Lateral high-Q inductor for semiconductor devices

Abstract

An inductor for a semiconductor device comprises a plurality of loops connected in series and formed along a lateral axis of the semiconductor device. Each loop comprises a bottom leg, a top leg, and a pair of side legs. The bottom legs are parallel and extend along a first plane. The top legs are also parallel and extend along a second plane. The second plane is parallel to and separate from the first plane. The first and second planes are parallel to said lateral axis, and the side legs are perpendicular to the first and second planes. The top and side legs can be formed from copper. A barrier layer between the top legs and a substrate layer adjacent the top legs and between the side legs and the bottom legs and the substrate layer can also be provided. The barrier can be formed from tantalum.

What is claimed is:  
     
         1 . An inductor for a semiconductor device, comprising a plurality of loops connected in series, said plurality of loops formed along a lateral axis of the semiconductor device.  
     
     
         2 . The inductor according to    claim 1   , wherein each said loop comprises a bottom leg, a top leg, and a pair of side legs.  
     
     
         3 . The inductor according to    claim 2   , wherein between adjacent first and second loops, a second side leg of said first loop connects to a bottom leg of said second loop.  
     
     
         4 . The inductor according to    claim 2   , wherein said bottom legs are parallel along a common plane.  
     
     
         5 . The inductor according to    claim 2   , wherein said top legs are parallel along a first plane.  
     
     
         6 . The inductor according to    claim 5   , wherein said bottom legs are parallel along a second plane, said second plane parallel to and separate from said first plane.  
     
     
         7 . The inductor according to    claim 6   , wherein said first and second planes are parallel to said lateral axis.  
     
     
         8 . The inductor according to    claim 6   , wherein said side legs are perpendicular to said first and second planes.  
     
     
         9 . The inductor according to    claim 2   , further comprising a barrier layer, said barrier layer between said top legs and a substrate layer adjacent said top legs and between said side legs and said bottom legs and the substrate layer.  
     
     
         10 . The inductor according to    claim 9   , wherein said top legs and said side legs are formed from copper.  
     
     
         11 . The inductor according to    claim 10   , wherein said barrier layer is formed from tantalum nitride.  
     
     
         12 . An inductor for a semiconductor device, comprising a plurality of loops connected in series, said plurality of loops formed along a lateral axis of the semiconductor device, each said loop comprises: 
 a bottom leg,    a top leg, and    a pair of side legs,    said bottom legs parallel along a first plane, said top legs parallel along a second plane, said second plane parallel to and separate from said first plane, said first and second planes parallel to said lateral axis, and said side legs perpendicular to said first and second planes.