US2001008137A1PendingUtilityA1
Method of and apparatus for washing photomask and washing solution for photomask
Est. expiryMay 20, 2019(expired)· nominal 20-yr term from priority
Y10S134/902G03F 1/82G03F 1/32B08B 3/08
32
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Claims
Abstract
Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H 2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of washing a photomask comprising first to third steps of:
removing organic matter and metal impurities present on the surface of a photomask; removing foreign matter adhering to said surface of said photomask with H 2 gas dissolved water; and drying said photomask.
2 . The method of washing a photomask in accordance with claim 1 , wherein said H 2 gas dissolved water is alkalized.
3 . The method of washing a photomask in accordance with claim 2 , wherein said H 2 gas dissolved water is alkalized with ammonia.
4 . The method of washing a photomask in accordance with claim 2 , wherein said H 2 gas dissolved water is alkalized with KOH.
5 . The method of washing a photomask in accordance with claim 1 , also employing ultrasonics waves in said second step.
6 . The method of washing a photomask in accordance with claim 5 , also employing ultrasonics waves in said first step of claim 1 .
7 . The method of washing a photomask in accordance with claim 5 , wherein said foreign matter is particulate foreign matter.
8 . An apparatus for washing a photomask comprising:
an acid tank for removing organic matter and metal impurities present on the surface of a photomask with a first washing solution; a foreign matter removing tank for removing foreign matter adhering to said surface of said photomask with a second washing solution containing H 2 gas dissolved water; a drying tank for drying said photomask; first washing solution supply means supplying said first washing solution to said acid tank; first control means provided on said first washing solution supply means for controlling the concentration and the temperature of said first washing solution; second washing solution supply means supplying said second washing solution to said foreign matter removing tank; and second control means provided on said second washing solution supply means for controlling the concentration and the temperature of said second washing solution.
9 . The apparatus for washing a photomask in accordance with claim 8 , wherein said foreign matter removing tank is provided with ultrasonics waves application means for supplying ultrasonic waves into said foreign matter removing tank.
10 . The apparatus for washing a photomask in accordance with claim 8 , wherein said acid tank is provided with ultrasonics waves application means for supplying ultrasonic waves into said acid tank.
11 . The apparatus for washing a photomask in accordance with claim 8 , further comprising aqueous ammonia supply means provided in said foreign matter removing tank for supplying aqueous ammonia of prescribed concentration into said foreign matter removing tank.
12 . A washing solution for a photomask containing H 2 gas dissolved water.
13 . The washing solution for a photomask in accordance with claim 12 , wherein said H 2 gas dissolved water is alkalized.
14 . The washing solution for a photomask in accordance with claim 13 , wherein said H 2 gas dissolved water is alkalized with ammonia.
15 . The method of washing a photomask in accordance with claim 1 , wherein said photomask includes a halftone phase-shift photomask formed with an MoSiON film.Join the waitlist — get patent alerts
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