Electron-beam excitation laser

Abstract

An electron-beam excitation laser has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure. An electron-beam excitation laser includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors and/or the light emitter in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants may be formed with a light-emitting material.

What is claimed is:  
     
         1 . An electron-beam excitation laser which has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure.  
     
     
         2 . An electron-beam excitation laser which includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals.  
     
     
         3 . The electron-beam excitation laser according to    claim 2   , wherein one of the dielectrics with different dielectic constants in the multidimensional photonic crystal is vacuum.  
     
     
         4 . The electron-beam excitation laser according to    claim 2   , wherein said multidimensional photonic crystal is formed by regularly and two-dimensionally arraying in a first dielectric cylindrical second dielectrics with a brachyaxis shorter than the wavelength of light emitted at intervals shorter than the wavelength of light emitted.  
     
     
         5 . The electron-beam excitation laser according to    claim 2   , wherein a part of said multidimensional photonic crystal has defects.  
     
     
         6 . The electron-beam excitation laser according to    claim 5   , wherein said defects are dielectrics which differ in size from other dielectrics.  
     
     
         7 . The electron-beam excitation laser according to    claim 2   , wherein said multidimensional photonic crystal, which is formed by anodizing aluminum, has such an anodized alumina nanohole structure that cylindrical nanoholes are regularly and two-dimensionally arrayed in an alumina layer.  
     
     
         8 . An electron-beam excitation laser which includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the light emitter in the laser structure is formed with a multidimensional photonic crystal in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants is formed with a light-emitting material.  
     
     
         9 . The electron-beam excitation laser according to    claim 8   , wherein said multidimensional photonic crystal is formed by regularly and two-dimensionally arraying in a first dielectric cylindrical second dielectrics with a brachyaxis shorter than the wavelength of light emitted at intervals shorter than the wavelength of light emitted.  
     
     
         10 . The electron-beam excitation laser according to    claim 9   , wherein said second dielectrics are formed with a light-emitting material.  
     
     
         11 . The electron-beam excitation laser according to    claim 10   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         12 . The electron-beam excitation laser according to    claim 9   , wherein said first dielectric is made of a light-emitting material, and said second dielectrics arrayed are voids.  
     
     
         13 . The electron-beam excitation laser according to    claim 12   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         14 . The electron-beam excitation laser according to    claim 8   , wherein a part of the multidimensional photonic crystal has defects.  
     
     
         15 . The electron-beam excitation laser according to    claim 14   , wherein said defects are dielectrics which differ in size from other dielectrics.  
     
     
         16 . The electron-beam excitation laser according to    claim 8   , wherein said multidimensional photonic crystal, which is formed by anodizing aluminum, has such an anodized alumina nanohole structure that cylindrical nanoholes are regularly and two-dimensionally arrayed in an alumina layer.  
     
     
         17 . The electron-beam excitation laser according to    claim 8   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         18 . An electron-beam excitation laser which includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the light emitter and reflectors in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants in the multidimensional photonic crystal forming the light emitter is formed with a light-emitting material.  
     
     
         19 . The electron-beam excitation laser according to    claim 18   , wherein one of the dielectrics with different dielectric constants forming said light reflector in the multidimensional photonic crystal is vacuum.  
     
     
         20 . The electron-beam excitation laser according to    claim 18   , wherein said multidimensional photonic crystal is formed by regularly and two-dimensionally arraying in a first dielectric cylindrical second dielectrics with a brachyaxis shorter than the wavelength of light emitted at intervals shorter than the wavelength of light emitted.  
     
     
         21 . The electron-beam excitation laser according to    claim 20   , wherein said second dielectrics in the multidimensional photonic crystal forming the light emitter is made of a light-emitting material.  
     
     
         22 . The electron-beam excitation laser according to    claim 21   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         23 . The electron-beam excitation laser according to    claim 20   , wherein said first dielectric in the multidimensional photonic crystal forming the light emitter is made of a light-emitting material, and said second dielectrics arrayed are voids.  
     
     
         24 . The electron-beam excitation laser according to    claim 23   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         25 . The electron-beam excitation laser according to    claim 18   , wherein a part of the multidimensional photonic crystal has defects.  
     
     
         26 . The electron-beam excitation laser according to    claim 25   , wherein said defects are dielectrics which differ in size from other dielectrics.  
     
     
         27 . The electron-beam excitation laser according to    claim 18   , wherein said multidimensional photonic crystal, which is formed by anodizing aluminum, has such an anodized alumina nanohole structure that cylindrical nanoholes are regularly and two-dimensionally arrayed in an alumina layer.  
     
     
         28 . The electron-beam excitation laser according to    claim 18   , wherein said second dielectrics in the multidimensional photonic crystal forming the light emitter is made of a light-emitting material.  
     
     
         29 . The electron-beam excitation laser according to    claim 18   , wherein said first dielectric in the multidimensional photonic crystal forming the light emitter is made of a light-emitting material, and said second dielectrics arrayed are voids.  
     
     
         30 . The electron-beam excitation laser according to    claim 18   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         31 . The electron-beam excitation laser according to    claim 28   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.  
     
     
         32 . The electron-beam excitation laser according to    claim 29   , wherein said light-emitting material is made of a II-VI semiconductor or zinc oxide.