Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a lead frame, a dielectric tape layer, a plurality of conductive contacts and a semiconductor die. The lead frame is provided with a plurality of leads. The dielectric tape layer has a first adhesive surface adhered onto the leads, and a second adhesive surface opposite to the first adhesive surface. The dielectric tape layer is formed with a plurality of holes at positions registered with the leads for access thereto. Each of the holes is confined by a wall that cooperates with a registered one of the leads to form a contact receiving space. The conductive contacts are placed in the contact receiving spaces, respectively. The die has a die mounting surface adhered onto the second adhesive surface of the dielectric tape layer. The die mounting surface is provided with a plurality of contact pads that are bonded to the conductive contacts to establish electrical connection with the leads of the lead frame. A method for fabricating the semiconductor device is also disclosed.

I claim:  
     
         1 . A semiconductor device, comprising: 
 a lead frame provided with a plurality of leads;    a dielectric tape layer having a first adhesive surface adhered onto said leads, and a second adhesive surface opposite to said first adhesive surface, said dielectric tape layer being formed with a plurality of holes at positions registered with said leads for access thereto, each of said holes being confined by a wall that cooperates with a registered one of said leads to form a contact receiving space;    a plurality of conductive contacts placed in said contact receiving spaces, respectively; and    a semiconductor die having a die mounting surface adhered onto said second adhesive surface of said dielectric tape layer, said die mounting surface being provided with a plurality of contact pads that are bonded to said conductive contacts to establish electrical connection with said leads of said lead frame.    
     
     
         2 . The semiconductor device as claimed in    claim 1   , wherein said second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of said conductive contacts.  
     
     
         3 . The semiconductor device as claimed in    claim 1   , wherein each of said conductive contacts is a tin ball.  
     
     
         4 . The semiconductor device as claimed in    claim 1   , wherein each of said conductive contacts is formed from conductive paste.  
     
     
         5 . The semiconductor device as claimed in    claim 1   , wherein each of said conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with said contact pads.  
     
     
         6 . The semiconductor device as claimed in    claim 1   , further comprising a dielectric casing to enclose said semiconductor die and a portion of said lead frame.  
     
     
         7 . A semiconductor device, comprising: 
 a dielectric housing having a base plate and a surrounding wall extending upwardly from a periphery of said base plate, and cooperating with said base plate to confine a receiving space;    a lead frame disposed inside said receiving space, said lead frame being provided with a plurality of leads, each of said leads having a first end disposed in said housing and a second end extending outwardly of said receiving space through said surrounding wall;    a dielectric tape layer having a first adhesive surface adhered onto said leads in said receiving space of said housing, and a second adhesive surface opposite to said first adhesive surface, said dielectric tape layer being formed with a plurality of holes at positions registered with said leads for access thereto, each of said holes being confined by a wall that cooperates with a registered one of said leads to form a contact receiving space;    a plurality of conductive contacts placed in said contact receiving spaces, respectively;    a semiconductor die having a die mounting surface adhered onto said second adhesive surface of said dielectric tape layer, said die mounting surface being provided with a plurality of contact pads that are bonded to said conductive contacts to establish electrical connection with said leads of said lead frame; and    a dielectric cover provided on said housing to seal said receiving space and retain said semiconductor die inside said receiving space.    
     
     
         8 . The semiconductor device as claimed in    claim 7   , wherein said second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of said conductive contacts.  
     
     
         9 . The semiconductor device as claimed in    claim 7   , wherein said cover has a melting point lower than that of said housing.  
     
     
         10 . The semiconductor device as claimed in    claim 9   , wherein said cover is disposed at one side of said semiconductor die opposite to said die mounting surface.  
     
     
         11 . The semiconductor device as claimed in    claim 9   , wherein said cover fills said receiving space of said housing.  
     
     
         12 . The semiconductor device as claimed in    claim 9   , wherein said cover is made from epoxy resin.  
     
     
         13 . The semiconductor device as claimed in    claim 7   , wherein each of said conductive contacts is a tin ball.  
     
     
         14 . The semiconductor device as claimed in    claim 7   , wherein each of said conductive contacts is formed from conductive paste.  
     
     
         15 . The semiconductor device as claimed in    claim 7   , wherein each of said conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with said contact pads.  
     
     
         16 . A method for fabricating a semiconductor device, comprising: 
 adhering a first adhesive surface of a dielectric tape layer on a plurality of leads that are provided on a lead frame, the dielectric tape layer being formed with a plurality of holes at positions registered with the leads for access thereto, each of the holes being confined by a wall that cooperates with a registered one of the leads to form a contact receiving space;    placing a plurality of conductive contacts in the contact receiving spaces, respectively; and    adhering a die mounting surface of a semiconductor die onto a second adhesive surface of the dielectric tape layer opposite to the first adhesive surface, and bonding a plurality of contact pads that are provided on the die mounting surface of the semiconductor die to the conductive contacts to establish electrical connection with the leads of the lead frame.    
     
     
         17 . The method as claimed in    claim 16   , wherein the second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of the conductive contacts, and adhering of the semiconductor die onto the dielectric tape layer and bonding of the contact pads to the conductive contacts are performed simultaneously through a heat curing operation such that the die mounting surface is already adhered onto the second adhesive surface prior to melting of the conductive contacts.  
     
     
         18 . The method as claimed in    claim 16   , wherein adhering of the dielectric tape layer onto the leads is accomplished by heat curing of a heat-curable adhesive provided on the first adhesive surface.  
     
     
         19 . The method as claimed in    claim 16   , wherein each of the conductive contacts is a tin ball.  
     
     
         20 . The method as claimed in    claim 16   , wherein each of the conductive contacts is formed from conductive paste.  
     
     
         21 . The method as claimed in    claim 16   , wherein each of the conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with the contact pads.  
     
     
         22 . The method as claimed in    claim 16   , further comprising the step of forming a dielectric casing to enclose the semiconductor die and a portion of the lead frame.  
     
     
         23 . A method for fabricating a semiconductor device, comprising: 
 providing a dielectric housing having a base plate and a surrounding wall that extends upwardly from a periphery of the base plate, and that cooperates with the base plate to confine a receiving space;    placing a lead frame inside the receiving space of the housing such that each of a plurality of leads that are provided on the lead frame has a first end disposed in the housing and a second end extending outwardly of the receiving space through the surrounding wall;    adhering a first adhesive surface of a dielectric tape layer onto the leads in the receiving space of the housing, the dielectric tape layer being formed with a plurality of holes at positions registered with the leads for access thereto, each of the holes being confined by a wall that cooperates with a registered one of the leads to form a contact receiving space;    placing a plurality of conductive contacts in the contact receiving spaces, respectively;    adhering a die mounting surface of a semiconductor die onto the second adhesive surface of the dielectric tape layer opposite to the first adhesive surface, and bonding a plurality of contact pads that are provided on the die mounting surface to the conductive contacts to establish electrical connection with the leads of the lead frame; and    providing a dielectric cover on the housing to seal the receiving space and retain the semiconductor die inside the receiving space.    
     
     
         24 . The method as claimed in    claim 23   , wherein the second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of the conductive contacts, and adhering of the semiconductor die onto the dielectric tape layer and bonding of the contact pads to the conductive contacts are performed simultaneously through a heat curing operation such that the die mounting surface is already adhered onto the second adhesive surface prior to melting of the conductive contacts.  
     
     
         25 . The method as claimed in    claim 23   , wherein adhering of the dielectric tape layer onto the leads is accomplished by heat curing of a heat-curable adhesive provided on the first adhesive surface.  
     
     
         26 . The method as claimed in    claim 23   , wherein each of the conductive contacts is a tin ball.  
     
     
         27 . The method as claimed in    claim 23   , wherein each of the conductive contacts is formed from conductive paste.  
     
     
         28 . The method as claimed in    claim 23   , wherein each of the conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with the contact pads.  
     
     
         29 . The method as claimed in    claim 23   , wherein the cover has a melting point lower than that of the housing.  
     
     
         30 . The method as claimed in    claim 29   , wherein the cover is disposed at one side of the semiconductor die opposite to the die mounting surface.  
     
     
         31 . The method as claimed in    claim 29   , wherein the cover fills the receiving space of the housing.  
     
     
         32 . The method as claimed in    claim 29   , wherein the cover is made from epoxy resin.