US2001005044A1PendingUtilityA1

Microelectronic assemblies having exposed conductive terminals and methods therefor

Priority: Apr 18, 1996Filed: Feb 16, 2001Published: Jun 28, 2001
Est. expiryApr 18, 2016(expired)· nominal 20-yr term from priority
Inventors:Joseph Fjelstad
H10W 74/00H10W 70/682H10W 74/142H10W 70/685H10W 72/0198H10W 72/075H10W 72/884H10W 72/5449H10W 72/07554H10W 72/547H10W 72/536H10W 72/5363H10W 90/756H10W 90/753H10W 72/5434H10W 72/5366H10W 72/932H10W 90/00H10W 99/00H10W 72/07511H10W 72/07504H10W 72/073H10W 90/736H10P 72/7438H10W 74/117H10W 74/114H10W 74/111H10W 74/014H10W 74/01H10W 70/042H10W 74/019
40
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A microelectronic assembly includes a microelectronic element having a front face including contacts, a back surface remote from the front face and edges extending therebetween. A mass of a dielectric material at least partially encapsulates the microelectronic element. The microelectronic assembly includes conductive units embedded in the mass of dielectric material at at least one edge of the microelectronic element, whereby at least some of the conductive units are exposed on oppositely-facing exterior surfaces of the mass of dielectric material. Conductive elements extend through the mass of dielectric material and electrically interconnect the contacts with the conductive units.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A microelectronic assembly comprising: 
 a microelectronic element having a front face including contacts, a back surface remote therefrom and edges extending therebetween;    a mass of a dielectric material at least partially encapsulating said microelectronic element;    conductive units embedded in said mass of dielectric material along at least one microelectronic element edge, at least some of said conductive units being exposed on oppositely-facing exterior surfaces of said mass of dielectric material; and    conductive elements extending through said mass of dielectric material and electrically interconnecting said contacts with said conductive units.    
     
     
         2 . The assembly as claimed in    claim 1   , wherein said mass of dielectric material has a top exterior surface juxtaposed with said front face of said microelectronic element and a bottom exterior surface juxtaposed with said back surface of said microelectronic element, at least some of said conductive units being exposed at both said top and bottom exterior surfaces of said dielectric material.  
     
     
         3 . The assembly as claimed in    claim 2   , wherein at least some of said conductive units include pad portions exposed at said bottom surface of said dielectric material and a protrusion extending from said pad portion exposed at said top surface of said dielectric material, wherein the cross sectional area of each said protrusion is smaller than the cross sectional area of the pad portion associated with such protrusion.  
     
     
         4 . The assembly as claimed in    claim 3   , wherein each of said protrusions extends from a portion of the associated pad portion furthest from said microelectronic element.  
     
     
         5 . A microelectronic device including first and second microelectronic assemblies as claimed in    claim 2   , wherein said assemblies are juxtaposed with each other such that exposed conductive units at said bottom exterior surface of said first assembly are electrically connected to said exposed conductive units at said top exterior surface of said second assembly.  
     
     
         6 . The assembly as claimed in    claim 5   , further comprising a substrate underlying said bottom exterior surface of said second assembly, wherein said exposed conductive units of said second assembly are connected to said substrate.  
     
     
         7 . The assembly as claimed in    claim 2   , wherein said conductive units protrude from said top exterior surface or said bottom exterior surface or both.  
     
     
         8 . The assembly as claimed in    claim 1   , wherein said back surface of said microelectronic element is exposed at an exterior surface of said assembly.  
     
     
         9 . The assembly as claimed in    claim 8   , further comprising thermally conductive adhesive attached to said back surface of said microelectronic element.  
     
     
         10 . The assembly as claimed in    claim 1   , wherein at least some of said conductive units have hollow centers.  
     
     
         11 . The assembly as claimed in    claim 10   , wherein said hollow centers extend through said at least some conductive units.  
     
     
         12 . The assembly as claimed in    claim 10   , further comprising a reflowable electrically conductive material disposed within the hollow centers of said conductive units.  
     
     
         13 . The assembly as claimed in    claim 12   , wherein said reflowable material is exposed at least one exterior surface of the assembly.  
     
     
         14 . A microelectronic assembly comprising: 
 a first microelectronic element having a front face including contacts and a back surface remote therefrom;    a second microelectronic element juxtaposed with said front face of said first microelectronic element and having terminals thereon;    a mass of a dielectric material at least partially encapsulating said first microelectronic element and fully encapsulating said second microelectronic element;    conductive units secured to said mass of dielectric material; and    conductive elements extending through said mass of dielectric material and electrically interconnecting said contacts and said terminals with said conductive units and/or with each other, wherein one or more of said conductive units are exposed at an exterior surface of said assembly.    
     
     
         15 . The assembly as claimed in    claim 14   , wherein said second microelectronic element includes a face surface having terminals and a back surface remote therefrom.  
     
     
         16 . The assembly as claimed in    claim 15   , wherein said back surface of said second microelectronic element faces said front surface of said first microelectronic element.  
     
     
         17 . The assembly as claimed in    claim 15   , wherein said back surface of said second microelectronic element is attached to said front surface of said first microelectronic element.  
     
     
         18 . The assembly as claimed in    claim 17   , wherein said conductive elements interconnect at least one of said terminals to at least one of said contacts.  
     
     
         19 . The assembly as claimed in    claim 17   , further comprising thermally conductive adhesive attached to said back surface of said first microelectronic element.  
     
     
         20 . The assembly as claimed in    claim 14   , wherein said back surface of said first microelectronic element is exposed at an exterior surface of said assembly.  
     
     
         21 . A method of making a semiconductor chip package, comprising the steps of: 
 providing a first sacrificial layer;    providing a dielectric base material on the first sacrificial layer;    providing an array of conductive pads on said dielectric base material such that a central region is defined by the pads;    attaching a back surface of a semiconductor chip to the first sacrificial layer within the central region so that a contact bearing surface of the chip faces away from the first sacrificial layer;    electrically connecting each contact to a respective pad;    providing a second sacrificial layer juxtaposed with the contact bearing surface of the chip;    depositing curable dielectric material such that the electrical connections and the chip are each encapsulated and curing the dielectric material;    forming apertures extending between the first and second sacrificial layers, at least some of said apertures extending through the cured dielectric material, through at least some of said conductive pads and through the dielectric base material;    depositing a conductive metal in said apertures so as to form conductive vias extending between the sacrificial layers, at least some of said conductive vias being electrically connected to at least some of said conductive pads; and    removing at least a portion of each said sacrificial layer.    
     
     
         22 . The method as claimed in    claim 21   , wherein said step of depositing a conductive metal is performed so as to form flange portions projecting outwardly from said conductive vias over the sacrificial layers.  
     
     
         23 . The method as claimed in    claim 22   , wherein said removing is performed so as to remove the entirety of said sacrificial layers other than portions of said layers covered by said flange portions.

Join the waitlist — get patent alerts

Track US2001005044A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.