US2001033016A1PendingUtilityA1

Semiconductor device and method of manufacturing the same

Priority: Feb 14, 2000Filed: Feb 14, 2001Published: Oct 25, 2001
Est. expiryFeb 14, 2020(expired)· nominal 20-yr term from priority
H10W 72/07251H10W 72/01331H10W 72/20H10W 74/476H10W 74/47H10W 74/137
37
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Claims

Abstract

A semiconductor device is manufactured in a method including the steps of: abrasing a surface of a wafer opposite that thereof having a solder ball serving as an external connection electrode; and reinforcing the abrased surface with resin serving as a back-surface reinforcement member. More specifically, the resin is resin of rubber type, silicone type, epoxy type, polyimide type or urethane type. Preferably, previously grinding the surface to be abrased is previously ground to produce the device in a reduced process time. The structure can advantageously prevent a solder connection from breaking as an LSI chip fails to bend in response when the entire package receives force and thus bends.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A semiconductor device including a semiconductor substrate having a surface provided with an external connection electrode and a surface opposite that with said external connection electrode, abrased and reinforced with a back-surface reinforcement member.  
     
     
         2 . The semiconductor device of    claim 1   , wherein said back-surface reinforcement member is formed of resin.  
     
     
         3 . The semiconductor device of    claim 2   , wherein said resin is formed of a material having an elastic modulus of 1.5×10 6  N/m 2  to 5.0×10 6  N/m 2 .  
     
     
         4 . The semiconductor device of    claim 2   , wherein said resin is selected from the group consisting of resin of rubber type, resin of silicone type, resin of epoxy type, resin of polyimide type and resin of urethane type.  
     
     
         5 . A method of manufacturing a semiconductor device comprising the steps of: abrasing a surface of a semiconductor substrate opposite to a surface thereof having an external connection electrode; and applying resin on said surface abrased.  
     
     
         6 . The method of    claim 5   , further comprising the step of cutting said semiconductor substrate after the step of applying.  
     
     
         7 . The method of    claim 5   , further comprising the step of previously grinding said surface to be abrased.  
     
     
         8 . The method of    claim 6   , further comprising the step of previously grinding said surface to be abrased.  
     
     
         9 . The method of    claim 5   , wherein in the step of applying, said resin is printed.  
     
     
         10 . The method of    claim 6   , wherein in the step of applying, said resin is printed.  
     
     
         11 . The method of    claim 7   , wherein in the step of applying, said resin is printed.  
     
     
         12 . The method of    claim 8   , wherein in the step of applying, said resin is printed.  
     
     
         13 . The method of    claim 5   , wherein in the step of applying, said resin is applied by spin-coating.  
     
     
         14 . The method of    claim 6   , wherein in the step of applying, said resin is applied by spin-coating.  
     
     
         15 . The method of    claim 7   , wherein in the step of applying, said resin is applied by spin-coating.  
     
     
         16 . The method of    claim 8   , wherein in the step of applying, said resin is applied by spin-coating.

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