Electrically insulating resin composition and method for forming thin film therefrom

Abstract

An electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

We claim:  
     
         1 . An electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent.  
     
     
         2 . The electrically insulating thin-film-forming resin composition of    claim 1   , where component (A) is a hydrogen silsesquioxane resin.  
     
     
         3 . The electrically insulating thin-film-forming resin composition of    claim 1   , where the groups in component B able to react with silicon atom-bonded hydrogen atoms are aliphatic unsaturated hydrocarbon groups.  
     
     
         4 . The electrically insulating thin-film-forming resin composition of    claim 1    further comprising (D) a catalyst as a crosslinking accelerator.  
     
     
         5 . The electrically insulating thin-film-forming resin composition of    claim 4   , where the catalyst is a platinum-based catalyst.  
     
     
         6 . The electrically insulating thin-film-forming resin composition of    claim 1   , comprising a least an equivalent amount of silicon atom-bonded hydrogen atoms in component (A) with respect to the groups able to react with silicon atom-bonded hydrogen atoms in component (B).  
     
     
         7 . The electrically insulating thin-film-forming resin composition of    claim 1   , comprising at least five equivalents of silicon atom-bonded hydrogen atoms in component (A) with respect to the groups able to react with silicon atom-bonded hydrogen atoms in component (B).  
     
     
         8 . The electrically insulating thin-film-forming resin composition of    claim 1   , where component (B) is selected from the group consisting of 1,3-dihexenyl-1,1,3,3-tetramethyldisiloxane and 1-octadecene.  
     
     
         8 . The electrically insulating thin-film-forming resin composition of    claim 1   , where the solvent is selected from the group consisting of methyl isobutyl ketone and siloxane.  
     
     
         10 . A method for forming an electrically insulating thin film comprising coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition comprising (A) an inorganic or organic electrically insulating resin having silicon atom-bonded hydrogen atoms, (B) a compound having groups able to react with the silicon atom-bonded hydrogen atoms in component (A) and having a boiling point under atmospheric pressure of at least 250° C., and (C) a solvent; evaporating all or part of the solvent, and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.  
     
     
         11 . A method for forming an electrically insulating thin film according to    claim 10    where component (A) is a hydrogen silsesquioxane resin and the groups in component (B) able to react with silicon atom-bonded hydrogen atoms are aliphatic unsaturated hydrocarbon groups.  
     
     
         12 . A method for forming an electrically insulating thin film according to    claim 11    further comprising (D) a platinum-based catalyst.