Method of fabricating a group III-V semiconductor light emitting device with reduced piezoelectric fields and increased efficiency

Abstract

An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.

What is claimed is:  
     
         1 . In an optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer, said strained quantum well layer having a piezoelectric field therein having a field strength that depends on the orientation of said strained quantum well layer when said quantum layer is grown, the improvement comprising growing said strained quantum well layer with an orientation at which said piezoelectric field is less than the maximum value of said piezoelectric field strength as a function of said orientation.  
     
     
         2 . The optical semiconductor device of    claim 1    wherein said GaN-based semiconductor layers have a wurtzite crystal structure and wherein said growth orientation of said strained quantum well layer is tilted at least 1° from the {0001} direction of said wurtzite crystal structure.  
     
     
         3 . The optical semiconductor device of    claim 2    wherein at least one other layer of said GaN-based semiconductor has a growth orientation in the {0001} direction.  
     
     
         4 . The optical semiconductor device of    claim 2    wherein said strained quantum well layer is tilted at 40°, 90°, or 140° from said {0001} direction.  
     
     
         5 . The optical semiconductor device of    claim 1    wherein said GaN-based semiconductor layers have a zincblende crystal structure and wherein said growth orientation of said strained quantum well layer is tilted at least 1° from the {111} direction of said zincblende crystal structure.  
     
     
         6 . The optical semiconductor device of    claim 5    wherein at least one other layer of said GaN-based semiconductor has a growth orientation in the {111} direction.  
     
     
         7 . A method for fabricating a GaN-based optical semiconductor device, said method comprising the steps of: growing a first semiconductor layer on a substrate, said first semiconductor layer being grown with a first facet orientation; altering the surface of said first semiconductor layer that is not in contact with said substrate such that said altered surface provides a growth orientation having a second facet orientation for a subsequent semiconductor layer grown thereon, said second facet orientation differing from said first facet orientation; and growing a strained quantum well layer on said altered surface.  
     
     
         8 . The method of    claim 7    wherein said step of altering said surface of said first semiconductor layer comprises selectively etching said first semiconductor layer or selective diffusion of said first semiconductor layer.  
     
     
         9 . The method of    claim 7    further comprising the step of growing a second semiconductor layer on said strained quantum well layer, said second semiconductor layer being grown with a facet orientation equal to said first facet orientation.