Method of manufacturing semiconductor device

Abstract

In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.

What is claimed is:  
     
         1 . A method of fabricating a semiconductor device, said method comprising the steps of: 
 forming an amorphous semiconductor film on an insulating surface;    introducing a metal material being capable of promoting crystallization of the amorphous semiconductor film;    performing a first heat treatment to crystallize the amorphous semiconductor film at a first temperature;    performing a second heat treatment at a second temperature higher than the first temperature in an atmosphere comprising argon,    wherein the second temperature is in a range of 450-1050° C.,    wherein the crystallized semiconductor film after the second heat treatment includes the metal material at a concentration in a range of 3×10 17  cm −3  or less.    
     
     
         2 . A method according to    claim 1   , 
 wherein the crystallized semiconductor film after the second heat treatment has a spin density in a range of 3×10 17  cm −3  or less.    
     
     
         3 . A method according to    claim 1   , 
 wherein the atmosphere in the second heat treatment further comprises a halogen element including at least a material selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2,  and Br 2 .    
     
     
         4 . A method according to    claim 1   , 
 wherein the metal material is one selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.    
     
     
         5 . A method according to    claim 1   , 
 wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and a thin film integrated circuit.    
     
     
         6 . A method of fabricating a semiconductor device, said method comprising the steps of: 
 forming an amorphous semiconductor film on an insulating surface;    introducing a metal material being capable of promoting crystallization of the amorphous semiconductor film;    performing a first heat treatment to crystallize the amorphous semiconductor film at a first temperature;    performing a second heat treatment at a second temperature higher than the first temperature in an atmosphere comprising argon;    irradiating the crystallized semiconductor film with a light after the second heat treatment,    wherein the second temperature is in a range of 450-1050° C.,    wherein the crystallized semiconductor film after the second heat treatment includes the metal material at a concentration in a range of 3×10 17  cm −3  or less.    
     
     
         7 . A method according to    claim 6   , 
 wherein the crystallized semiconductor film after the second heat treatment has a spin density in a range of 3×10 17  cm −3  or less.    
     
     
         8 . A method according to    claim 6   , 
 wherein the atmosphere in the second heat treatment further comprises a halogen element including at least a material selected from the group consisting of HCl, HF, HBr, Cl 2 , F 2 , and Br 2 .    
     
     
         9 . A method according to    claim 6   , 
 wherein the metal material is one selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.    
     
     
         10 . A method according to    claim 6   , 
 wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and a thin film integrated circuit.    
     
     
         11 . A method according to    claim 6   , wherein the light is a laser light.