Semiconductor device and method of fabricating the same

Abstract

After a first metal film and a first interlayer insulating film are deposited successively on an insulating film on a semiconductor substrate, a via hole is formed in the first interlayer insulating film. A second metal film is grown in the via hole to form a via contact composed of the second metal film, while a recessed portion is formed over the via contact in the via hole. A cap layer composed of a material different from the material of the first metal film is formed in the recessed portion. Then, the first metal film is patterned by using a mask pattern for forming a lower interconnect and a cap layer as a mask, whereby a lower interconnect is formed.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a lower interconnect formed on a semiconductor substrate;    an interlayer insulating film deposited on the lower interconnect;    a via contact formed in the interlayer insulating film to be connected to the lower interconnect; and    an upper interconnect formed on the interlayer insulating film to be connected to the lower interconnect through the via contact,    the lower interconnect and the via contact being composed of the same material,    the via contact being connected directly to a top surface of the lower interconnect without extending off the top surface of the lower interconnect.