Methods for cleaning semiconductor surfaces

Abstract

The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or, ozone. The processes can use centrifugal processing and spraying actions.

1 . A method for cleaning semiconductor wafers having organic coating on the surface thereof comprising: 
 (a) contacting the surface of the wafer with an aqueous solution while contacting the wafer with ozone in an amount sufficient to create an oxidizing effect on the surface of the wafer to oxidize the organic coating; and    (b) removing the oxidized coating from the surface of the water.    
     
     
         2 . A method as defined in    claim 1    wherein the aqueous solution is water.  
     
     
         3 . A method as defined in    claim 1    wherein the aqueous solution contains an acid.  
     
     
         4 . A method as defined in    claim 1    wherein the aqueous solution is sprayed onto the surface of the wafer to form a thin aqueous film thereon.  
     
     
         5 . A method as defined in    claim 1    wherein the aqueous solution is adjusted to a temperature sufficient to effect oxidation on the surface of the wafer.  
     
     
         6 . A method as defined in    claim 1    wherein the ozone is admixed with a carrier gas.  
     
     
         7 . A method for cleaning a photo resist coating from a semiconductor wafer comprising: 
 (a) rotating the wafer in a processing chamber;    (b) spraying the wafer with an aqueous solution and simultaneously contacting the wafer with ozone in an amount sufficient to oxidize the photo resist on the surface of the wafer; and    (c) removing the oxidized photo resist from the surface of the wafer.    
     
     
         8 . A method as defined in    claim 7    wherein the aqueous solution is water.  
     
     
         9 . A method as defined in    claim 7    wherein the aqueous solution contains an acid.  
     
     
         10 . A method as defined in    claim 7    wherein the aqueous solution is sprayed onto the surface of the wafer to form a thin aqueous film thereon.  
     
     
         11 . A method as defined in    claim 7    wherein the aqueous solution is adjusted to a temperature sufficient to effect oxidation on the surface of the wafer.  
     
     
         12 . A method as defined in    claim 7    wherein the ozone is injected into the processing chamber.  
     
     
         13 . A method as defined in    claim 7    wherein the ozone is admixed with a carrier gas.