Conductive thin film, a capacitor using the same and a method of manufacturing.

Abstract

It is an object of the present invention to provide a capacitor and a method of manufacturing the same having an electrode made of material(s) capable of carrying a fine work through etching while withstanding a high temperature thermal treatment for crystallizing dielectric materials such as ferroelectric materials and the like. The capacitor comprises a dielectric material composed by using at least a ferroelectric material or a high-dielectric material, and an electrode composed by using a material containing a noble metal, the electrode being formed on at least one side of the dielectric material, and the material of the electrode contains rhenium (Re). The capacitor is fabricated by patterning the material of the electrode contains rhenium (Re) using dry-etching method by introducing either of fluorine gas or chlorine gas.

What is claimed is:  
     
         1 . A capacitor comprising: 
 a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material, and    an electrode composed by using a material containing a noble metal, the electrode being formed on at least one side of the dielectric material,    wherein the material of the electrode contains rhenium (Re).    
     
     
         2 . The capacitor in accordance with    claim 1   , wherein the material containing a noble metal is composed by using one of platinum (Pt) and iridium (Ir).  
     
     
         3 . The capacitor in accordance with    claim 1   , wherein the material containing a noble metal contains one oxide of a metal selected from a group of osmium (Os), iridium (Ir), platinum (Pt), ruthenium (Ru) and rhodium (Rh).  
     
     
         4 . The capacitor in accordance with    claim 1   , wherein the electrode has a multi-layered structure made of a conductive material, 
 and wherein at least one of the layers forming the multi-layered structure contains the material containing a noble metal,    and wherein the one layer contains rhenium (Re).    
     
     
         5 . A semiconductor device including a capacitor structure at least comprising: 
 a semiconductor layer,    a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material, the dielectric material being located on the semiconductor layer, and    an electrode formed on the dielectric material,    wherein a material containing a noble metal adding rhenium (Re) is used for a material of the electrode.    
     
     
         6 . A method of manufacturing a capacitor comprising the steps of: 
 forming an electrode composed by using a material containing a noble metal at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material and    performing a patterning of the electrode by etching,    wherein rhenium (Re) is added to the material of the electrode,    and wherein the etching is in dry-etching by introducing fluorine gas.    
     
     
         7 . A method of manufacturing a capacitor comprising the steps of: 
 forming an electrode composed by using a material containing a noble metal at least one side of a dielectric material composed by using at least one of a ferroelectric material and a high-dielectric material, and    performing a patterning of the electrode by etching,    wherein rhenium (Re) is added to the material of the electrode,    and wherein the etching is in dry-etching by introducing chlorine gas.    
     
     
         8 . The method in accordance with    claim 7   , wherein the dry-etching is carried out while introducing a supply source for causing oxidation.  
     
     
         9 . A thin film having a certain conductivity, the thin film being composed by using a material containing a noble metal, wherein the material contains Re.  
     
     
         10 . The thin film in accordance with    claim 9   , wherein the material containing a noble metal is composed by using one of platinum (Pt) and iridium (Ir).  
     
     
         11 . The thin film in accordance with    claim 9   , wherein the material containing a noble metal contains one oxide of a metal selected from a group of osmium (Os), iridium (Ir), platinum (Pt), ruthenium (Ru) and rhodium (Rh).  
     
     
         12 . The thin film in accordance with    claim 9    wherein the thin film has a multi-layered structure made of a conductive material, 
 and wherein at least one of the layers forming the multi-layered structure contains the material containing a noble metal,  
 and wherein the one layer contains rhenium (Re).  
 
     
     
         13 . A semiconductor device comprising: 
 a semiconductor substrate, and    a conductive thin film formed one of directly and indirectly on the substrate,    wherein a material containing a noble metal adding rhenium (Re) is used for a material of the thin film.    
     
     
         14 . A method of manufacturing a semiconductor device comprising the steps of: 
 forming a conductive thin film on a semiconductor substrate one of directly and indirectly, and    performing a patterning of the conductive thin film by etching,    wherein a material of the thin film is made by using a material containing a noble metal adding rhenium (Re),    and wherein the etching is in dry-etching by introducing fluorine gas.    
     
     
         15 . A method of manufacturing a semiconductor device comprising the steps of: 
 forming a conductive thin film on a semiconductor substrate one of directly and indirectly, and    performing a patterning of the conductive thin film by etching,    wherein a material of the thin film is made by using a material containing a noble metal adding rhenium (Re),    and wherein the etching is in dry-etching by introducing chlorine gas.    
     
     
         16 . The method in accordance with    claim 15   , wherein the dry-etching is carried out while introducing a supply source for causing oxidation.