Polishing liquid for components, preferably wafers, process for producing polishing liquid and process for chemical mechanical polishing of components

Abstract

A polishing liquid for components, preferably wafers, a process for producing a polishing liquid and a process for chemical mechanical polishing of components are provided. The polishing liquid has a polishing base liquid and an oxidizing agent. The aim is to provide an economical polishing agent which is also simple to produce, which can be used as an alkaline or acidic polishing agent and with which metallic layers in particular can be polished. Ozone, which is used as an oxidizing agent, is a strong oxidizing agent having a redox potential that is sufficient for oxidizing or polishing the metals in an acidic or alkaline environment.

We claim:  
     
         1 . An oxidizing polishing liquid for polishing components, comprising a base polishing liquid and ozone.  
     
     
         2 . The polishing liquid according to    claim 1   , including a colloidal solution of small solid particles.  
     
     
         3 . The polishing liquid according to    claim 2   , wherein said solution is alkaline.  
     
     
         4 . The polishing liquid according to    claim 2   , wherein said solution is acidic.  
     
     
         5 . The polishing liquid according to    claim 1   , wherein said ozone is dissolved in water.  
     
     
         6 . The polishing liquid according to    claim 4   , including a redox potential of at least 2.0 V.  
     
     
         7 . The polishing liquid according to    claim 3   , including a redox potential of at least 1.2 V.  
     
     
         8 . The polishing liquid according to    claim 1   , wherein said ozone has a concentration range of from 0.2 g to 0.5 g per 500 ml of polishing liquid.  
     
     
         9 . The polishing liquid according to    claim 1   , wherein the component is a wafer.  
     
     
         10 . The polishing liquid according to    claim 1   , adapted for chemical mechanical polishing.  
     
     
         11 . A process for producing an oxidizing polishing liquid, which comprises the following steps: 
 a) providing a base polishing liquid having a colloidal solution of small solid particles;    b) providing gaseous ozone as an oxidizing agent; and    c) introducing the gaseous ozone into the base polishing liquid.    
     
     
         12 . The process according to    claim 11   , wherein the base liquid is alkaline.  
     
     
         13 . The process according to    claim 11   , wherein the base liquid is acidic.  
     
     
         14 . The process according to    claim 11   , which further comprises producing the ozone with an ozone generator.  
     
     
         15 . A process for polishing components with a polishing liquid, which comprises: 
 providing a polishing liquid having a base polishing liquid and ozone; and    chemical mechanical polishing of components with the polishing liquid.    
     
     
         16 . The process according to    claim 15   , wherein the components are wafers.  
     
     
         17 . The process according to    claim 15   , which further comprises polishing layers of a material selected from the group consisting of aluminum, tungsten, copper, titanium, titanium nitride, tantalum and tantalum nitride, with the polishing liquid.  
     
     
         18 . The process according to    claim 15   , which further comprises contact patterning of wafers with the polishing liquid.  
     
     
         19 . The process according to    claim 15   , which further comprises interconnect patterning of wafers with the polishing liquid.  
     
     
         20 . The process according to    claim 15   , which further comprises chemical mechanical polishing of at least one of metal layers, contact layers and adhesion layers of components with the polishing liquid.