Minimizing metal corrosion during post metal solvent clean

Abstract

The inventive method provides a wet cleaning of semiconductor devices on semiconductor wafers after photoresist is stripped. Semiconductor wafers are placed into a centrifuge carriage of a processing chamber. The centrifuge carriage rotates the semiconductor wafers. N-methylpyrrolidine heated to a temperature between 65° C. and 85° C. is sprayed onto the semiconductor wafers. Next N-methylpyrrolidine at room temperature is sprayed onto the semiconductor wafers. Finally, water at room temperature is sprayed onto the semiconductor wafers. The inventive method provides high throughput cleaning without undue corrosion or damage to metal layers.

We claim:  
     
         1 . A method of cleaning a semiconductor wafer, comprising the steps of: 
 placing the semiconductor wafer into a processing chamber;    spraying a first solvent, maintained at a temperature between 50° C. and 100° C., on to the semiconductor wafer;    discontinuing the spraying of the first solvent on to the semiconductor wafer;    spraying a second solvent, at a temperature between 20° C. and 40° C., on to the semiconductor wafer; and    discontinuing the spraying of the second solvent on to the semiconductor wafer.    
     
     
         2 . The method, as recited in    claim 1   , further comprising the step of: 
 spraying water, at a temperature between 20° C. and 40° C., on to the semiconductor wafer, wherein the step of spraying water is after the discontinuing of the spraying of the second solvent on the semiconductor wafer.    
     
     
         3 . The method, as recited in    claim 2   , wherein the first solvent and the second solvent are made of the same chemicals.  
     
     
         4 . The method, as recited in    claim 3   , further comprising the step of centrifuging the wafer during the steps of spraying the first solvent, spraying the second solvent, and spraying the water.  
     
     
         5 . The method, as recited in    claim 4   , wherein in the step of spraying the first solvent, the first solvent is at a temperature between 65° C. and 85° C.  
     
     
         6 . The method, as recited in    claim 5   , wherein in the step of spraying the second solvent, the second solvent is at a temperature between 25° C. and 30° C.  
     
     
         7 . The method, as recited in    claim 6   , wherein the first solvent and the second solvent are N-methylpyrrolidine.  
     
     
         8 . The method, as recited in    claim 7   , further comprising the steps of: 
 applying a layer on the semiconductor wafer, prior to placing the semiconductor wafer into the processing chamber;    placing a resist mask on the layer, prior to placing the semiconductor wafer into the processing chamber;    etching the layer, prior to placing the semiconductor wafer into the processing chamber; and    stripping the resist mask, prior to placing the semiconductor wafer into the processing chamber.    
     
     
         9 . The method, as recited in    claim 8   , wherein part of the layer is metallic.  
     
     
         10 . The method, as recited in    claim 8   , further comprising the step of stripping a sidewall polymer residue, prior to placing the semiconductor wafer into the processing chamber.  
     
     
         11 . The method, as recited in    claim 1   , wherein the first solvent and the second solvent are made of the same chemicals.  
     
     
         12 . The method, as recited in    claim 11   , wherein in the step of spraying the first solvent, the first solvent is at a temperature between 65° C. and 85° C.  
     
     
         13 . The method, as recited in    claim 12   , wherein in the step of spraying the second solvent, the second solvent is at a temperature between 25° C. and 30° C.  
     
     
         14 . The method, as recited in    claim 13   , wherein the first solvent and the second solvent are N-methylpyrrolidine.  
     
     
         15 . An apparatus for cleaning a semiconductor wafer, comprising: 
 a processing chamber;    a wafer centrifuge mounted in the processing chamber, with a means for retaining a semiconductor wafer;    a spray nozzle mounted within the processing chamber;    means for providing a first solvent, at a temperature between 50° C. and 100° C., to the spray nozzle;    means for providing a second solvent, at a temperature between 20° C. and 40° C., to the spray nozzle; and    means for providing water, at a temperature between 20° C. and 40° C., to the spray nozzle.