Methods for cleaning semiconductor surfaces

Abstract

The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

1 . A method for cleaning semiconductor wafers comprising: 
 (a) providing a wafer in a processing chamber;    (b) contacting the wafer with an aqueous solution and simultaneously contacting the wafer with ozone in an amount sufficient to create an oxidizing effect on the surface of the wafer to oxidize contaminants thereon; and    (c) rinsing the surface of the wafer to remove oxidized contaminants from the surface thereof.    
     
     
         2 . A method as defined in    claim 1    wherein the aqueous solution is water.  
     
     
         3 . A method as defined in    claim 1    wherein the aqueous solution contains an acid.  
     
     
         4 . A method as defined in    claim 1    wherein the aqueous solution is sprayed onto the surface of the wafer to form a thin aqueous film thereon.  
     
     
         5 . A method as defined in    claim 1    wherein the aqueous solution is adjusted to a temperature sufficient to effect oxidation on the surface of the wafer.  
     
     
         6 . A method as defined in    claim 5    wherein the temperature of the solution is less than 200° C.  
     
     
         7 . A method as defined in    claim 1    wherein the ozone is injected into the processing chamber.  
     
     
         8 . A method as defined in    claim 1    wherein the ozone is admixed with a carrier gas.  
     
     
         9 . A method as defined in    claim 8    wherein the carrier gas is selected from the group consisting of oxygen, nitrogen, air and inert gas.  
     
     
         10 . A method for cleaning semiconductor wafers comprising: 
 (a) spraying onto a wafer an aqueous solution while simultaneously contacting the wafer with ozone to effect oxidation on the surface of the wafer; and    (b) rinsing the surface of the wafer.    
     
     
         11 . A method as defined in    claim 10    wherein the aqueous solution is water.  
     
     
         12 . A method as defined in    claim 10    wherein the aqueous solution includes an acid.  
     
     
         13 . A method as defined in    claim 10    wherein the aqueous solution is sprayed onto the surface of the wafer to form a thin aqueous film thereon.  
     
     
         14 . A method as defined in    claim 10    wherein the ozone is admixed with a carrier gas.  
     
     
         15 . A method for cleaning semiconductor wafers to remove organic materials from the surface there of comprising: 
 (a) spraying onto the surface of a wafer an aqueous solution and simultaneously contacting the wafer surface with ozone to effect oxidation of the organic materials on the surface of the wafer to oxidize said contaminants; and    (b) removing from the surface of the wafer oxidized contaminants.    
     
     
         16 . A method as defined in    claim 15    wherein the aqueous solution is water.  
     
     
         17 . A method as defined in    claim 15    wherein the aqueous solution contains an acid.  
     
     
         18 . A method as defined in    claim 15    wherein the aqueous solution is sprayed onto the surface of the wafer to form a thin aqueous film thereon.  
     
     
         19 . A method as defined in    claim 15    wherein the oxidized contaminants are removed from the surface of the wafer by rinsing the wafer surface.  
     
     
         20 . A method for cleaning a semiconductor article, comprising the steps of: 
 contacting the article with an oxidizing solution;    rinsing the article; and    exposing the article to a vapor comprising ozone.    
     
     
         21 . The method of    claim 20    with the liquid further including hydrogen flouride.