
         17 . The method of    claim 11    wherein the shaping comprises one or more of forging and rolling of the aluminum-comprising mass at a temperature of less than or equal to about 200° C.  
     
     
         18 . The method of    claim 11    wherein the deforming comprises at least three extruding steps, each of the at least three extruding steps comprising passing the mass through two intersecting passages having approximately equal cross-sections.  
     
     
         19 . The method of    claim 11    wherein the deforming comprises at least four extruding steps, each of the at least four extruding steps comprising passing the mass through two intersecting passages having approximately equal cross-sections.  
     
     
         20 . The method of    claim 11    wherein the deforming comprises at least six extruding steps, each of the at least six extruding steps comprising passing the mass through two intersecting passages having approximately equal cross-sections.  
     
     
         21 . A physical vapor deposition target consisting essentially of aluminum and less than or equal to 1000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr; the physical vapor deposition target having an average grain size of less than 100 microns.  
     
     
         22 . The physical vapor deposition target of    claim 21    having an average grain size of less than or equal to 45 microns.  
     
     
         23 . The physical vapor deposition target of    claim 21    consisting of Al and less than 100 ppm of one or more of Si, Sc, Ti; and Hf.  
     
     
         24 . The physical vapor deposition target of    claim 21    consisting of Al and from 10 ppm to 100 ppm of one or more of Si, Sc, Ti; and Hf.  
     
     
         25 . The physical vapor deposition target of    claim 21    consisting of Al and from 10 ppm to 100 ppm of Sc; the target having an average grain size of less than or equal to 45 microns.  
     
     
         26 . The physical vapor deposition target of    claim 21    consisting of Al and from 10 ppm to 100 ppm of Si; the target having an average grain size of less than or equal to 35 microns.  
     
     
         27 . The physical vapor deposition target of    claim 21    consisting of Al and from 10 ppm to 100 ppm of Ti.  
     
     
         28 . The physical vapor deposition target of    claim 21    consisting of Al and from 10 ppm to 100 ppm of Hf.  
     
     
         29 . A film sputtered from a target, the film consisting essentially of aluminum and less than or equal to 1000 ppm of one or more dopant materials comprising elements selected from the group consisting of Ac, Ag, As, B, Ba, Be, Bi, C, Ca, Cd, Ce, Co, Cr, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Ho, In, Ir, La, Lu, Mg, Mn, Mo, N, Nb, Nd, Ni, O, Os, P, Pb, Pd, Pm, Po, Pr, Pt, Pu, Ra, Rf, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Te, Ti, Tl, Tm, V, W, Y, Yb, Zn and Zr.  
     
     
         30 . The film of    claim 29    consisting of Al and less than 100 ppm of one or more of Si, Sc, Ti and Hf.  
     
     
         31 . The film of    claim 29    consisting of Al and from 10 ppm to 100 ppm of one or more of Si, Sc, Ti and Hf.